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| 2012 | Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brückner, P.; Seelmann-Eggebert, M.; Tessmann, A.; Mikulla, M.; Kallfass, I.; Quay, R. | Journal Article |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2012 | Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R. | Conference Paper |
| 2011 | Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Journal Article |
| 2011 | A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Brueckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Bruckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, W.; Kiefer, R.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2011 | A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O. | Conference Paper |
| 2010 | AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2010 | Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O. | Journal Article |
| 2010 | Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Journal Article |
| 2010 | GaN-based amplifiers for wideband applications
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R. | Journal Article |
| 2010 | High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Conference Paper |
| 2010 | Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K. | Conference Paper |
| 2009 | Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2009 | Design of X-band GaN MMICs using field plates
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2009 | GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Journal Article |
| 2009 | High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O. | Conference Paper |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2009 | X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Journal Article |
| 2008 | Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Conference Paper |
| 2008 | GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Conference Paper |
| 2008 | High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G. | Journal Article |
| 2008 | A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al. | Conference Paper |
| 2007 | Effect of electrochemical synthesis conditions on deflection of PEDOT bilayers
Kiefer, R.; Weis, D.G.; Travas-Sejdic, J.; Urban, G.; Heinze, J. | Journal Article |
| 2007 | GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2007 | Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2006 | 20W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R. | Conference Paper |
| 2006 | Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2006 | GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G. | Journal Article |
| 2006 | III-Sb-based type-I QW diode lasers
Rattunde, M.; Schmitz, J.; Mermelstein, C.; Kiefer, R.; Wagner, J. | Book Article |
| 2006 | Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W. | Conference Paper |
| 2006 | Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Conference Paper, Journal Article |
| 2006 | Two-stage GaN based multiband power amplifier for software defined radio applications
Naß, T.; Wiegner, D.; Seyfried, U.; Templ, W.; Weber, S.; Wörner, S.; Klose, P.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Kappeler, O.; Kiefer, R. | Conference Paper |
| 2006 | X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs
Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2006 | X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Journal Article, Conference Paper |
| 2005 | An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2005 | Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L. | Journal Article |
| 2005 | High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Walcher, H.; Kappeler, O.; Seelmann-Eggebert, M.; Muller, S.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M. | Conference Paper |
| 2005 | MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J. | Conference Paper, Journal Article |
| 2005 | A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2005 | Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2004 | Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Journal Article |
| 2004 | Elektrooptisches Fluessigkristallschaltelement
Baur, G.; Fehrenbach, W.; Staudacher, B.; Windscheid, F.; Kiefer, R. | Patent |
| 2004 | High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R. | Conference Paper |
| 2004 | Interband type-II miniband-to-bound state diode lasers for the midinfrared
Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J. | Journal Article |
| 2004 | Robust GaN HEMT low-noise amplifier MMICs for X-band applications
Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | AlGaN/GaN HEMTs on SiC: Towards power operation at V-band
Quay, R.; Tessmann, A.; Kiefer, R.; Weber, R.; Raay, F. van; Kuri, M.; Riessle, M.; Massler, H.; Müller, S.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G. | Journal Article |
| 2003 | Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J. | Conference Paper |
| 2003 | Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology
Seemann, K.; Ramberger, S.; Tessmann, A.; Quay, R.; Schneider, J.; Riessle, M.; Walcher, H.; Kuri, M.; Kiefer, R.; Schlechtweg, M. | Conference Paper |
| 2003 | Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Conference Paper |
