Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver
Journal Article
2018Halbleiterbauelement und Verfahren zu dessen Herstellung
Köhler, Klaus; Waltereit, Patrick
Patent
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2016Optimization of 2.5 μm VECSEL: Influence of the QW active region
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2015Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance
Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.
Journal Article
2015Feldeffekttransistor und Verfahren zu seiner Herstellung
Quay, Rüdiger; Köhler, Klaus
Patent
2015Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration
Weig, T.; Höck, H.; Holc, Katarzyna; Köhler, Klaus; Wagner, Joachim; Schwarz, U.T.
Journal Article
2015Microelectrospotting as a new method for electrosynthesis of surface-imprinted polymer microarrays for protein recognition
Bosserdt, Maria; Erdőssy, Júlia; Lautner, Gergely; Witt, Julia; Köhler, Katja; Gajovic-Eichelmann, Nenad; Yarman, Aysu; Wittstock, Gunther; Scheller, Frieder W.; Gyrcsányi, Róbert E.
Journal Article
2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.
Conference Paper
2015Verfahren zur Herstellung einer Schicht
Köhler, Klaus; Müller, Stefan; Breuer, Steffen
Patent
20142-µm high-brilliance micro-cavity VECSEL with >2W output power
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
Conference Paper
2014Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes
Weig, T.; Lükens, G.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Conference Paper
2014Excitons and exciton-phonon coupling in the optical response of GaN
Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.
Conference Paper, Journal Article
2014Gallium nitride laser diodes with integrated absorber: On the dynamics of self-pulsation
Holc, K.; Lükens, G; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Journal Article, Conference Paper
2014GaN-based micro-LED arrays on flexible substrates for optical cochlear implants
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U.T.
Journal Article
2014Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation
Albrecht, B.; Kopta, S.; John, O.; Rütters, Martin; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Conference Paper
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Conference Paper
2014Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Journal Article
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2014Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
Santi, C. de; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.; Meneghesso, G.; Zanoni, E.
Journal Article, Conference Paper
201330 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2013AlGaN ultraviolet A and ultraviolet C photodetectors with very high specific detectivity D*
Albrecht, B.; Kopta, S.; John, O.; Kirste, L.; Driad, R.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2013Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Journal Article
2013Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and Al(x)Ga(1-x)N
Köhler, K.; Gutt, R.; Wiegert, J.; Kirste, L.
Journal Article
2013Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
Binder, J.; Korona, K.P.; Wysmolek, A.; Kamiska, M.; Köhler, K.; Kirste, L.; Ambacher, O.; Zajac, M.; Dwilinski, R.
Journal Article
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2013Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias
Holc, K.; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Journal Article
2013Implantation studies on silicon-doped GaN
Simon, R.; Vianden, R.; Köhler, K.
Journal Article
2013Laser direct writing of GaN-based light-emitting diodes - the suitable laser source for mesa definition
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Picosecond pulse generation in monolithic GaN-based multi-section laser diodes
Holc, K.; Weig, T.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Conference Paper
2013Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Selective excitation of zone-folded phonon modes within one triplet in a semiconductor superlattice
Heinecke, D.C.; Kliebisch, O.; Flock, J.; Bruchhausen, A.; Köhler, K.; Dekorsy, T.
Journal Article
2012(Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T.
Conference Paper
2012Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012Electro-optically cavity dumped 2 µm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Free-electron laser spectroscopy of quantum well exciton dynamics
Schneider, H.; Bhattacharyya, J.; Zybell, S.; Winnerl, S.; Helm, M.; Andrews, A.M.; Strasser, G.; Köhler, K.
Conference Paper
2012GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission
Rattunde, Marcel; Kaspar, S.; Töpper, T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Conference Paper
2012GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.
Conference Paper
2012Heterodyne and spectroscopic room temperature terahertz imaging using InGaAs bow-tie diodes
Valusis, G.; Minkevicius, L.; Kasalynas, I.; Venckevicius, R.; Seliuta, D.; Tamosiunas, V.; Lisauskas, A.; Boppel, S.; Roskos, H.G.; Köhler, K.
Conference Paper
2012High-power 2.0 µm semiconductor disk laser-influence of lateral lasing
Töpper, T.; Rattunde, Marcel; Kaspar, S.; Moser, R.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Journal Article
2012Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012Labeling of anti-MUC-1 binding single chain fv fragments to surface modified upconversion nanoparticles for an initial in vivo molecular imaging proof of principle approach
Hischemöller, A.; Walter, C.; Weiler, V.; Hummel, H.; Thepen, T.; Huhn, M.; Barth, S.; Hoheisel, W.; Köhler, K.; Dimova-Landen, D.; Bremer, C.; Haase, M.; Waldeck, J.
Journal Article
2012Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Journal Article
2012Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Conference Paper
2012Photon stimulated ozone sensor based on indium oxide nanoparticles II: Ozone monitoring in humidity and water environments
Wang, C.Y.; Bagchi, S.; Bitterling, M.; Becker, R.W.; Köhler, K.; Cimalla, V.; Ambacher, O.; Chaumette, B.
Journal Article
2012Semiconductor disk laser at 2.05 µm wavelength with <100 kHz linewidth at 1 W output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Single-frequency kHz-linewidth 2-m GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Validation processes of protein biomarkers in serum - a cross platform comparison. Review
Köhler, K.; Seitz, H.
Journal Article
20112 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
20112µm semiconductor disk laser technology
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2011Absorption and emission properties of light emitting diode structures containing GaInN/GaN QWs
Binder, J.; Korona, K.P.; Borysiuk, J.; Wysmolek, A.; Baeumler, M.; Köhler, K.; Kirste, L.
Journal Article
2011Aluminum-germanium wafer bonding of (AlGaIn)N thin film light-emitting diodes
Gossler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Koehler, K.; Schwarz, U.T.; Wagner, J.
Abstract
2011Antikörper als Biomarker in der Diagnostik
Köhler, K.; Seitz, H.; Or-Guil, M.; Babel, N.
Journal Article
2011Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors
Gutt, R.; Himmerlich, M.; Fenske, M.; Müller, S.; Lim, T.; Kirste, L.; Waltereit, P.; Köhler, K.; Krischok, S.; Fladung, T.
Journal Article
2011Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Journal Article, Conference Paper
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Conference Paper
2011Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Journal Article
2011Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure
Lisauskas, A.; Reklaitis, A.; Venckevicius, R.; Kasalynas, I.; Valusis, G.; Grigaliunaite-Vonseviciene, G.; Maestre, H.; Schmidt, J.; Blank, V.; Thomson, M.D.; Roskos, H.G.; Köhler, K.
Journal Article
2011Growth mechanism and electronic properties of epitaxial In(2)O(3) films on sapphire
Wang, C.Y.; Kirste, L.; Morales, F.M.; Mánuel, J.M.; Röhlig, C.-C.; Köhler, K.; Cimalla, V.; García, R.; Ambacher, O.
Journal Article
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2011Narrow linewidth 2 µm GaSb-based semiconductor disk laser
Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Abstract
2011Nun prüfe, wer sich bindet: Charakterisierung von Interaktionen mittels kinetischer Messungen
Schumacher, S.; Köhler, K.; Dauber, M.; Jacob, A.; Seitz, H.
Journal Article
2011Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowires
Wang, C.Y.; Kinzer, M.; Youn, S.K.; Ramgir, N.; Kunzer, M.; Köhler, K.; Zacharias, M.; Cimalla, V.
Journal Article
2011Photoluminescence dynamics in GaAs/AlGaAs quantum wells under pulsed intersubband excitation
Zybell, S.; Schneider, H.; Winnerl, S.; Wagner, M.; Köhler, K.; Helm, M.
Journal Article
2011Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air
Wang, C.Y.; Becker, R.W.; Passow, T.; Pletschen, W.; Köhler, K.; Cimalla, V.; Ambacher, O.
Journal Article
2011Properties of the InGaAs bow-tie diode arrays for room temperature terahertz detection
Kasalynas, I.; Venckevicius, R.; Minkevicius, L.; Tamosiunas, V.; Seliuta, D.; Valusis, G.; Lisauskas, A.; Boppel, S.; Roskos, H.G.; Köhler, K.
Conference Paper
2011Reactor dependent starting transients of doping profiles in MOVPE grown GaN
Köhler, K.; Gutt, R.; Müller, S.; Wiegert, J.; Menner, H.; Kirste, L.; Protzmann, H.; Heuken, M.
Journal Article
2011Strong electric field driven carrier transport non-linearities in n-type GaAs/AlGaAs superlattices
Subacius, L.; Venckevicius, R.; Kasalynas, I.; Seliuta, D.; Valusis, G.; Schmidt, J.; Lisauskas, A.; Roskos, H.G.; Alekseev, K.; Köhler, K.
Journal Article, Conference Paper
2011Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
2011Terahertz heterodyne detection and imaging with the InGaAs bow-tie diode
Minkevicius, L.; Kasalynas, I.; Tamosiunas, V.; Seliuta, D.; Valusis, G.; Lisauskas, A.; Boppel, S.; Roskos, H.G.; Köhler, K.
Conference Paper
2011Terahertz heterodyne imaging with InGaAs-based bow-tie diodes
Minkevicius, L.; Tamosiunas, V.; Kasalynas, I.; Seliuta, D.; Valusis, G.; Boppel, S.; Roskos, H.G.; Köhler, K.
Journal Article
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Journal Article
2010GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010Imaging stand-off detection of explosives using tunable MIR quantum cascade lasers
Fuchs, F.; Hinkov, B.; Hugger, S.; Kaster, J.M.; Aidam, R.; Bronner, W.; Köhler, K.; Yang, Q.; Rademacher, S.; Degreif, K.; Schnürer, F.; Schweikert, W.
Conference Paper
2010Impact of Al content on transport properties of two-dimensional electron gas in GaN/Al(x)Ga(1-x)N/GaN heterostructures
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Köhler, K.; Müller, S.; Waltereit, P.; Ambacher, O.
Journal Article
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper, Journal Article
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2010Rate equations analysis of external-cavity quantum cascade lasers
Yang, Q.K.; Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.; Maulini, R.; Faist, J.
Journal Article
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2010Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives
Hinkov, B.; Fuchs, F.; Yang, Q.K.; Kaster, J.M.; Bronner, W.; Aidam, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2010Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Broad band tunable quantum cascade lasers for stand-off detection of explosives
Hinkov, B.; Fuchs, F.; Kaster, J.M.; Yang, Q.K.; Bronner, W.; Aidam, R.; Köhler, K.
Conference Paper
2009Determination of surface potential of GaN:Si
Köhler, K.; Maier, M.; Kirste, L.; Wiegert, J.; Menner, H.
Journal Article, Conference Paper
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Journal Article
2009H- and D-related mid-infrared absorption bands in Ga(1-y)In(y)As(1-x)N(x) epitaxial layers
Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.
Journal Article
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Journal Article
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Infrared semiconductor laser modules for DIRCM applications
Wagner, J.; Hugger, S.; Rösener, B.; Fuchs, F.; Rattunde, M.; Yang, Q.K.; Bronner, W.; Aidam, R.; Köhler, K.; Raab, M.; Romasew, E.; Tholl, H.D.
Conference Paper
2009Large-area terahertz emitters based on GaInAsN
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Conference Paper
2009A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.
