Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Defects in oxidized p-type Si wafers observed by surface photovoltage spectroscopy
Kolkovsky, Vladimir
Journal Article
2019Electrical and structural properties of direct current magnetron sputtered amorphous TiAl thin films
Kolkovsky, V.; Schmidt, Jan-Uwe; Döring, S.
Journal Article
2019Platinum-Copper Defects in Silicon
Kolkovsky, V.; Kolkovsky, V.; Weber, J.
Journal Article
2019Separation of Individual Thermal Double-Donor Levels by Laplace Deep-Level Transient Spectroscopy
Gwozdz, K.; Kolkovsky, V.; Weber, J.
Journal Article
2018Carbon-hydrogen-related complexes in Si
Kolkovsky, V.; Stübner, Ronald; Gwozdz, K.; Weber, Jörg
Journal Article
2018Enhancement of vertical integration density by engineered BSOI wafers
Kaden, C.; Langa, S.; Ludewig, T.; Schönberger, A.; Herrmann, A.; Göbel, A.; Kolkovsky, V.; Jeroch, W.; Pufe, W.
Journal Article
2018Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique
Kolkovsky, Vladimir; Stübner, Ronald
Journal Article
2018Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
Kolkovsky, Vladimir; Scholz, Sebastian; Kolkovsky, Valery; Schmidt, Jan-Uwe; Heller, Rene
Journal Article
2017Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment
Stübner, Ronald; Kolkovsky, Vladimir; Weber, Jörg; Abrosimov, Nikolay V.
Journal Article
2017Carbon-related defects in microelectronics
Kolkovsky, V.; Stübner, R.; Weber, J.
Journal Article
2016Carbon-hydrogen complexes in n- and p-type SiGe-alloys studied by Laplace deep level transient spectroscopy
Stübner, Ronald; Kolkovsky, Vladimir; Weber, Jörg; Abrosimov, N.V.
Journal Article, Conference Paper
2016Enhanced dielectric properties of thin Ta2O5 films grown on 65 nm SiO2/Si
Kolkovsky, V.; Kurth, E.; Kunath, C.
Journal Article, Conference Paper
2016Identification of carbon-hydrogen complexes in n- and p-type silicon
Stübner, Ronald; Kolkovsky, Vladimir; Scheffler, Leopold; Weber, Jörg
Journal Article, Conference Paper
2016Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique
Kolkovsky, V.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.
Journal Article
2015Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties
Kolkovsky, V.; Lukat, K.; Kurth, E.; Kunath, C.
Journal Article
2013Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2
Kolkovsky, V.; Lukat, K.
Journal Article, Conference Paper