| 2003 | High performance QWIP FPAs for the 8-12 µm and 3-5 µm regimes
Schneider, H.; Fleißner, J.; Rehm, R.; Kiefer, R.; Walther, M.; Koidl, P.; Weimann, G. | Conference Paper |
| 2003 | Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications
Raay, F. van; Quay, R.; Kiefer, R.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | Mid-infrared quantum cascade lasers operation above room temperature
Yang, Q.K.; Mann, C.; Fuchs, F.; Kiefer, R.; Köhler, K.; Schneider, H. | Conference Paper |
| 2003 | Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications
Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G. | Conference Paper |
| 2003 | Quantum cascade lasers for the mid-infrared spectral range: Devices and applications
Mann, C.; Yang, Q.K.; Fuchs, F.; Bronner, W.; Kiefer, R.; Köhler, K.; Schneider, H.; Kormann, R.; Fischer, H.; Gensty, T.; Elsässer, W. | Conference Paper |
| 2003 | Silicon nitride films deposited using ECR-PECVD technique for coating InGaAlAs high power laser facets
Sah, R.E.; Rinner, F.; Baumann, H.; Kiefer, R.; Mikulla, M.; Weimann, G. | Journal Article |
| 2003 | Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J. | Conference Paper |
| 2002 | 1.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Journal Article |
| 2002 | AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2002 | AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J. | Journal Article |
| 2002 | Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Conference Paper |
| 2002 | Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R. | Conference Paper |
| 2002 | High-density plasma deposited silicon nitride films for coating InGaAlAs high-power lasers
Sah, R.E.; Rinner, F.; Kiefer, R.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm
Kelemen, M.T.; Rinner, F.; Rogg, J.; Wiedmann, N.; Kiefer, R.; Walther, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | Improvement of lambda ~ 5 µm quantum cascade lasers by blocking barriers in the active regions
Yang, Q.K.; Mann, C.; Fuchs, F.; Kiefer, R.; Köhler, K.; Rollbühler, N.; Schneider, H.; Wagner, J. | Journal Article |
| 2002 | Near-diffraction-limited high power diode laser tunable from 895 to 960 nm
Kelemen, M.T.; Rinner, F.; Rogg, J.; Kiefer, R.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | Physics and applications of III-Sb based type-I QW diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J. | Conference Paper |
| 2002 | Quantum cascade lasers with blocking barriers in the active regions
Mann, C.; Yang, Q.K.; Fuchs, F.; Kiefer, R.; Köhler, K.; Schneider, H. | Conference Paper |
| 2002 | Sb-based mid-infrared diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Simanowski, S.; Kiefer, R.; Walther, M.; Wagner, J. | Conference Paper |
| 2001 | Etch-depth dependence of laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2001 | Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G. | Journal Article |
| 2001 | High Power 980 nm Laser Diodes by MBE
Mikulla, M.; Kelemen, M.T.; Walther, M.; Kiefer, R.; Moritz, R.; Weimann, G. | Conference Paper |
| 2001 | High-brightness laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2001 | Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2001 | Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J. | Journal Article |
| 2001 | Optoelectronic properties of Photodiodes for the mid- and far-infrared based on the InAs/GaSB/AlSb materials family
Fuchs, F.; Bürkle, L.; Hamid, R.; Herres, N.; Pletschen, W.; Sah, R.E.; Kiefer, R.; Schmitz, J. | Conference Paper |
| 2001 | Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J. | Conference Paper |
| 2001 | Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J. | Conference Paper |
| 2001 | Thermally induced stress changes in high-density plasma deposited silicon nitride films
Sah, R.E.; Baumann, H.; Mikulla, M.; Kiefer, R.; Weimann, G. | Conference Paper |
| 2000 | 2 µm room-temperature diode lasers for Co(2)-detection
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.; Beyer, T.; Lambrecht, A. | Conference Paper |
| 2000 | 267-W cw AlGaAs/GaInAs diode laser bars
Braunstein, J.; Mikulla, M.; Kiefer, R.; Walther, M.; Jandeleit, J.; Brandenburg, W.; Loosen, P.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2000 | 40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2000 | Electrical Characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 µm range
Bürkle, L.; Fuchs, F.; Kiefer, R.; Pletschen, W.; Sah, R.E.; Schmitz, J. | Conference Paper |
| 2000 | Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K. | Conference Paper |
| 2000 | Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M.; Serries, D.; Herres, N.; Fuchs, F.; Kiefer, R.; Winkler, K.; Bachem, K.-H.; Wagner, J. | Conference Paper |
| 2000 | High-power diode laser bars >250 W
Mikulla, M.; Walther, M.; Kiefer, R.; Jandeleit, J.; Brandenburg, P.; Loosen, P.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2000 | Improved high-temperature operation of InGaAs/AlGaAs high-power quantum well lasers by short-period superlattice barriers
Wiedmann, N.; Jandeleit, J.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Poprawe, R.; Weimann, G. | Conference Paper |
| 2000 | Room temperature cw operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 µm wavelength range
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J. | Conference Paper |
| 2000 | Room-temperature cw Operation of GaInAsSb/AlGaAsSb Quantum Well Diode Lasers emitting beyond 2 µm
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J. | Conference Paper |
| 2000 | Room-temperature low-threshold low-loss continous-wave operation of 2.26 µm GaInAsSb/AlGaAsSb quantum-well laser diodes
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J. | Journal Article |
| 2000 | Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G. | Journal Article |
| 1999 | 25-W CW high-brightness tapered semiconductor laser-array
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Journal Article |
| 1999 | Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G. | Journal Article |
| 1999 | Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
Daleiden, J.; Kiefer, R.; Klußmann, S.; Kunzer, M.; Manz, C.; Walther, M.; Braunstein, J.; Weimann, G. | Journal Article |
| 1999 | Effect of aging on stress in silicon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition technique
Sah, R.E.; Baumann, H.; Serries, D.; Kiefer, R.; Braunstein, J. | Conference Paper |
| 1999 | High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G. | Conference Paper |
| 1999 | High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Moritz, R.; Müller, S.; Sah, R.E.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1999 | Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J. | Journal Article |
| 1999 | Stability of the beam quality of 0.98 mu m InGaAlAs tapered laser oscillators
Schmitt, A.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1998 | 20 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1998 | High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
Mikulla, M.; Chazan, P.; Schmitt, A.; Morgott, S.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Journal Article |
| 1998 | High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm
Morgott, S.; Chazan, P.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Journal Article |
| 1998 | Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain) epitaxial layer structures
Mikulla, M.; Schmitt, A.; Chazan, P.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1997 | Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes
Czotscher, K.; Weisser, S.; Länge, R.; Benz, W.; Burkhard, H.; Hillmer, H.; Steinhagen, F.; Kiefer, R.; Lösch, R.; Pletschen, W.; Walcher, H.; Walther, M.; Rosenzweig, J. | Conference Paper |
| 1997 | ECR-plasma deposited oxygen-free SiN(x) films for low- and high-reflectivity coatings for GaAs based devices
Sah, R.E.; Weimar, U.; Baumann, H.; Wagner, J.; Kiefer, R.; Müller, S. | Conference Paper |
| 1997 | Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
Chazan, P.; Morgott, S.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Moritz, R.; Daleiden, J.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1992 | In-plane switching of nematic liquid crystals.
Kiefer, R.; Weber, B.; Windscheid, F.; Baur, G. | Conference Paper |
| 1990 | Density studies on various smectic liquid crystals
Kiefer, R.; Baur, G. | Journal Article |
| 1990 | The dependence of volumetric properties on the molecular composition of nematic liquid crystals.
Kiefer, R.; Baur, G. | Journal Article |
| 1989 | Electrooptical behaviour of liquid crystalline side chain copolymers.
Kiefer, R.; Windscheid, F.; Baur, G. | Conference Paper |
| 1989 | Fast switching films of nematic side chain copolymers
Kiefer, R.; Baur, G. | Journal Article |
| 1989 | Molecular biaxiality in nematic liquid crystals as studied by infrared dichroism.
Kiefer, R.; Baur, G. | Journal Article |
| 1988 | Density studies on various smectic liquid crystals
Kiefer, R.; Baur, G. | Conference Paper |
| 1988 | Fast switching films of nematic side chain copolymers
Kiefer, R.; Baur, G. | Conference Paper |
| 1987 | Dilatometric studies of some smectic liquid crystals
Kiefer, R.; Baur, G. | Conference Paper |
| 1986 | Fluessigkristallmaterialien und elektrooptische Effekte fuer hochinformative Displays
Baur, G.; Stieb, A.; Fehrenbach, W.; Ganser, M; Grosse, H.; Kiefer, R.; Staudacher, B.; Windscheid, F. | Book |
| 1986 | Orientated ordering of dyes in the glassy state of liquid-crystalline side group polymers
Baur, G.; Kiefer, R.; Windscheid, F.; Ringsdorf, H.; Schmidt, H.-W. | Journal Article |
| 1985 | Phase behaviour of dye-containing liquid crystalline copolymers and their mixtures with low molecular weight liquid crystalls
Ringsdorf, H.; Schmidt, H.-W.; Baur, G.; Kiefer, R. | Book Article |
| 1980 | Advances in computer reconstruction of acoustical holography
Schmitz, V.; Kiefer, R.; Schäfer, G. | Book Article |
| 1980 | Fast recording and numerical reconstruction of holograms
Kiefer, R.; Schmitz, V.; Wendel, H. | Conference Paper |
| 1980 | Ultrasonic holography and focussing probes
Wuestenberg, H.; Kiefer, R.; Fischer, E. | Book Article |
| 1980 | Zur numerischen Rekonstruktion von Ultraschallhologrammen
Kiefer, R.; Wosnitza, M.; Schmitz, V.; Langenberg, K.-J. | Book Article |
| 1979 | Recent developments in ultrasonic holography. Paper 4F-1
Kiefer, R.; Wosnitza, M.; Grosser, H.; Schmitz, V. | Conference Paper |