Conference Paper
2009Observation of Fermi-edge and excitons and exciton-phonon complexes in the optical response of heavily doped n-type wurtzite GaN
Shokhovets, S.; Köhler, K.; Ambacher, O.; Gobsch, G.
Journal Article
2009Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers
Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.; Kirste, L.
Conference Paper
2009Optical stand-off detection of explosives and improvised explosive devices - OFDEX
Schnürer, F.; Schweikert, W.; Heil, M.; Bunte, G.; Krause, H.; Fuchs, F.; Kaster, J.; Hinkov, B.; Yang, Q.K.; Bronner, W.; Köhler, K.; Wagner, J.; Jander, P.; Fricke-Begemann, C.; Noll, R.; Hildenbrand, J.; Herbst, J.; Degreif, K.; Lambrecht, A.
Conference Paper
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Journal Article
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2009Quantum cascade detectors
Giorgetta, F.R.; Baumann, E.; Graf, M.; Yang, Q.K.; Manz, C.; Köhler, K.; Beere, H.E.; Ritchie, D.A.; Linfield, E.; Davies, A.G.; Fedoryshyn, Y.; Jäckel, H.; Fischer, M.; Faist, J.; Hofstetter, D.
Journal Article
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Journal Article, Conference Paper
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Conference Paper
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Conference Paper
2009Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Maier, M.; Köhler, K.; Kunzer, M.; Pletschen, W.; Wagner, J.
Journal Article
2009Reduction of the threading edge disclocation density in AlGaN epilayers by GaN nucleation
Gutt, R.; Kirste, L.; Wiegert, J.; Luick, D.; Köhler, K.
Conference Paper
2009The role of gated and ungated plasma in THz detection by field effect transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Conference Paper
2009Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging
Kasalynas, I.; Seliuta, D.; Tamosiunas, V.; Macutkevic, J.; Balakauskas, S.; Valusis, G.; Köhler, K.
Conference Paper
2009Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry
Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Köhler, K.; Valusis, G.
Journal Article
2009Time-resolved characterization of external-cavity quantum-cascade lasers
Hinkov, B.; Yang, Q.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2009Verfahren zur Bestimmung der Struktur eines Transistors
Koehler, K.; Mueller, S.; Waltereit, P.
Patent
2008(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.
Conference Paper
20085W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2008Band anticrossing in diluted AlxGa1-xAs1-yNy (x <= 0.37,y <= 0.04)
Procz, S.; Fiederle, M.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article
2008Coherent acoustic phonons in nanostructures
Dekorsky, T.; Taubert, R.; Hudert, F.; Bartels, A.; Habenicht, A.; Merkt, F.; Leiderer, P.; Köhler, K.; Schmitz, J.; Wagner, J.
Conference Paper
2008Current- and temperature-induced beam steering in 7.8-µm emitting quantum-cascade lasers
Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2008Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J.
Conference Paper, Journal Article
2008GaInAs/ AlAsSb quantum cascade lasers: A new approach towards 3-to-5 µm semiconductor lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Wagner, J.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Generation and detection of THz radiation with scalable antennas based on GaAs substrates with different carrier lifetimes
Winnerl, S.; Peter, F.; Nitsche, S.; Dreyhaupt, A.; Zimmermann, B.; Wagner, M.; Schneider, H.; Helm, M.; Köhler, K.
Journal Article
2008High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Conference Paper
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors
Hudert, F.; Bartels, A.; Dekorsky, T.; Köhler, K.
Journal Article
2008Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D.
Conference Paper
2008Leistungsstarke Emitter und einfach handhabbare Detektoren für die Terahertz-Time-Domain-Spektroskopie
Dreyhaupt, A.; Peter, F.; Winnerl, S.; Nitsche, S.; Wagner, M.; Schneider, H.; Helm, M.; Köhler, K.
Journal Article
2008Midinfrared quantum cascade detector with a spectrally broad response
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Journal Article
2008OFDEX-optial stand-off detection of explosives and improvised explosive devices
Bronner, W.; Fuchs, F.; Köhler, K.; Wagner, J.; Wild, C.; Bunte, G.; Heil, M.; Krause, H.; Schnürer, F.; Fricke-Begemann, C.; Jander, P.; Noll, R.; Bühler, C.; Herbst, J.; Hildenbrand, J.; Lambrecht, A.
Conference Paper
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Optically pumped GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
Köhler, K.; Manz, C.
Patent
2008The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry
Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Vaicikauskas, V.; Grigelionis, I.; Nedzinskas, R.; Köhler, K.; Valusis, G.
Conference Paper
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Conference Paper, Journal Article
2008The surface potential of GaN:Si
Köhler, K.; Wiegert, J.; Menner, H.P.; Maier, M.; Kirste, L.
Journal Article
2008Terahertz detection by the entire channel of high electron mobility transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Knap, W.; Grynberg, M.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Caban, P.; Strupinski, W.
Journal Article, Conference Paper
2008Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Journal Article
2008Terahertz emission from a large-area GaInAsN emitter
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Journal Article
2008THz detection by field-effect transistors in magnetic fields: Shallow water vs. deep water mechanism of electron plasma instability
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Journal Article
2008Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2007Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K.
Journal Article
2007Coherent acoustic phonons in phonon cavities investigated by asynchronous optical sampling
Hudert, F.; Bartels, A.; Janke, C.; Dekorsy, T.; Köhler, K.
Conference Paper, Journal Article
2007Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2007Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K.
Conference Paper, Journal Article
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Conference Paper
2007High peak-power (10.5 W) GaInAs/AlGaAsSb quantum-cascade lasers emitting at lamda ~ 3.6-3.8 µm
Yang, Q.K.; Manz, C.; Bronner, W.; Lehmann, N.; Fuchs, F.; Köhler, K.; Wagner, J.
Journal Article
2007High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D.
Conference Paper
2007High-speed asynchronous optical sampling for high-sensitivity detection of coherent phonons
Dekorsy, T.; Taubert, R.; Hudert, F.; Schrenk, G.; Bartels, A.; Cerna, R.; Kotaidis, A.; Plech, A.; Köhler, K.; Schmitz, J.; Wagner, J.
Conference Paper, Journal Article
2007Identification of point defects in Ga(Al)NAs alloys
Vorona, I.P.; Mchedlidze, T.; Dagnelund, D.; Buyanova, I.A.; Chen, W.M.; Köhler, K.
Conference Paper
2007InGaAs/AlAsSb quantum cascade detectors operating in the near infrared
Giorgetta, F.R.; Baumann, E.; Hofstetter, D.; Manz, C.; Yang, Q.K.; Köhler, K.; Graf, M.
Journal Article
2007Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J.
Journal Article
2007Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article
2007Large-area photoconductive terahertz detectors
Winnerl, S.; Peter, F.; Nitsche, S.; Dreyhaupt, A.; Drachenko, O.; Schneider, H.; Helm, M.; Köhler, K.
Conference Paper
2007Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes
Kunzer, M.; Kaufmann, U.; Köhler, K.; Leancu, C.-C.; Liu, S.; Wagner, J.
Journal Article
2007Remote sensing of explosives using mid-infrared quantum cascade lasers
Fuchs, F.; Wild, C.; Rahmouni, Y.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Conference Paper
2007Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Brauch, U.
Journal Article
2007Short-wavelength quantum cascade lasers
Yang, Quankui K.; Manz, Christian; Bronner, Wolfgang; Köhler, Klaus; Wagner, Joachim
Journal Article
2007Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2007Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2007The two-dimensional bigradient effect and its application for GHz-THz sensing
Seliuta, D.; Gruzinskis, V.; Tamosiunas, V.; Juozapavicius, A.; Kasalynas, I.; Asmontas, S.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Conference Paper
2006Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2006Bound-to-contiuum GaInAs-AlAsSb quantum cascade lasers with reduced electric injection power density
Yang, Q.K.; Manz, C.; Bronner, W.; Schäuble, K.; Mann, C.; Schwarz, K.; Köhler, K.; Wagner, J.
Journal Article
2006Coherent acoustic phonons in nanostructures investigated by asynchronous optical sampling
Dekorsy, T.; Hudert, F.; Cerna, R.; Schäfer, H.; Janke, C.; Bartels, A.; Köhler, K.; Braun, S.; Wiemer, M.; Mantl, S.
Conference Paper
2006Correlation of band formation and local vibrational mode structure in Ga(0.95)Al(0.05)As(1-x)N(x) with 0<= x <= 0.03
Güngerich, M.; Klar, P.J.; Heimbrodt, W.; Volz, K.; Köhler, K.; Wagner, J.; Polimeni, A.; Capizzi, M.; Alt, H.C.; Gomeniuk, Y.V.
Journal Article
2006Distributed-feedback GaInAs/AIAsSb quantum-cascade lasers operating at 300 K
Yang, Q.K.; Bronner, W.; Manz, C.; Raynor, B.; Menner, H.; Mann, C.; Köhler, K.; Wagner, J.
Journal Article
2006Femtosecond time-resolved optical pump-probe spectroscopy at kilohertz-scan-rates over nanosecond-time-delays without mechanical delay line
Bartels, A.; Hudert, F.; Janke, C.; Dekorsy, T.; Köhler, K.
Journal Article
2006GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Conference Paper
2006Generation of a DC Fiske current by coupling of Bloch and in-plane cyclotron oscillations in a semiconductor superlattice
Kosevich, Y.A.; Hummel, A.B.; Roskos, H.G.; Köhler, K.
Journal Article
2006High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Journal Article
2006High power GaSb-based optically pumped VECSEL at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.
Conference Paper
2006Influence of injector doping concentration on the performance of InP-based quantum cascade lasers
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2006Mg doping profile in III-N light emitting diodes in close proximity to the active region
Köhler, K.; Perona, A.; Maier, M.; Wiegert, J.; Kunzer, M.; Wagner, J.
Journal Article
2006New trends in terahertz electronics
Tamosiunas, V.; Seliuta, D.; Juozapavicius, A.; Sirmulis, E.; Valusis, G.; Fatimy, A. el; Meziani, Y.; Dyakonova, N.; Lusakowski, J.; Knap, W.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2006Optically detected magnetic resonance studies of point defects in Ga(Al)NAs
Vorona, I.P.; Mchedlidze, T.; Dagnelund, D.; Buyanova, I.A.; Chen, W.M.; Köhler, K.
Journal Article
2006Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Journal Article
2006Room-temperature short-wavelength (Lambda about 3.7-3.9 µm) GaInAs/AlAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2006Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature
Seliuta, D.; Kasalynas, I.; Tamosiunas, V.; Balakauskas, S.; Martunas, Z.; Asmontas, S.; Valusis, G.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Conference Paper, Journal Article
2006Spectral tuning and mode competition in quantum cascade lasers studied by time-resolved Fourier transform spectroscopy
Fuchs, F.; Kirn, B.; Mann, C.; Yang, Q.K.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Conference Paper
2006Time-resolved photocurrent spectroscopy of optically excited superlattices and the prospects for Bloch gain
Lisauskas, A.; Blöser, C.; Sachs, R.; Demarina, N.V.; Juozapavicius, A.; Valusis, G.; Köhler, K.; Roskos, H.G.
Conference Paper
2006Tunable, single-frequency, diode-pumped 2.3µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2006Ultrafast fiske effect in semiconductor superlattices
Kosevich, Y.A.; Hummel, A.B.; Roskos, H.G.; Köhler, K.
