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| 2018 | Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations
Künneth, C.; Kölbl, S.; Wagner, H.E.; Häublein, V.; Kersch, A.; Alt, H.C. | Journal Article |
| 2016 | Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T. | Conference Paper |
| 2015 | Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T. | Conference Paper |
| 2015 | Ferroelectricity and antiferroelectricity of doped thin HfO2-based films
Park, M.H.; Lee, Y.H.; Kim, H.J.; Kim, Y.J.; Moon, T.; Do Kim, K.; Müller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T.; Hwang, C.S. | Journal Article |
| 2015 | Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T. | Journal Article |
| 2013 | Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T. | Conference Paper |
| 2012 | Role of defect relaxation for trap-assisted tunneling in high-K thin films
Jegert, G.; Popescu, D.; Lugli, P.; Häufel, M.J.; Weinreich, W.; Kersch, A. | Journal Article |
| 2011 | Monte Carlo simulation of leakage currents in TiN/ZrO2/TiN capacitors
Jegert, G.; Kersch, A.; Weinreich, W.; Lugli, P. | Journal Article |
| 2011 | Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness
Jegert, G.; Kersch, A.; Weinreich, W.; Lugli, P. | Journal Article |
| 2010 | Modeling of leakage currents in high-k dielectrics: Three-dimensional approach via kinetic Monte Carlo
Jegert, G.; Kersch, A.; Weinreich, W.; Schröder, U.; Lugli, P. | Journal Article |
| 2009 | Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics
Schroeder, U.; Weinreich, W.; Erben, E.; Mueller, J.; Wilde, L.; Heitmann, J.; Agaiby, R.; Zhou, D.; Jegert, G.; Kersch, A. | Conference Paper |
| 1995 | Modeling the wafer temperature in a LPCVD furnace
Kersch, A.; Schäfer, M. | Conference Paper |