Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Conference Paper
2019Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zong Wei; Erlbacher, Tobias; Bauer, Anton J.
Conference Paper
2019Raman Spectroscopy Characterization of Ion Implanted 4H-SiC and its Annealing Effects
Xu, Zongwei; Song, Ying; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, Fengzhou
Conference Paper
2018Decoration of Al implantation profiles in 4H-SiC by bevel grinding and dry oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton
Poster
2018Determination of compensation ratios of Al-implanted 4H-SiC by TCAD modelling of TLM measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zongwei; Erlbacher, Tobias; Bauer, Anton
Poster
2018Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing
Kocher, Matthias; Rommel, Mathias; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton
Poster
2018Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing
Kocher, Matthias; Rommel, Mathias; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.
Conference Paper
2018Influence of Al doping concentration and annealing parameters on TiAl based Ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton J.
Conference Paper
2018Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects
Xu, Zongwei; Song, Y.; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, F.Z.
Poster
2017Influence of Al doping concentration and annealing parameters on TiAl based ohmic contacts on 4H-SiC
Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Poster
2017Point contact current voltage measurements of 4H-SiC samples with different doping profiles
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Conference Paper
2016Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Poster