Journal Article
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Journal Article, Conference Paper
2005Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry
Baeumler, M.; Müller, S.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2005Broad band THz sensing by 2DEG bow-tie-type diodes
Valusis, G.; Seliuta, D.; Tamosiunas, V.; Sirmulis, E.; Balakauskas, S.; Gradauskas, J.; Suziedelis, A.; Asmontas, S.; Anbinderis, T.; Narkunas, A.; Papsujeva, I.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article, Conference Paper
2005Continuous-wave operation of GaInAs/AlGaAsSb quantum cascade lasers
Yang, Q.K.; Bronner, W.; Manz, C.; Moritz, R.; Mann, C.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
2005Control of the Mg doping profile in III-N light-emitting diodes and its effect on the elecroluminescence efficiency
Köhler, K.; Stephan, T.; Perona, A.; Wiegert, J.; Maier, M.; Kunzer, M.; Wagner, J.
Journal Article
2005Dynamics of the electric field in a GaAs/AlGaAs superlattice after femtosecond optical excitation: Application of time-resolved spectroscopic techniques
Lisauskas, A.; Blöser, C.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Journal Article, Conference Paper
2005Einmodige Quantenkaskadenlaser für Anwendungen in der Spurenanalytik
Mann, C.; Yang, Q.K.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2005Electro-optic investigation of the Coherent Hall Effect in semiconductor superlattices
Hummel, A.B.; Blöser, C.; Bauer, T.; Roskos, H.G.; Kosevich, Y.; Köhler, K.
Journal Article
2005The evolution of the electric field in an optically excited semiconductor superlattice
Lisauskas, A.; Blöser, C.; Hummel, A.B.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Journal Article
2005GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Kirste, L.; Köhler, K.; Wagner, J.
Journal Article
2005GaInAs/AlGaAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Kirste, L.; Köhler, K.; Wagner, J.
Journal Article
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Journal Article
2005High duty-cycle (>= 50%) operation of GaInAs/Al(Ga)AsSb quantum cascade lasers
Bronner, W.; Yang, Q.K.; Manz, C.; Kaufel, G.; Mann, C.; Köhler, K.; Wagner, J.
Conference Paper
2005High temperature (T >= 400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers
Yang, Q.K.; Mann, C.; Fuchs, F.; Köhler, K.; Bronner, W.
Conference Paper, Journal Article
2005High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D.
Journal Article
2005Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al(2)O(3) wafers
Scholz, F.; Brueckner, P.; Habel, F.; Peter, M.; Köhler, K.
Journal Article
2005In-Plane shaped GaAS/AlGaAS modulation-doped structures: Physics and applications for THz/SUBTHz sensing
Asmontas, S.; Juozapavicius, A.; Seliuta, D.; Sirmulis, E.; Tamosiunas, V.; Valusis, G.; Köhler, K.
Book Article
2005Quantenkaskadenlaser
Yang, Q.; Schneider, H.; Koehler, K.
Patent
2005THz/subTHz detection by asymmetrically-shaped bow-tie diodes containing 2DEG Layer
Seliuta, D.; Tamosiunas, V.; Sirmulis, E.; Asmontas, S.; Suziedelis, A.; Gradauskas, J.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Conference Paper
2005Time-resolved photocurrent spectroscopy of the evolution of the electric field in optically excited superlattices and the prospects for Bloch gain
Lisauskas, A.; Blöser, C.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Journal Article
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Journal Article
2004Coherent control of Bloch oscillations by means of optical pulse shaping
Fanciulli, R.; Weiner, A.M.; Dignam, M.; Meinhold, D.; Leo, K.; Köhler, K.
Conference Paper
2004Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers
Seliuta, D.; Sirmulis, E.; Tamosiunas, V.; Balakauskas, S.; Asmontas, S.; Suziedelis, A.; Gradauskas, J.; Valusis, G.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Conference Paper, Journal Article
2004The evolution of the electric field in an optically excited superlattice
Lisauskas, A.; Sachs, R.; Roskos, H.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Conference Paper
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Conference Paper
2004III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J.
Journal Article
2004Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes
Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.
Conference Paper
2004Intraband coherence of bloch oscillations after momentum scattering
Nüsse, S.; Wolter, F.; Haring Bolivar, P.; Köhler, K.; Hey, R.; Grahn, H.T.; Kurz, H.
Journal Article
2004Intraband dynamics of excitonic wave packets in a biased superlattice tested by THz emission
Rosam, B.; Meinhold, D.; Lyssenko, V.G.; Leo, K.; Yang, L.; Dignam, M.M.; Köhler, K.
Conference Paper
2004Intraband dynamics of excitonic wave packets in a biased superlattice tested by THz emission
Rosam, B.; Meinhold, D.; Lyssenko, V.G.; Leo, K.; Yang, L.; Dignam, M.M.; Köhler, K.
Conference Paper
2004Microwave sensor based on modulation-doped GaAs/AlGaAs structure
Juozapavicius, A.; Ardaravicius, L.; Suziedelis, A.; Kozic, A.; Gradauskas, J.; Kundrotas, J.; Seliuta, D.; Sirmulis, E.; Asmontas, S.; Valusis, G.; Roskos, H.G.; Köhler, K.
Journal Article, Conference Paper
2004Optical and acoustic intersubband plasmons
Rösch, M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Journal Article
2004Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.
Journal Article
2004Single-mode InP-based quantum cascade lasers for applications in trace-gas sensing
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Köhler, K.; Beyer, T.; Braun, M.; Lambrecht, A.
Conference Paper
2004Wave function reconstruction in a graded well-width semiconductor superlattice
Lyssenko, V.G.; Meinhold, D.; Rosam, B.; Leo, K.; Hvam, J.M.; Köhler, K.
Conference Paper
2004Wave-function reconstruction in a graded semiconductor superlattice
Lyssenko, V.G.; Hvam, J.M.; Meinhold, D.; Köhler, K.; Leo, K.
Journal Article
2003AlGaN/GaN HEMTs on silicon carbide substrates for microwave power operation
Lossy, R.; Chaturvedi, N.; Heymann, P.; Köhler, K.; Müller, S.; Würfl, J.
Conference Paper
2003Asymmetrically - shaped diodes for microwave - submillimeter sensing
Asmontas, S.; Ardavicius, L.; Balakauskas, S.; Gradauskas, J.; Kozic, A.; Kundrotas, J.; Köhler, K.; Roskos, H.G.; Sachs, R.; Suziedelis, A.; Seliuta, D.; Sirmulis, E.; Valusis, G.
Conference Paper
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2003The coherent Hall effect: Evolution of the Hall current of charge-carrier wavepackets in a semiconductor superlattice
Bauer, T.; Kolb, J.S.; Hummel, A.B.; Roskos, H.G.; Kosevich, Y.; Köhler, K.
Conference Paper
2003Continuous-wave operation of 5 µm quantum cascade lasers with high-reflection coated facets
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Köhler, K.
Journal Article
2003Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G.
Journal Article
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Conference Paper
2003Electroluminescence efficiency of InGaN light emitting diodes: Dependence on AlGaN:Mg electron blocking layer width and Mg doping profile
Stephan, T.; Köhler, K.; Kunzer, M.; Schlotter, P.; Wagner, J.
Journal Article
2003Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.
Conference Paper
2003The Hall current of coherent electron wavepackets
Bauer, T.; Hummel, A.B.; Kolb, J.S.; Roskos, H.G.; Kosevich, Y.; Köhler, K.
Conference Paper
2003Hybrid integrated optical receivers for high-speed data transmission
Leich, M.; Hurm, V.; Berger, J.; Dietrich, E.; Sohn, J.; Leuther, A.; Bronner, W.; Köhler, K.; Lösch, R.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2003Influence of a strong magnetic field on the Wannier-Stark states of an electrically biased GaAs/Al(x)Ga(1-x)As superlattice
Hummel, A.B.; Bauer, T.; Roskos, H.G.; Glutsch, S.; Köhler, K.
Journal Article
2003Lifetime of Wannier-Stark states in semiconductor superlattices under strong Zener tunneling to above-barrier bands
Rosam, B.; Leo, K.; Glück, M.; Keck, F.; Korsch, H.J.; Zimmer, F.; Köhler, K.
Journal Article
2003Mid-infrared quantum cascade lasers operation above room temperature
Yang, Q.K.; Mann, C.; Fuchs, F.; Kiefer, R.; Köhler, K.; Schneider, H.
Conference Paper
2003Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications
Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G.
Conference Paper
2003New results on high-field transport in semiconductor superlattices
Holfeld, C.P.; Rosam, B.; Meinhold, D.; Glutsch, S.; Schäfer, W.; Zhang, J.; Glück, M.; Korsch, H.J.; Rossi, F.; Köhler, K.; Leo, K.
Conference Paper
2003Peculiarities of excitonic photoluminescence of selectively-doped GaAs/Al(0.25)Ga(0.75)As structures
Kundrotas, J.; Asmontas, S.; Suziedelis, A.; Valusis, G.; Roskos, H.G.; Köhler, K.
Journal Article
2003Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2003Quantum cascade lasers for the mid-infrared spectral range: Devices and applications
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Kiefer, R.; Köhler, K.; Schneider, H.; Kormann, R.; Fischer, H.; Gensty, T.; Elsässer, W.
Conference Paper
2003Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells
Kundrotas, J.; Dargys, A.; Asmontas, S.; Valusis, G.; Köhler, K.
Conference Paper
2003SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier, M.; Serries, D.; Geppert, T.; Köhler, K.; Güllich, H.; Herres, N.
Journal Article
2003Terahertz optical properties of thin doped contact layers in GaAs device structures
Bauer, T.; Kolb, J.S.; Mohler, E.; Roskos, H.G.; Köhler, K.
Journal Article
2003THz dielectric response of a moving electron gas
Sachs, R.; Banyai, L.; Mohler, E.; Köhler, K.; Roskos, H.G.
Conference Paper
2002(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.
Conference Paper
200265 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Leich, M.; Hurm, V.; Sohn, J.; Feltgen, T.; Bronner, W.; Köhler, K.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Conference Paper
2002Coherent hall effect in a semiconductor superlattice
Bauer, T.; Kolb, J.; Hummel, A.B.; Roskos, H.G.; Kosevich, Y.; Köhler, K.
Journal Article
2002GHz-THz detection by asymmetrically-shaped GaAs: Bulk material versus nanostructures
Valusis, G.; Sachs, R.; Roskos, H.G.; Suziedelis, A.; Gradauskas, J.; Asmontas, S.; Sirmulis, E.; Köhler, K.
Journal Article
2002High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Ludwig, M.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2002High in content GaInAsN on InP: Composition dependent band gap energy and luminescence properties
Serries, D.; Geppert, T.; Ganser, P.; Köhler, K.; Wagner, J.
Conference Paper
2002Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
Stephan, T.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Obloh, H.; Müller, S.; Köhler, K.; Wagner, J.
Journal Article
2002Improvement of lambda ~ 5 µm quantum cascade lasers by blocking barriers in the active regions
Yang, Q.K.; Mann, C.; Fuchs, F.; Kiefer, R.; Köhler, K.; Rollbühler, N.; Schneider, H.; Wagner, J.
Journal Article
2002Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K.
