Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2013High power AlGaN/GaN HFETs for industrial, scientific and medical applications
Krausse, D.
Dissertation
2013High power AlGaN/GaN HFETs for industrial, scientific and medical applications
Krauße, D.
: Ambacher, O. (Ed.)
Dissertation
2012AlGaN/GaN power amplifiers for ISM applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Journal Article, Conference Paper
2011AlGaN/GaN power amplifiers for ISM frequency applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Conference Paper
2011Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O.
Conference Paper
2010AlGaN/GaN HEMTs for high voltage applications
Benkhelifa, F.; Krausse, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2005Investigation into efficiency enhancements in wide bandgap semiconductor circuits
Krausse, D.
Master Thesis
2005Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.
Conference Paper
2004Entwurf und Charakterisierung von monolithisch integrierten rauscharmen Vertatärkern auf der Basis von Galliumnitrid-Feldeffekttransistoren
Krausse, D.
Thesis
2004Robust GaN HEMT low-noise amplifier MMICs for X-band applications
Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper