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| 2011 | Modellbasierte Prozess- und Systemgestaltung für die Innovationsbeschleunigung
Damerau, T.; Kaufmann, U.; Knothe, T.; Stark, R.; Ulbrich, A. | Journal Article |
| 2008 | Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J. | Conference Paper, Journal Article |
| 2008 | Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J. | Journal Article |
| 2007 | Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J. | Journal Article |
| 2007 | Meta-modelling for interoperability in product design
Krause, F.-L.; Kaufmann, U. | Journal Article |
| 2007 | Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes
Kunzer, M.; Kaufmann, U.; Köhler, K.; Leancu, C.-C.; Liu, S.; Wagner, J. | Journal Article |
| 2007 | Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J. | Journal Article |
| 2007 | VIP: The video image processing framework based on the MIRO middleware
Utz, H.; Mayer, G.; Kaufmann, U.; Kraetzschmar, G. | Book Article |
| 2006 | VIP - A framework-based approach to robot vision
Utz, H.; Kaufmann, U.; Mayer, G.; Kraetzschmar, G.K. | Journal Article |
| 2004 | III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J. | Journal Article |
| 2002 | (AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M. | Conference Paper |
| 2002 | Ergebnisse und Perspektiven des iViP-Projektes
Krause, F.-L.; Baumann, R.; Böttge, U.; Jansen, H.; Kaufmann, U. | Conference Paper |
| 2002 | Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M. | Journal Article |
| 2001 | Funktionsorientiertes Entwerfen
Baumann, R.; Kaufmann, U.; Leemhuis, H. | Book Article |
| 2001 | Innovationspotentiale in der Produktentstehung - durchgängig digitale Prozesse mittels integrierter Virtueller Produktentstehung (iViP)
Krause, F.-L.; Baumann, R.; Jansen, H.; Kaufmann, U. | Conference Paper |
| 2001 | Innovationspotenziale in der Produktentstehung - durchgänig digitale Prozesse mittels integrierter Virtueller Produktentstehung (iViP)
Krause, F.-L.; Baumann, R.; Jansen, H.; Kaufmann, U. | Journal Article |
| 2001 | Integrierte Virtuelle Produktentstehung (iViP)
Krause, F.-L.; Baumann, R.; Jansen, H.; Kaufmann, U.; Ziebeil, P. | Book Article |
| 2001 | Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M. | Journal Article |
| 2000 | Erfolgreicher Start des ersten "Innovationsforum Virtuelle Produktentstehung" in Berlin
Krause, F.-L.; Jansen, H.; Kaufmann, U.; Ziebeil, P. | Journal Article |
| 2000 | Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K. | Conference Paper |
| 2000 | Hole conductivity and compensation in epitaxial GaN:Mg layers
Kaufmann, U.; Schlotter, P.; Obloh, H.; Köhler, K.; Maier, M. | Journal Article |
| 2000 | Innovative Technologien und Systeme für die integrierte, virtuelle Produktentstehung
Krause, F.-L.; Jansen, H.; Kaufmann, U.; Ziebeil, P. | Journal Article |
| 2000 | iViP - eine Initiative für die integrierte virtuelle Produktentstehung
Krause, F.-L.; Jansen, H.; Kaufmann, U.; Ziebeil, P. | Journal Article, Conference Paper |
| 2000 | iViP - Perspektiven für die integrierte, virtuelle Produktentstehung
Krause, F.-L.; Jansen, H.; Kaufmann, U.; Ziebeil, P. | Journal Article |
| 1999 | Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U. | Journal Article |
| 1999 | Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J. | Book Article |
| 1999 | In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Manz, C.; Kunzer, M.; Obloh, H.; Ramakrishnan, A.; Kaufmann, U. | Journal Article |
| 1999 | Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B. | Journal Article |
| 1998 | Ein Assistenzsystem für die frühen Phasen der Produktentwicklung
Specht, D.; Kaufmann, U. | Journal Article |
| 1998 | Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures
Kunzer, M.; Kaufmann, U.; Maier, M.; Obloh, H. | Conference Paper |
| 1998 | Modules and tools for virtual product realization
Krause, F.-L.; Jansen, H.; Kaufmann, U.; Neumann, J.; Schumann, G.; Ziebeil, P. | Conference Paper |
| 1998 | Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P. | Journal Article |
| 1997 | Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H. | Journal Article |
| 1997 | Identification of multivalent molybdenum impurities in SiC crystals
Baur, J.; Kunzer, M.; Dombrowski, K.F.; Kaufmann, U.; Schneider, J.; Baranov, P.G.; Mokhov, E.N. | Conference Paper |
| 1997 | Ionized donor bound excitons in GaN
Santic, B.; Merz, C.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K. | Journal Article |
| 1997 | Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I. | Journal Article |
| 1997 | Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Journal Article |
| 1997 | Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Conference Paper |
| 1997 | Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H. | Conference Paper |
| 1997 | Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H. | Journal Article |
| 1996 | Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H. | Journal Article |
| 1996 | Identification of molybdenum in 6H-SiC by magnetic resonance techniques
Dombrowski, K.F.; Kunzer, M.; Kaufmann, U.; Schneider, J. | Journal Article |
| 1996 | Identification of optically and electrically active molybdenum trace imputities in 6H-SiC substrates
Kunzer, M.; Dombrowski, K.F.; Fuchs, F.; Kaufmann, U.; Schneider, J.; Baranov, P.G.; Mokhov, E.N. | Conference Paper |
| 1996 | Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD
Kaufmann, U.; Kunzer, M.; Merz, C.; Akasaki, I.; Amano, H. | Conference Paper |
| 1995 | Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U. | Journal Article |
| 1995 | Characterization of residual transition metal ions in GaN and AlN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K. | Conference Paper |
| 1995 | Determination of the GaN/AlN band discontinuities via the '-/0' acceptor level of iron
Baur, J.; Kunzer, M.; Maier, K.; Kaufmann, U.; Schneider, J. | Journal Article |
| 1995 | Magnetic circular dichroism and electron spin resonance of the A- acceptor state of Vanadium, V3+, in 6H-SiC
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J. | Journal Article |
| 1995 | Photoluminescence of residual transition metal impurities in GaN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J. | Journal Article |
| 1994 | Bistability of the Te donor in AlSb:Te bulk crystals
Jost, W.; Kunzer, M.; Kaufmann, U.; Bender, H. | Journal Article |
| 1994 | Deep donor state of vanadium in cubic silicon carbide -3C-SiC-
Dombrowski, K.F.; Kaufmann, U.; Kunzer, M.; Maier, K.; Schneider, J.; Shields, V.B.; Spencer, M.G. | Journal Article |
| 1994 | Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J. | Journal Article |
| 1994 | Group-V antisite defects, VGa, in GaAs.
Kaufmann, U. | Journal Article |
| 1994 | Identification of the neutral V4+ impurity in cubic 3C-SiC by electron-spin resonance and optically detected magnetic resonance
Dombrowski, K.F.; Kaufmann, U.; Kunzer, M.; Maier, K.; Schneider, J.; Shields, V.B.; Spencer, M.G. | Journal Article |
| 1994 | Infrared luminescence of residual iron deep level acceptors in gallium nitride -GaN- epitaxial layers.
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K. | Journal Article |
| 1994 | Iron acceptors in gallium nitride -GaN-.
Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Monemar, B.; Akasaki, I.; Amano, H. | Journal Article |
| 1994 | ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H. | Journal Article |
| 1993 | Identification of the BiGa heteroantisite defect in GaAs:Bi
Kunzer, M.; Jost, W.; Kaufmann, U.; Hobgood, H.M.; Thomas, R.N. | Journal Article |
| 1993 | Magnetic circular dichroism and site-selective optically detected magnetic resonance of the deep amphoteric vanadium impurity in 6H-SiC
Kunzer, M.; Müller, H.D.; Kaufmann, U. | Journal Article |
| 1993 | Optically detected magnetic-resonance observation of spin-dependent interdefect electron transfer in the GaP:(V,S) system
Omling, P.; Kveder, B.K.; Meyer, B.K.; Oettinger, K.; Kaufmann, U.; Kordina, O. | Journal Article |
| 1993 | Semantisches Entwerfen in Verbindung mit AutoCAD
Forkel, M.; Wenk, H.-U.; Kaufmann, U. | Journal Article |
| 1992 | AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.