Journal Article
2002Large area MSM photodiode array for 0.85µm wavelength 10 Gbit/s per channel parallel optical links
Hurm, V.; Bronner, W.; Benz, W.; Köhler, K.; Kropp, J.-R.; Lösch, R.; Ludwig, M.; Mann, G.; Mikulla, M.; Rosenzweig, J.; Schlechtweg, M.; Walther, M.; Weimann, G.
Journal Article
2002Mirrors and output couplers for THz and optical radiation
Hummel, A.B.; Bauer, T.; Kolb, J.S.; Mohler, E.; Roskos, H.G.; Pernisz, U.C.; Köhler, K.
Conference Paper
2002Polarization revival of a Bloch-oscillating wave packet in conjunction with resonant Zener tunneling
Meinhold, D.; Rosam, B.; Löser, F.; Lyssenko, V.G.; Rossi, F.; Zhang, J.-Z.; Köhler, K.; Leo, K.
Journal Article
2002Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2002Quantum cascade lasers with blocking barriers in the active regions
Mann, C.; Yang, Q.K.; Fuchs, F.; Kiefer, R.; Köhler, K.; Schneider, H.
Conference Paper
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Journal Article
2002Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Journal Article
2002Zener tunneling in superlattices in a magnetic field
Meinhold, D.; Leo, K.; Fromer, N.A.; Chemla, D.S.; Glutsch, S.; Bechstedt, F.; Köhler, K.
Journal Article
2001Alpha particle induced luminescence from multiple quantum wells
Kundrotas, J.; Dargys, A.; Granja, C.; Köhler, K.; Pospísil, S.; Remeikis, V.; Smith, K.M.
Conference Paper
2001Changes of MQW photoluminescence under alpha particle irradiation
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Granja, C.; Pospisil, S.; Köhler, K.
Journal Article
2001Chapter 3: Bloch oscillations in semiconductors: Principles and applications
Sudzius, M.; Lyssenko, V.; Löser, F.; Valusis, G.; Hasche, T.; Leo, K.; Dignam, M.; Köhler, K.
Book Article
2001Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; Köhler, K.
Journal Article
2001Fano resonances in semiconductor superlattices
Canzler, T.W.; Holfeld, C.P.; Löser, F.; Lyssenko, V.G.; Leo, K.; Whittaker, D.M.; Köhler, K.
Journal Article
2001Field-induced delocalization and Zener breakdown in semiconductor superlattices
Rosam, B.; Meinhold, D.; Löser, F.; Lyssenko, V.; Leo, K.; Glutsch, S.; Bechstedt, F.; Köhler, K.; Rossi, F.
Journal Article
2001Filling-factor-dependent electron correlations observed in cyclotron resonance
Manger, M.; Batke, E.; Hey, R.; Friedland, K.J.; Köhler, K.; Ganser, P.
Journal Article
2001High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2001Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al(0.35)Ga(0.65)As multiple quantum wells
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Köhler, K.; Leroy, C.
Journal Article
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Journal Article
2001Nonlinear transport in superlattices: Bloch oscillations and Zener breakdown
Löser, F.; Rosam, B.; Meinhold, D.; Lyssenko, V.G.; Sudzius, M.; Dignam, M.M.; Glutsch, S.; Bechstedt, F.; Rossi, F.; Köhler, K.; Leo, K.
Journal Article
2001Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
200040 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2000Complementary HFETs on GaAs with 0.2µm gate length
Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G.
Conference Paper
2000Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment
Dekorsy, T.; Bartels, A.; Kurz, H.; Ghosh, A.; Jönsson, L.; Wilkens, J.; Köhler, K.; Hey, R.; Ploog, K.
Journal Article
2000Coupled Bloch-phonon oscillations in semiconductor superlattices
Dekorsy, T.; Bartels, A.; Kurz, H.; Köhler, K.; Hey, R.; Ploog, K.
Journal Article
2000Direct observation of depolarization shift of the intersubband resonance
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Journal Article
2000Direct Observation of dynamical screening of the intersubband resonance
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Journal Article
2000Dynamics of Bloch oscillations under the influence of scattering and coherent plasmon coupling
Löser, F.; Kosevich, Y.; Köhler, K.; Leo, K.
Journal Article
2000Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Marsetz, W.; Schmidt, K.; Weimann, G.
Journal Article
2000Evolution of energy levels of a GaAs/AlGaAs superlattice under the influence of a strong magnetic field
Bauer, T.; Hummel, A.; Roskos, H.; Köhler, K.
Journal Article
2000Excitonic photoluminescence quenching by impact ionization of excitons and donors in GaAs/Al(0.35)Ga(0.65)As quantum wells with an in-plane electric field
Kundrotas, J.; Valusis, G.; Cesna, A.; Kundrotaite, A.; Dargys, A.; Suziedelis, A.; Gradauskas, J.; Asmontas, S.; Köhler, K.
Journal Article
2000Femtosecond pulse shaping for coherent carrier control
Heberle, A.; Baumberg, J.; Kuhn, T.; Köhler, K.
Journal Article
2000Field-induced delocalization and zener breakdown in semiconductor superlattices
Rosam, B.; Meinhold, D.; Löser, F.; Lyssenko, V.; Leo, K.; Glutsch, S.; Bechstedt, F.; Köhler, K.
Journal Article
2000GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry
Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.
Journal Article
2000GaN static induction transistor fabrication
Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.
Conference Paper
2000Generation and manipulation of Bloch wave packets
Löser, F.; Sudzius, M.; Lyssenko, V.; Kosevich, Y.; Dignam, M.; Köhler, K.; Leo, K.
Journal Article
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Conference Paper
2000Hole conductivity and compensation in epitaxial GaN:Mg layers
Kaufmann, U.; Schlotter, P.; Obloh, H.; Köhler, K.; Maier, M.
Journal Article
2000Influence of fano coupling on Wannier-Stark transitions in semiconductor superlattices
Canzler, T.W.; Holfeld, C.P.; Lyssenko, V.G.; Whittaker, D.M.; Köhler, K.; Leo, K.
Journal Article
2000Metamorphic Devices
Hülsmann, A.; Benkhelifa, F.; Bronner, W.; Chertouk, M.; Hurm, V.; Köhler, K.; Leuther, A.; Walther, M.; Weimann, G.
Conference Paper
2000Midbandgap electro-optic detection of Bloch oscillations
Först, M.; Segschneider, G.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
2000Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication
Hurm, V.; Leven, A.; Benz, W.; Berking, M.; Bronner, W.; Hülsmann, A.; Köhler, K.; Ludwig, M.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Sohn, J.; Walcher, H.; Weimann, G.
Conference Paper
2000Observation of coherent zone-folded acoustic phonons generated by raman scattering in a superlattice
Hawker, P.; Kent, A.; Challis, L.; Bartels, A.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000Photon drag investigations of current relaxation processes in a two-dimensional electron gas
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Journal Article
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Journal Article
2000Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Weimann, G.
Journal Article
2000Self-Induced Shapiro effect in semiconductor superlattices
Löser, F.; Dignam, M.; Kosevich, Y.; Köhler, K.; Leo, K.
Journal Article
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Conference Paper
2000Technology and performance of AlGaN/GaN HEMTs fabricated on 2-inch epitaxy for microwave power applications
Lossy, R.; Hilsenbeck, J.; Würfl, J.; Köhler, K.; Obloh, H.
Conference Paper
1999Bloch oscillations in semiconductor superlattices
Lyssenko, V.G.; Sudzius, M.; Löser, F.; Valusis, G.; Hasche, T.; Leo, K.; Dignam, M.M.; Köhler, K.
Book Article
1999Coherent acoustic phonons in GaAs/AlAs superlattices
Bartels, A.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
1999Coherent zone-folded longitudinal acoustic phonons in semiconductor superlattices. Excitation and detection
Bartels, A.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
1999Compositional dependence of the elastic constants and the lattice parameter of Al(x)Ga(1-x)As
Gehrsitz, S.; Sigg, H.; Herres, N.; Bachem, K.; Köhler, K.; Reinhart, F.K.
Journal Article
1999Coplanar W-band SPDT and SPtt resonated PIN diode switsches
Steinhagen, F.; Massler, H.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Conference Paper
1999Cyclotron mass of correlated two-dimensional electron GAS systems in GaAs
Manger, M.; Batke, E.; Köhler, K.; Ganser, P.
Conference Paper
1999Dynamics of Bloch Oscillations: Influence of Excitation Conditions
Valusis, G.; Lyssenko, V.; Sudzius, M.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.
Journal Article
1999Field-induced delocalization and zener breakdown in semiconductor superlattices
Rosam, B.; Löser, F.; Lyssenko, V.; Leo, K.; Glutsch, S.; Bechstedt, F.; Köhler, K.
Journal Article
1999Grating-coupler excited interface phonos in GaAs/AlAs superlattices
Milekhin, A.G.; Rösch, M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1999High frequency optical rectification in bulk GaAs and asymmetric AlGaAs/GaAs quantum wells
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Conference Paper
1999Influence of Electric Field on Photoluminescence Quenching in GaAs/AlGaAs Quantum Wells
Asmontas, S.; Cesna, A.; Gradauskas, J.; Köhler, K.; Kundrotaite, A.; Kundrotas, J.; Suziedelis, A.; Valusis, G.
Conference Paper
1999Infrared and Raman studies of confined and interface optical phonons in short-period GaAs/AlAs superlattices with a grating coupler
Milekhin, A.G.; Rösch, M.; Batke, E.; Zahn, D.R.T.; Köhler, K.; Ganser, P.; Preobrazhenskij, V.; Semyagin, B.
Journal Article
1999Millimeter-wave long-wavelength integrated optical receivers grown on GaAs
Baeyens, Y.; Leven, A.; Bronner, W.; Hurm, V.; Reuter, R.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
1999New Features of Spatial-Temporal dynamics of Bloch Oscillations
Dignam, M.; Köhler, K.; Leo, K.; Litvinenko, K.L.; Löser, F.; Lyssenko, V.; Sudzius, M.; Valusis, G.
Conference Paper
1999Nonharmonic Bloch Oscillations in GaAs/AlGaAs Superlattices
Litvinenko, K.L.; Köhler, K.; Leo, K.; Löser, F.; Lyssenko, V.
Conference Paper
1999Optical signal and energy transmission for a retina implant
Groß, M.; Buß, R.; Köhler, K.; Schaub, J.; Jäger, D.
Conference Paper
1999Passivated 0,15 mu m InAlAs/InGaAs HEMTs with 500 GHz f(max). HF performance, thermal stability and reliability
Chertouk, M.; Dammann, M.; Massler, M.; Köhler, K.; Weimann, G.
Conference Paper
1999Reliability of passivated 0.15 mu m InAlAs/InGaAs HEMT's with pseudomorphic channel
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.
Conference Paper
1999Solid-solubility limits of Be in molecular beam epitaxy grown Al(x)Ga(1-x)As layers and short-period superlattices
Gaymann, A.; Maier, M.; Köhler, K.
Journal Article
1999Threshold reduction in pierced microdisk lasers
Backes, S.A.; Cleaver, J.R.A.; Heberle, A.P.; Baumberg, J.J.; Köhler, K.
Journal Article
1999Transport parameters of 2D systems derived from microwave transmission experiments
Brensing, A.; Bauhofer, W.; Köhler, K.
Conference Paper
199820-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
199840 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T.
Journal Article
199840 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Conference Paper
199840 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
1998Anharmonicity of Bloch oscillations in GaAs/AlAs superlattices in the case of inhomogeneously broadened excitonic states in a weak electric field
Litvinenko, K.L.; Okhrimenko, I.; Köhler, K.; Lyssenko, V.; Leo, K.; Löser, F.
Journal Article
1998Bloch wave packets in semiconductor superlattices: Composition and spatial displacement
Löser, F.; Sudzius, M.; Lyssenko, V.G.; Hasche, T.; Leo, K.; Dignam, M.M.; Köhler, K.
Journal Article
1998Coherent control of acoustic phonons in semiconductor superlattices
Bartels, A.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
1998Coherent dynamics of continuum and excitonic states in quantum confined systems
Bakker, H.J.; Dekorsy, T.; Cho, G.C.; Kurz, H.; Leisching, P.; Köhler, K.
Journal Article
1998Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs
Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.
Journal Article
1998Direct measurement of the spatial displacement of Bloch-oscillating electrons in semiconductor superlattices
Sudzius, M.; Lyssenko, V.; Valusis, G.; Löser, F.; Hasche, T.; Dignam, M.; Köhler, K.; Leo, K.
Journal Article
1998Direct observation of the rotational direction of electron spin precession in semiconductors
Oestreich, M.; Hägele, D.; Schneider, H.C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K.H.; Köhler, K.; Koch, S.W.; Rühle, W.W.
Journal Article
1998Effect of atmosphere on reliability of passivated 0.15 mu m InAlAs/InGaAs HEMTs
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.
Journal Article
1998Fano resonances in semiconductor superlattices
Holfeld, C.P.; Löser, F.; Sudzius, M.; Leo, K.; Whittaker, D.M.; Köhler, K.
Journal Article
1998GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m
Leven, A.; Baeyens, Y.; Benz, W.; Bronner, W.; Hülsmann, A.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Reuter, R.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
1998Interaction ruled temperature dependence of the electron cyclotron mass in GaAs heterojunctions
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1998LSI capability demonstration of an 0.15 mu m - 0.3 mu m GaAs HEMT and PM-HEMT 3 level metallization E/D-Technology for mixed signal circuits
Thiede, A.; Lao, Z.; Lienhart, H.; Sedler, M.; Seibel, J.; Hornung, J.; Schneider, J.; Kaufel, G.; Bronner, W.; Köhler, K.; Jakobus, T.; Schlechtweg, M.
Conference Paper
1998Microdisk laser structures for mode control and directional emission
Backes, S.A.; Cleaver, J.R.A.; Heberle, A.P.; Köhler, K.
Journal Article
1998Millimeter wave InP HEMT MMIC technology. Thermal stability and performace
Chertouk, M.; Steinhagen, F.; Massler, H.; Dammann, M.; Haydl, W.H.; Köhler, K.; Weimann, G.
Conference Paper
1998Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Journal Article
1998Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Lao, Z.; Hurm, V.; Thiede, A.; Berroth, M.; Ludwig, M.; Lienhart, H.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Kaufel, G.; Jakobus, T.
Journal Article
1998Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
Bronner, W.; Benz, W.; Dammann, M.; Ganser, P.; Grün, N.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Olander, E.
Conference Paper
1998A NLTL-based integrated circuit for a 70-200 GHz VNA system
Wohlgemuth, O.; Agarwal, B.; Pullela, R.; Mensa, D.; Lee, Q.; Guthrie, J.; Rodwell, M.J.W.; Reuter, R.; Braunstein, J.; Schlechtweg, M.; Krems, T.; Köhler, K.
Conference Paper
1998Optical control of Bloch-oscillation amplitudes: From harmonic spatial motion to breathing modes
Sudzius, M.; Lyssenko, V.G.; Löser, F.; Leo, K.; Dignam, M.M.; Köhler, K.
Journal Article
1998Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 mu m InAlAs/InGaAs HEMTs
Chertouk, M.; Steinhagen, F.; Massler, H.; Haydl, W.H.; Köhler, K.; Weimann, G.
Journal Article
1998Polariton motional narrowing in semiconductor multiple quantum wells
Baumberg, J.J.; Heberle, A.P.; Kavokin, A.V.; Vladimirova, M.R.; Köhler, K.
Journal Article
1998Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy
Gaymann, A.; Maier, M.; Köhler, K.; Bronner, W.; Grotjahn, F.; Hornung, J.; Ludwig, M.
Conference Paper
1998W-band high gain passivated 0.15 mu m InP-based HEMTs MMIC technology with high thermal stability on InP substrates
Chertouk, M.; Steinhagen, F.; Massler, H.; Dammann, M.; Haydl, W.H.; Köhler, K.; Weimann, G.
Conference Paper
199710 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
199720 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Windscheif, J.
Journal Article
199720-40 Gb/s 0.2-mu m GaAs HEMT chip set for optical data receiver
Lang, M.; Wang, Z.-G.; Lao, Z.; Schlechtweg, M.; Thiede, A.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Raynor, B.
Journal Article
199725 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Thiede, A.; Bosch, R.; Hofmann, P.; Hülsmann, A.; Moglestue, C.; Köhler, K.
Conference Paper
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1997Beryllium diffusion in short-period Al(x)Ga(1-x)As/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy
Gaymann, A.; Maier, M.; Bronner, W.; Grün, N.; Köhler, K.
Journal Article
1997Coherent signature of differential transmission signals in semiconductors: Theory and experiment
Bartels, G.; Cho, G.C.; Dekorsy, T.; Kurz, H.; Stahl, A.; Köhler, K.
Journal Article
1997Compositionally graded buffers on GaAs as substrates for Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As MODFETs
Fink, T.; Haupt, M.; Kaufel, G.; Köhler, K.; Braunstein, J.; Massler, H.
Conference Paper
1997Coulomb-renormalized intraband dynamics probed by THz emission
Wolter, F.; Haring Bolivar, P.; Bartels, G.; Roskos, H.G.; Kurz, H.; Axt, V.M.; Köhler, K.
Journal Article
1997Direct measurement of the spatial displacement of bloch-oscillating electrons in semiconductor superlattices
Lyssenko, V.G.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.; Dignam, M.M.
Journal Article
1997Direct measurement of the spatial displacement of bloch-oscillating electrons in semiconductor superlattices
Lyssenko, V.G.; Sudzius, M.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Dignam, M.M.; Köhler, K.
Journal Article
1997Enhanced electro-optic modulation by integration on non-radiative centers in a resonant tunneling light emitting diode
Alphenaar, B.W.; Baumberg, J.J.; Köhler, K.
Journal Article
1997Excitonic emisssion of THz radiation. Experimental evidence of the shortcomings of the Bloch equation method
Haring Bolivar, P.; Wolter, F.; Müller, A.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1997GaAs HEMT ICs for 40 Gbit/s data transmission systems
Lang, M.; Nowotny, U.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1997HEMT circuits for signal/data processing
Berroth, M.; Hurm, V.; Lang, M.; Lao, Z.; Thiede, A.; Wang, Z.-G.; Bangert, A.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Jakobus, T.
Journal Article
1997High performance double recessed Al(0.2)Ga(0.8)As/In(0.25)Ga(0.75)As PHEMTs for microwave power applications
Marsetz, W.; Hülsmann, A.; Kleindienst, T.; Fischer, S.; Demmler, M.; Bronner, W.; Fink, T.; Köhler, K.; Schlechtweg, M.
Conference Paper
1997High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
Lao, Z.; Thiede, A.; Nowotny, U.; Schlechtweg, M.; Hurm, V.; Bronner, W.; Hornung, J.; Rieger-Motzer, M.; Kaufel, G.; Köhler, K.; Hülsmann, A.
Conference Paper
1997High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J.
Conference Paper
1997Influence of LO-phonon emission on bloch oscillations in semiconductor superlattices
Wolter, F.; Roskos, H.G.; Haring Bolivar, P.; Bartels, G.; Kurz, H.; Köhler, K.; Grahn, H.T.; Hey, R.
Journal Article
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Conference Paper
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Journal Article
1997Molecular beam epitaxy of vertically compact Al(x)Ga(1-x)As/GaAs laser-HEMT structures for monolithic integration
Gaymann, A.; Schaub, J.; Bronner, W.; Grün, N.; Hornung, J.; Köhler, K.
Journal Article
1997Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers
Wörner, A.; Westphäling, R.; Kalt, H.; Köhler, K.
Journal Article
1997Shape dependence of emission from microdisk lasers
Backes, S.A.; Heberle, A.P.; Cleaver, J.R.A.; Köhler, K.
Journal Article
1997Spin flip of excitons in GaAs quantum wells
Snoke, D.W.; Rühle, W.W.; Köhler, K.; Ploog, K.
Journal Article
1997Ultrafast acoustic phonon ballistics in semiconductor heterostructures
Baumberg, J.J.; Williams, D.A.; Köhler, K.
Journal Article
1997Ultrafast coherent carrier control in quantum wells
Baumberg, J.J.; Heberle, A.P.; Köhler, K.; Kavokin, A.V.
Journal Article
199610 and 20 Gbit/s clock recovery GaAs IC with 288 deg phase-shifting function
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
199610 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.
Journal Article
199620 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Ludwig, M.; Olander, E.; Raynor, B.; Rosenzweig, J.
Journal Article
199620-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
Berroth, M.; Lang, M.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Schneider, J.
Conference Paper
199640 and 20 Gbit/s monolithic integrated clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1996AlInAs/GaInAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison
Fink, T.; Haupt, M.; Köhler, K.; Raynor, B.; Braunstein, J.; Massler, H.; Tasker, P.J.
Conference Paper
1996Bloch oscillations of excitonic and continuum states in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Köhler, K.; Kurz, H.
Conference Paper
1996Bloch oscillations. Coherent control of wave packet dynamics in superlattices
Lyssenko, V.G.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.; Dignam, M.M.
Conference Paper
1996Broadening of interband resonances in thin AlAs barriers embedded in GaAs
Weimar, U.; Wagner, J.; Gaymann, A.; Köhler, K.
Journal Article
1996Circuit techniques for 10 and 20 Gb/s clock recovery using a fully balanced narrowband regenerative frequency divider with 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.; Briggmann, D.
Conference Paper
1996Coherent exciton dynamics as a function of quantum-well number
Weber, D.; Feldmann, J.; Göbel, E.O.; Stroucken, T.; Knorr, A.; Koch, S.W.; Citrin, D.S.; Köhler, K.
Journal Article
1996Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/GaAs heterostructures
Müller, S.; Weyer, J.L.; Köhler, K.; Jantz, W.; Frigeri, C.
Conference Paper
1996Coplanar millimeter-wave IC's for W-band applications using 0.15 mu m pseudomorphic MODFETs
Schlechtweg, M.; Haydl, W.H.; Bangert, A.; Braunstein, J.; Tasker, P.J.; Verweyen, L.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.
Journal Article
1996Critical point broadening in the dielectric function of thin AlAs barriers on GaAs
Wagner, J.; Weimar, U.; Gaymann, A.; Köhler, K.
Conference Paper
1996Dephasing and selection rules of interband and intraband polarisations in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1996Dephasing dynamics of wave packets in semiconductor superlattices
Valusis, G.; Lyssenko, V.G.; Klatt, D.; Löser, F.; Pantke, K.-H.; Leo, K.; Köhler, K.
Conference Paper
1996Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon
Vaupel, H.; Thomas, P.; Kühn, O.; May, V.; Maschke, K.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1996Exciton dephasing in quantum wells. Influence of spectral fluctuation processes
Löser, F.; Neuber, A.; Klatt, D.; Lyssenko, V.G.; Pantke, K.-H.; Leo, K.; Glutsch, S.; Köhler, K.
Conference Paper
1996Femtosecond coherent fields induced by many-particle correlations in transient four-wave mixing
Schäfer, W.; Kim, D.-S.; Shah, J.; Damen, T.C.; Cunningham, J.E.; Goossen, K.W.; Pfeiffer, L.N.; Köhler, K.
Journal Article
1996Field enhanced blockade of the confined energy levels in nanometer scale pillar arrays
Alphenaar, B.W.; Durrani, Z.A.K.; Wagner, M.; Köhler, K.
Journal Article
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Conference Paper
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Journal Article
1996Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum weels under hydrostatic pressure
Brunthaler, G.; Penn, C.; Suski, T.; Wisniewski, P.; Litwin-Staszewska, E.; Köhler, K.
Journal Article
1996Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1996Intersubband plasmon-phonon modes of a quasi two-dimensional electron gas in GaAs
Friedrich, T.; Rösch, M.; Latussek, V.; Batke, E.; Köhler, K.; Ganser, P.
Conference Paper
1996Low power data decision IC for 20-40 Gbit/s data links using 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1996Metal-non-metal transition at the crossover from antidots to quantum dots
Lütjering, G.; Weiss, D.; Tank, R.W.; Klitzing, K. von; Hülsmann, A.; Jakobus, T.; Köhler, K.
Journal Article
1996Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure. Tuning of the remote-charge correlations
Wisniewski, P.; Suski, T.; Litwin-Staszewska, E.; Brunthaler, G.; Köhler, K.
Journal Article
1996Molecular beam epitaxy of GaAs/Al(x)Ga(1-x)As/In(y)Ga(1-y)As heterostructures for opto-electronic devices. Control of growth parameters
Köhler, K.
Journal Article
1996Nonlinear optical studies of Bloch oscillations
Leisching, P.; Beck, W.; Kurz, H.; Köhler, K.; Schäfer, W.; Leo, K.
Journal Article
1996Optical study of Bloch oscillations in superlattices
Cho, G.C.; Dekorsy, T.; Bakker, H.J.; Kohl, A.; Opitz, B.; Köhler, K.; Kurz, H.
Conference Paper
1996Photon drag spectroscopy of a two-dimensional electron system
Sigg, H.; Son, P. van; Köhler, K.
Journal Article
1996Quantum coherence of continuum states in the valence band of GaAs quantum wells
Dekorsy, T.; Kim, A.M.T.; Cho, G.C.; Hunsche, S.; Bakker, H.J.; Kurz, H.; Chuang, S.L.; Köhler, K.
Journal Article
1996Relaxation dynamics of electrons between Landau levels in GaAs
Hannak, R.M.; Rühle, W.W.; Köhler, K.
Journal Article
1996Resonant polaron coupling of high index electron Landau levels in GaAs heterostructures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1996Time-resolved optical investigations of Bloch oscillations in semiconductor superlattices
Dekorsy, T.; Ott, R.; Leisching, P.; Bakker, H.J.; Waschke, C.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1996Time-resolved study of intervalence band thermalization in a GaAs quantum well
Kim, A.M.T.; Hunsche, S.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Baumberg, J.J.; Heberle, A.P.; Köhler, K.; Ploog, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.; Ploog, K.
Conference Paper
1996Ultrafast hole-lattice thermalization in GaAs quantum wells
Hunsche, S.; Kim, A.M.T.; Dekorsy, T.; Kurz, H.; Köhler, K.
Conference Paper
1996Ultrafast photon drag detector for intersubband spectroscopy
Sigg, H.; Graf, S.; Kwakernaak, M.H.; Margotte, B.; Erni, D.; Son, P. van; Köhler, K.
Journal Article
1996W-band MMIC VCO with a large tuning range using a pseudomorphic HFET
Bangert, A.; Schlechtweg, M.; Lang, M.; Haydl, W.; Bronner, W.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
19951.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Journal Article
199510 Gbit/s monolithic optoelectronic integrated receiver with clock recovery, data decision and 1:4 demultipexer
Wang, Z.-G.; Hurm, V.; Lang, M.; Berroth, M.; Ludwig, M.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
1995110 GHz Amplifiers Based on Compact Coplanar W-Band Receiver Technology
Schlechtweg, M.; Haydl, W.H.; Braunstein, J.; Tasker, P.J.; Bangert, A.; Reinert, W.; Verweyen, L.; Massler, H.; Seibel, J.; Züfle, K.H.; Bronner, W.; Fink, T.; Hülsmann, A.; Hofmann, P.; Kaufel, G.; Köhler, K.
Conference Paper
199517 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.; Wang, Z.-G.
Journal Article
199517 GHz-bandwidth 17dB-gain 0.3 micrometer-HEMT low power limiting amplifier
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199530 GHz static frequency divider using a 0.2 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.
Journal Article
1995Band-gap renormalization and excitonic effects in tunneling in asymmetric double quantum wells
Tackeuchi, A.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1995Bloch oscillations at room temperature
Dekorsy, T.; Ott, R.; Kurz, H.; Köhler, K.
Journal Article
1995Bloch oscillations in semiconductor superlattices
Roskos, H.G.; Waschke, C.; Victor, K.; Köhler, K.; Kurz, H.
Journal Article
1995Coherent dynamics of excitonic and biexcitonic wave packets in semiconductor superlattices
Leisching, P.; Ott, R.; Bolivar, P.H.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1995Coherent exciton-photon dynamics in single, double, and quintuple quantum wells.
Weber, D.; Feldmann, J.; Göbel, E.O.; Citrin, D.S.; Köhler, K.
Journal Article
1995Compact high gain low 60 to 80 GHz amplifiers on GaAs
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Maßler, H.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schneider, J.
Conference Paper
1995Elastic contants and Poisson ratio in the system AlAs-GaAs
Herres, N.; Köhler, K.; Krieger, M.; Sigg, H.; Bachem, K.H.
Journal Article
1995Electron g factor in quantum wells determined by spin quantum beats
Hannak, R.M.; Oestreich, M.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1995Exceptionally slow dephasing of electronic continuum states in a semiconductor
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Kurz, H.; Köhler, K.
Journal Article
1995External-field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing
Beck, W.; Leisching, P.; Kurz, H.; Schaefer, W.; Leo, K.; Köhler, K.
Journal Article
1995External-field-induced electric dipole moment of biexcitons in a semiconductor
Leisching, P.; Ott, R.; Haring Bolivar, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1995Four-wave-mixing theory beyond the semiconductor Bloch equations
Axt, V.M.; Stahl, A.; Mayer, E.J.; Haring Bolivar, P.; Nüsse, S.; Ploog, K.; Köhler, K.
Journal Article
1995Interaction coupled cyclotron transitions of two-dimensional electron systems in GaAs at high temperatures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1995Laser emission in indirect-gap AlxGa1-xAs
Westphäling, R.; Wörner, A.; Kalt, H.; Köhler, K.
Conference Paper
1995Mobility enhancement due to spatial correlation of remote impurity charges in delta-doped AlGaAs/GaAs heterostructure
Suski, T.; Brunthaler, G.; Stöger, G.; Köhler, K.; Wisniewski, P.
Conference Paper
1995Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1995Monolithic integrated optoelectronic circuits for optical links
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1995Monolithic integration of 1.3-mym InGaAs photodetectors and HEMT electronic circuits on GaAs
Fink, T.; Hurm, V.; Raynor, B.; Köhler, K.; Benz, W.; Ludwig, M.
Conference Paper
1995Non-Markovian polarization decay in semiconductor quantum wells by three-beam four-wave mixing
Löser, F.; Klatt, D.; Pantke, K.-H.; Leo, K.; Bakker, H.; Shah, J.; Köhler, K.
Journal Article
1995Resonance fluorescence and polariton effects in GaAs thin layers
Schneider, H.; Köhler, K.
Journal Article
1995Spin-split cyclotron resonance and spatial distribution of interacting electrons
Hu, C.M.; Friedrich, T.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1995Surface influence on the doping dependence of the E1 plus Delta1 critical points of GaAs - electric field and inpurity unscreening effect
Kuball, M.; Kelly, M.K.; Santos, P.V.; Cardona, M.; Köhler, K.; Wagner, J.
Conference Paper
1995Time-resolved luminescence of semiconductor heterostructures in high magnetic field
Heberle, A.P.; Haacke, S.; Oestreich, M.; Potemski, M.; Rühle, W.W.; Maan, J.C.; Köhler, K.; Weimann, G.; Queisser, H.-J.
Journal Article
1995Ultrafast coherent control and destruction of excitons in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.
Journal Article
1995Ultrafast far-infrared GaAs/AlGaAs photon drag detector in microwave transmission line topology.
Sigg, H.; Kwakernaak, M.H.; Margotte, A.B.; Erni, D.; Son, P. van; Köhler, K.
Journal Article
1995X(5) signature in th four-wave-mixing signal from a GaAs/Al(0.3)Ga(0.7)As superlattice
Bartels, G.; Axt, V.M.; Victor, K.; Stahl, A.; Leisching, P.; Köhler, K.
Journal Article
19940.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Journal Article
19941.3 mym monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Conference Paper
199419 GHz monolithic integrated clock recovery using PLL and 0.3 mym gate-length quantum-well HEMTs.
Wang, Z.-G.; Berroth, M.; Seibel, J.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199420 Gb/s monolithic integrated clock recovery and data decision
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3 micro-meter gate length well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1994Bloch oscillations in GaAs/AlGaAs superlattices after excitation well above the bandgap
Roskos, H.G.; Waschke, C.; Schwedler, R.; Leisching, P.; Dhaibi, Y.; Kurz, H.; Köhler, K.
Journal Article
1994Bloch oscillations in superlattices
Leisching, P.; Waschke, C.; Bolivar, P.H.; Beck, W.; Roskos, H.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Book Article
1994Bloch oscillations of excitonic wave packets semiconductor superlattices
Leisching, P.; Haring Bolivar, P.; Beck, W.; Dhaibi, Y.; Brüggemann, F.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1994Circumferential arrays used for UT endoscopy on heat exchanger tubes
Liebig, V.; Köhler, K.; Gebhardt, W.; Kröning, M.; Mummert, K.
Conference Paper
1994Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.
Heberle, A.P.; Zhou, X.Q.; Tackeuchi, A.; Rühle, W.W.; Köhler, K.
Journal Article
1994Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing.
Waschke, C.; Leisching, P.; Bolivar, P.H.; Schwedler, R.; Brüggemann, F.; Roskos, H.G.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Conference Paper
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1994Direct observation of resonant tunneling dynamics in high magnetic fields
Heberle, A.P.; Oestreich, M.; Haacke, S.; Rühle, W.W.; Maan, J.C.; Köhler, K.
Journal Article
1994Doping dependence of the E1 and E1 plus Delta1 critical points in highly doped n- and p-type GaAs: Importance of surface band bending and depletion
Kuball, M.; Kelly, M.K.; Cardona, M.; Köhler, K.; Wagner, J.
Journal Article
1994Effect on non-ideal delta doping layers in Al0.3Ga0.7As/In0.3Ga0.7As pseudomorphic heterostructures
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Hiesinger, P.; Gonzalez-Sanz, F.; Calleja, E.; Köhler, K.; Jantz, W.; Munoz, E.
Conference Paper
1994Electro-optic detection of Bloch oscillations
Dekorsy, T.; Leisching, P.; Köhler, K.; Kurz, H.
Journal Article
1994Exciton absorption saturation by phase-space filling: Influence of carrier temperature and density
Hunsche, S.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1994Experimental realization of the Bloch oscillator in a semiconductor superlattice.
Waschke, C.; Roskos, H.G.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1994Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography
Hülsmann, A.; Bronner, W.; Köhler, K.; Braunstein, J.; Tasker, P.J.
Journal Article
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Conference Paper
1994Femtosecond intersubband relaxation in GaAs quantum wells
Hunsche, S.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1994Gds and fT analysis of pseudomorphic MODFETs with gate lengths down to 0.1 mym
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1994Influence of Coulombic broadened DX center energy levels on free electron concentration in delta-doped AlxGa1-xAs/GaAs quantum wells
Brunthaler, G.; Seto, M.; Stöger, G.; Köhler, K.
Journal Article
1994Influence of delta doping profile and interface roughness on the transport properties of pseudomorphic heterostructures.
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Gonzalez-Sanz, F.; Calleja, E.; Munoz, E.; Hiesinger, P.; Köhler, K.; Jantz, W.
Journal Article
1994Influence of DX center structure on Si modulation delta-doping in AlGaAs/GaAs quantum wells.
Brunthaler, G.; Seto, M.; Stöger, G.; Ostermayer, G.; Köhler, K.
Journal Article
1994Instantaneous contribution in time-resolved four-wave mixing from GaAs quantum wells near zero time delay
Kim, D.-S.; Shah, J.; Damen, T.C.; Schäfer, W.; Pfeiffer, L.N.; Köhler, K.
Journal Article
1994Internal field dynamics of cohorent Bloch oscillations in supperlattices
Dekorsy, T.; Leisching, P.; Beck, W.; Ott, R.; Dhaibi, Y.; Schwedler, R.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1994Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing.
Leisching, P.; Bolivar, P.H.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Journal Article
1994Molecular beam epitaxy and technology for the monolithic integration of quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.
Conference Paper
1994Monolithic integrated 75 GHz oscillator with high output power using a pseudomorphic HFET
Bangert, A.; Schlechtweg, M.; Reinert, W.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Conference Paper
1994On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.
Stöger, G.; Brunthaler, G.; Ostermayer, G.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1994Optical properties of low temperature grown GaAs - the influence of a hydrogen plasma treatment
Weber, J.; Köhler, K.; Vetterhöffer, J.
Conference Paper
1994Optical response of a pseudomorphic HFET photodetector up to 10 GHz. TH1D-6
Bangert, A.; Rosenzweig, J.; Ludwig, M.; Bronner, W.; Hofmann, P.; Köhler, K.
Conference Paper
1994Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.; Köhler, K.
Journal Article
1994Process technology for InGaAs/InAlAs modulation doped field effect transistors on InP substrates
Fink, T.; Raynor, B.; Haupt, M.; Köhler, K.; Braunstein, J.; Hornung, J.; Grün, N.
Journal Article
1994Terahertz Bloch oscillations in semiconductor superlattices
Dekorsy, T.; Leisching, P.; Waschke, C.; Köhler, K.; Leo, K.; Roskos, H.G.; Kurz, H.
Journal Article
1994Time-resolved studies of Bloch oscillations in semiconductor superlattices
Leisching, P.; Dekorsy, T.; Waschke, C.; Roskos, H.G.; Leo, K.; Kurz, H.; Köhler, K.
Book Article
1994Time-resolved study of depashing mechanismen of excitons in GaAs/Al(x)Ga(1-x)As quantum-well structures
Bakker, H.J.; Leo, K.; Shah, J.; Köhler, K.
Journal Article
1994Voltage dependence of the optical response of a pseudomorphic HFET-photodetector
Bangert, A.; Rosenzweig, J.; Bosch, R.; Bronner, W.; Köhler, K.; Raynor, B.
Conference Paper
199314 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver.
Hurm, V.; Ludwig, M.; Rosenzweig, J.; Benz, W.; Berroth, M.; Bosch, R.; Bronner, W.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199328-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U.
Journal Article
19937.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Hornung, J.; Wang, Z.-G.; Bronner, W.; Olander, E.; Köhler, K.; Ganser, P.; Raynor, B.; Benz, W.; Ludwig, M.
Journal Article
19937.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 mym gate length quantum well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993Auger recombination in intrinsic GaAs
Strauss, U.; Rühle, W.W.; Köhler, K.
Journal Article
1993Coherent submillimeter-wave emission from Bloch oscillations in a semiconductor superlattice
Waschke, C.; Roskos, H.G.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.
Journal Article
1993Comparison of Si delta-doping with homogenous doping in GaAs.
Köhler, K.; Ganser, P.; Maier, M.
Journal Article
1993Compositional analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by determination of film thickness.
Maier, M.; Köhler, K.; Höpner, A.; As, D.J.
Journal Article
1993Coupling of exciton transitions associated with different quantum-well islands
Koch, M.; Feldmann, J.; Göbel, E.O.; Thomas, P.; Shah, J.; Köhler, K.
Journal Article
1993Digital dynamic frequency dividers for broad band application up to 60 GHz.
Thiede, A.; Berroth, M.; Tasker, P.J.; Schlechtweg, M.; Seibel, J.; Raynor, B.; Hülsmann, A.; Köhler, K.; Bronner, W.
Conference Paper
1993Doping-density dependence of photoluminescence in highly Si-doped GaAs/Al(x)Ga(1-x)As quantum wells from below to above the metallic limit
Harris, C.I.; Monemar, B.; Kalt, H.; Köhler, K.
Journal Article
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Journal Article
1993Fabrication and performance of 1-dim MODFETs.
Hülsmann, A.; Roman, P.; Braunstein, J.; Kaufel, G.; Köhler, K.; Jakobus, T.
Journal Article
1993Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1993High gain 70-80 GHz MMIC amplifiers in coplanar waveguide technology.
Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Braunstein, J.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Journal Article
1993High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band
Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Hülsmann, A.; Köhler, K.; Bronner, W.; Bosch, R.; Haydl, W.
Conference Paper
1993Hydrogen passivation of shallow impurities in GaAs/AlGaAs quantum wells.
Harris, C.I.; Stutzmann, M.; Köhler, K.
Journal Article
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Ludwig, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1993Integration of a quantum well laser with AlGaAs/GaAs-HEMT electronics.
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.; Wang, Z.-G.
Conference Paper
1993Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.
Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993MODFET technology optimization for MMICs using statistical microwave characterization
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Kaufel, G.; Schlechtweg, M.
Conference Paper
1993Observation of Bloch oscillations in a semiconductor superlattice
Haring Bolivar, P.; Leisching, P.; Leo, K.; Shah, J.; Köhler, K.
Book Article
1993Optical control of pseudomorphic HEMT-based MMIC oscillators.
Bangert, A.; Rosenzweig, J.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Schneider, J.
Journal Article
1993Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/'InGa'As/'AlGa'As quantum wires fabricated by lateral top barrier modulation
Wagner, J.; Behr, D.; Richards, D.; Bickl, T.; Forchel, A.; Emmerling, M.; Köhler, K.
Journal Article
1993Optical investigation of delta-doped In0.1Ga0.9As-Si/GaAs strained quantum wells.
Richards, D.; Maier, M.; Köhler, K.; Wagner, J.
Journal Article
1993Optical spectroscopy of shallow impurity states in semiconductor quantum wells.
Monemar, B.; Holtz, P.O.; Harris, C.I.; Bergmann, J.P.; Kalt, H.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Köhler, K.; Schweizer, T.
Journal Article
1993Phase analysis of interfacial carbon in GaAs grown by molecular beam epitaxy
Maier, M.; Köhler, K.
Conference Paper
1993Quantum beats versus polarization interference - an experimental distinction
Koch, M.; Feldmann, J.; Plessen, G. von; Göbel, E.O.; Thomas, P.; Köhler, K.
Book Article
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Journal Article
1993Relating mym-wave mapped data to physical parameters for MODFETs.
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Hülsmann, A.; Kaufel, G.; Köhler, K.
Journal Article
1993Stability of an AlGaAs/GaAs/AlGaAsE/D-HEMT process with double pulse doping
Jakobus, T.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Landsberg, B.; Raynor, B.; Schneider, J.; Grün, N.; Windscheif, J.; Berroth, M.; Hornung, J.
Conference Paper
1993Temperature-dependent cyclotron resonances in n-type GaAs
Batke, E.; Bollweg, K.; Merkt, U.; Hu, C.M.; Köhler, K.; Ganser, P.
Journal Article
1993Terahertz radiation from coherent electron oscillations in a double-quantum-well structure.
Roskos, H.G.; Nuss, M.C.; Shah, J.; Leo, K.; Miller, D.A.B.; Schmitt-Rink, S.; Köhler, K.
Book Article
1993Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs-Si.
Brunthaler, G.; Stöger, G.; Aumayr, A.; Köhler, K.
Journal Article
1993Very broad band TWAs to 80 GHz on GaAs substrate
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Reinert, W.; Köhler, K.; Bronner, W.; Haydl, W.
Conference Paper
1993Very broadband distributed amplifier to 75 GHz.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Köhler, K.; Bronner, W.; Haydl, W.
Journal Article
199210-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Hurm, V.; Lang, M.; Ludwig, G.; Hülsmann, A.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wang, Z.-G.; Wennekers, P.
Conference Paper
199210-Gb/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs technology.
Hülsmann, A.; Schneider, J.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wennekers, P.
Journal Article
199215 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.
Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Wang, Z.-G.
Journal Article
199216 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J.
Journal Article
199218 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.
Nowotny, U.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Wang, Z.-G.
Journal Article
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Journal Article
1992AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.
Jost, W.; Kaufmann, U.; Schneider, J.; Köhler, K.; Alt, H.C.; Kunzer, M.
Journal Article
1992Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology.
Reinert, W.; Hülsmann, A.; Schneider, J.; Bosch, R.; Kaufel, G.; Köhler, K.; Raynor, B.; Wennekers, P.
Journal Article
1992Coherent submillimeter-wave emission from charge oscillations in a double-well potential
Roskos, H.G.; Nuss, M.C.; Miller, D.A.B.; Köhler, K.; Leo, K.; Schmitt-Rink, S.; Shah, J.
Journal Article
1992Compositional analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
Höpner, A.; As, D.J.; Köhler, K.; Maier, M.
Conference Paper
1992Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models.
Schlechtweg, M.; Reinert, W.; Tasker, P.J.; Braunstein, J.; Hülsmann, A.; Bosch, R.; Köhler, K.
Conference Paper
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1992Dissipative dynamics of an electronic wavepacket in a semiconductor double well potential.
Schulze, A.; Meier, T.; Thomas, P.; Luo, M.S.C.; Schäfer, W.; Chuang, S.L.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schmitt-Rink, S.; Shah, J.
Journal Article
1992The exciton formation time in a GaAs quantum well
Eccleston, R.; Strobel, R.; Kuhl, J.; Köhler, K.
Conference Paper
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Journal Article
1992Indirect optically controlled pseudomorphic HEMT based MMIC oscillator
Bangert, A.; Benz, W.; Hülsmann, A.; Hurm, V.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Rosenzweig, J.
Conference Paper
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Conference Paper
1992Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage.
Eisen, F.H.; Bachem, K.H.; Klausman, E.; Köhler, K.; Haddad, R.
Journal Article
1992Mushroom shaped gates in a dry etched recessed gate process
Kaufel, G.; Hülsmann, A.; Raynor, B.; Hofmann, P.; Schneider, J.; Hornung, J.; Jakobus, T.; Berroth, M.; Köhler, K.
Conference Paper
1992Observation of Bloch oscillations in a semiconductor superlattice
Leo, K.; Bolivar, P.H.; Brüggemann, F.; Schwedler, R.; Köhler, K.
Journal Article
1992Optical dephasing of light-hole excitons in GaAs single quantum wells
Honold, A.; Saku, T.; Horikoshi, Y.; Köhler, K.
Journal Article
1992Optical spectroscopy of bound excitons in AlGaAs/GaAs quantum wells
Monemar, B.; Holtz, P.O.; Bergmann, J.P.; Harris, C.; Sundaram, M.; Merz, J.P.; Gossard, A.C.; Schweizer, T.; Kalt, H.; Köhler, K.
Conference Paper
1992Optically induced carrier transfer in silicon anti-modulation-doped GaAs/Al(x)Ga(1-x)As single quantum wells
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Köhler, K.
Journal Article
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Conference Paper
1992Polarization dependence of heavy- and light-hole quantum beats
Schmitt-Rink, S.; Bennhardt, D.; Heuckeroth, V.; Thomas, P.; Haring, P.; Maidorn, G.; Bakker, H.; Leo, K.; Kim, D.-S.; Shah, J.; Köhler, K.
Journal Article
1992Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures.
Schweizer, T.; Ganser, P.; Köhler, K.
Journal Article
1992Probing the In mole fraction limits for pseudomorphic MODFETs.
Braunstein, J.; Tasker, P.J.; Reinert, W.; Schlechtweg, M.; Bosch, R.; Köhler, K.; Hülsmann, A.; Kaufel, G.
Conference Paper
1992Quantum beats of excitons in quantum wells
Schmitt-Rink, S.; Damen, T.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Shah, J.
Journal Article
1992Quantum beats versus polarization interference: An experimental distinction
Koch, M.; Feldmann, J.; Plessen, G. von; Göbel, E.O.; Thomas, P.; Köhler, K.
Journal Article
1992Raman spectroscopy assessment of laterally structured delta-doped GaAs-Si.
Hülsmann, A.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
1992Resonances in tunnelling between quantum wells
Heberle, A.P.; Rühle, W.W.; Alexander, M.G.W.; Köhler, K.
Journal Article
1992Resonant electron and hole tunneling between GaAs quantum wells
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Screening and correlation effects in degenerately center doped GaAs/AlGaAs single quantum wells.
Harris, C.I.; Kalt, H.; Monemar, B.; Köhler, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In(0.16)Ga(0.84)As/Al(0.29)Ga(0.71)As quantum wells on a GaAs substrate
Kunzer, M.; Hendorfer, G.; Kaufmann, U.; Köhler, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U.
Conference Paper
1992Subpicosecond spectroscopy of excitons in GaAs/AlGaAs heterostructures
Leo, K.; Shah, J.; Schmitt-Rink, S.; Köhler, K.
Conference Paper
1992Temperature-induced spin reversal in n-GaAs.
Batke, E.; Bollweg, K.; Merkt, U.; Ganser, P.; Köhler, K.
Journal Article
1992Time-resolved four-wave mixing in GaAs/AlAs quantum well structures.
Koch, M.; Feldmann, J.; Plessen, G. von; Meier, T.; Schulze, A.; Thomas, P.; Göbel, E.O.; Köhler, K.; Ploog, K.; Schmitt-Rink, S.
Journal Article
1992Tunneling between quantum wells.
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Tunneling of electrons and holes in asymmetric double quantum well structures.
Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.
Journal Article
1992Tunneling through single AlGaAs barriers
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1992Ultrafast dephasing in GaAs and GaAs/AlGaAs quantum wells
Leo, K.; Haring Bolivar, P.; Maidorn, G.; Kurz, H.; Köhler, K.
Conference Paper
1992Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs.
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Hülsmann, A.; Schneider, J.; Köhler, K.; Moglestue, C.; Ploog, K.; Rosenzweig, J.
Journal Article
1992Unusually slow temporal evolution of femtosecond four-wave-mixing signals in intrinsic GaAs quantum wells: Direct evidence for the dominance of interaction effects
Schäfer, W.; Jahnke, F.; Damen, T.C.; Kim, D.-S.; Köhler, K.; Schmitt-Rink, S.; Shah, J.
Journal Article
199110 Gbit/s bit-synchronizer with automatic retiming clock alignement using Quantum Well AlGaAs/GaAs/AlGaAs technology
Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.; Wennekers, P.
Conference Paper
199110 Gbit/s low-power bit synchroniser with automatic retiming phase alignment.
Wennekers, P.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.
Journal Article
199110 Gbit/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver.
Hurm, V.; Ludwig, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Rosenzweig, J.
Conference Paper
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199114 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology.
Wennekers, P.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.
Journal Article
1991A 2.5 ns 8x8-b parallel multiplier using 0.5 mym GaAs/GaAlAs heterostructure field effect transistors
Hurm, V.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
199120 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Lang, M.; Hurm, V.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
19918.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Benz, W.; Huelsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
1991Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application
Bachem, K.H.; Hornung, J.; Hülsmann, A.; Ganser, P.; Köhler, K.; Maier, M.
Conference Paper
1991Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures.
Schweizer, T.; Ganser, P.; Köhler, K.
Journal Article
1991Coherent oscillations of a wave packet in a semiconductor double-quantum-well structure
Damen, T.C.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Schmitt-Rink, S.; Shah, J.
Conference Paper
1991Competition between tunneling and exciton formation for photoexcited carriers in asymmetric double quantum wells.
Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.
Conference Paper
1991Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells.
Monemar, B.; Kalt, H.; Harris, C.I.; Bergman, J.P.; Holtz, P.O.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Schweizer, T.; Köhler, K.
Journal Article
1991GaAs/AlGaAs HEMT's with sub 0.5 mym gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic -DCFL-
Hülsmann, A.; Kaufel, G.; Raynor, B.; Glorer, K.H.; Olander, E.; Weismann, B.; Schneider, J.; Jakobus, T.; Koehler, K.
Conference Paper
1991Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures.
Schweizer, T.; Rothemund, W.; Ganser, P.; Köhler, K.
Journal Article
1991Hole-tunneling dynamics in biased GaAs/Al(0.35)Ga(0.65)As asymmetric double quantum wells
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Köhler, K.
Journal Article
1991Indirect stimulated emission at room temperature in the visible range.
Bauser, E.; Kalt, H.; Köhler, K.; Lu, Y.-C.; Rinker, M.
Conference Paper
1991Indirect-to-direct transition of stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Bauser, E.; Ganser, P.; Köhler, K.
Journal Article
1991Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.
Journal Article
1991Influence of Si segregation on the two-dimensional electron gas mobility of inverted HEMT structures.
Hiesinger, P.; Jantz, W.; Köhler, K.; Maier, M.
Journal Article
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Journal Article
1991Measurement of the exciton-formation time and the electron- and hole-tunneling times in a double-quantum-well structure
Strobel, R.; Eccleston, R.; Kuhl, J.; Köhler, K.
Journal Article
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Journal Article
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Conference Paper
1991Plasma etching damage in GaAs studied by resonant Raman scattering.
Pletschen, W.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Conference Paper
1991Quantum beats of excitons in quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Köhler, K.; Damen, T.C.; Göbel, E.O.
Journal Article
1991Resonant and nonresonant tunneling in GaAs/AlxGa1-xAs asymmetric double quantum wells.
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.
Journal Article
1991Resonant tunneling in double quantum wells - the cases of strong and weak collisions.
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Göbel, E.O.; Köhler, K.
Conference Paper
1991Subpicosecond four-wave mixing in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.
Journal Article
1991Terahertz absorption between split subbands in coupled Quantum Wells.
Cunningham, J.; Köhler, K.; Nuss, M.C.; Roskos, H.; Shah, J.; Tell, B.
Conference Paper
1991Time-resolved optical investigation of tunneling of carriers through single AlxGa1-xAs barriers
Rühle, W.W.; Heberle, A.P.; Alexander, M.G.W.; Nido, M.; Köhler, K.
Journal Article
1991Variations of the confining potential of doped AlGaAs/GaAs Quantum Wells with the photon energy of excitation.
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Schweizer, T.; Köhler, K.
Journal Article
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Journal Article
1990E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Köhler, K.
Journal Article
1990Electron and hole tunneling transfer times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells under electric field.
Nido, M.; Alexander, M.G.W.; Rühle, W.E.; Köhler, K.
Conference Paper
1990Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Reimann, K.; Ploog, K.; Köhler, K.
Journal Article
1990Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K.
Conference Paper
1990Femtosecond transient-grating experiments in quantum wells
Schmitt-Rink, S.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Shah, J.
Conference Paper
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Journal Article
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Conference Paper
1990Influence of dry etch conditions on the properties of Schottky contacts to n-GaAs
Pletschen, W.; Bachem, K.H.; Hornung, J.; Kaufel, G.; Köhler, K.
Conference Paper
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Journal Article
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Journal Article
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Conference Paper
1990Molekularstrahlepitaxieanlage
Bachem, K.H.; Koehler, K.; Hofmann, P.
Patent
1990Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1-xAs-Si.
Brunthaler, G.; Köhler, K.
Journal Article
1990Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells.
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Schweizer, T.; Köhler, K.
Journal Article
1990A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Harris, C.; Monemar, B.; Kalt, H.; Schweizer, T.; Köhler, K.
Conference Paper
1990Quantum beats from extended electronic states in quantum wells
Müller, J.F.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Conference Paper
1990Quantum beats of free and bound excitons in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Köhler, K.; Damen, T.C.
Journal Article
1990Quantum beats of light hole and heavy hole excitons in quantum wells.
Damen, T.C.; Köhler, K.; Leo, K.; Shah, J.
Journal Article
1990Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.
Journal Article
1990Subpicosecond transient four-wave-mixing experiments. A novel method to study resonant tunneling.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Journal Article
1990Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1-xAs-Si.
Brunthaler, A.; Köhler, K.
Journal Article
1990Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Journal Article
1989Gamma- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells.
Alexander, M.G.W.; Nido, M.; Reimann, K.; Rühle, W.W.; Köhler, K.
Journal Article
1989Gasversorgungseinrichtung fuer eine Molekularstrahlepitaxieanlage
Bachem, K.H.; Hofmann, P.; Koehler, K.
Patent
1989Tunneling between two quantum wells - In0.35Ga0.47As/InP versus GaAs/Al0.35Ga0.65As.
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Sauer, R.; Köhler, K.; Tsang, W.T.
Journal Article