Jost, W.; Kaufmann, U.; Schneider, J.; Köhler, K.; Alt, H.C.; Kunzer, M. | Journal Article |
| 1992 | Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M. | Journal Article |
| 1992 | EPR observation of a deep center with Ap1 electron configuration in GaAs.
Kaufmann, U.; Baeumler, M.; Hendorfer, G. | Journal Article |
| 1992 | Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb
Omling, P.; Hofmann, D.M.; Baeumler, M.; Kaufmann, U.; Kunzer, M. | Journal Article |
| 1992 | Magnetic resonance of x-point shallow donors in AlSb-Te bulk crystals and AlSb MBE layers.
Wilkening, W.; Kaufmann, U.; Schneider, J.; Schönherr, E.; Glaser, E.R.; Shanabrook, B.V.; Waterman, J.R.; Wagner, R.J. | Journal Article |
| 1992 | Spin-polarized excitons in pseudomorphic, strained In(0.16)Ga(0.84)As/Al(0.29)Ga(0.71)As quantum wells on a GaAs substrate
Kunzer, M.; Hendorfer, G.; Kaufmann, U.; Köhler, K. | Journal Article |
| 1992 | Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U. | Conference Paper |
| 1991 | Electron paramagnetic resonance of the shallow Sn donor in GaAs/Al0.68Ga0.32As-Sn heterostructures.
Wilkening, W.; Bauser, E.; Kaufmann, U. | Journal Article |
| 1991 | Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs
Hendorfer, G.; Kaufmann, U. | Journal Article |
| 1991 | Negative-U, off-center OAs in GaAs and its relation to the EL3 level
Klausmann, E.; Schneider, J.; Kaufmann, U.; Alt, H.C. | Journal Article |
| 1991 | Realistisch sind etwa zwei Jahre. Schritte zur Einführung rechnergestützter Qualitätssicherung -CAQ-
Kaufmann, U.; Pfeifer, T.; Schmidt, N. | Journal Article |
| 1990 | Electron paramagnetic resonance of the shallow Si donor in indirect GaAs/AlxGa1-xAs heterostructures.
Wilkening, W.; Kaufmann, U. | Conference Paper |
| 1990 | The role of deep acceptors for the compensation of undoped SI GaAs
Baeumler, M.; Mooney, P.; Kaufmann, U.; Wagner, J. | Conference Paper |
| 1990 | Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/Al(x)Ga(1-x)As:Si heterostructures
Wilkening, W.; Mooney, P.M.; Kuech, T.F.; Kaufmann, U. | Journal Article |
| 1989 | An A centre in CdTe
Brunthaler, G.; Jantsch, W.; Schneider, J.; Kaufmann, U. | Journal Article |
| 1989 | Determination of the FR3 acceptor level by direct excitation of the FR3 EPR in undoped semiinsulating GaAs.
Baeumler, M.; Mooney, P.M.; Kaufmann, U. | Journal Article |
| 1989 | Electron parametric resonance identification of the SbGa heteroantisite defect in GaAs:Sb
Baeumler, M.; Schneider, J.; Mitchel, W.C.; Yu, P.W.; Kaufmann, U. | Journal Article |
| 1989 | Electron parametric-resonance measurements of Si-donor-related levels in Al(x)Ga(1-x)As
Mooney, P.M.; Wilkening, W.; Kuech, T.F.; Kaufmann, U. | Journal Article |
| 1989 | Magnetic circular dichroism investigation on the neutral and the ionized manganese acceptor in GaAs.
Baeumler, M.; Schneider, J.; Kaufmann, U.; Meyer, B. | Journal Article |
| 1989 | Optical properties of the SbGa heteroantisite defect in GaAs:Sb
Baeumler, M.; Fuchs, F.; Kaufmann, U. | Journal Article |
| 1989 | The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs.
Kaufmann, U. | Book Article |
| 1988 | Below band-gap photoresponse of undoped semi-insulating GaAs
Kaufmann, U. | Conference Paper |
| 1988 | Origin of the magnetic-circular-dichroism absorption of undoped as-grown GaAs
Kaufmann, U.; Windscheif, J. | Journal Article |
| 1988 | Photo response of the EL2 absorption band and of the As plus Ga ESR Signal in GaAs.
Dischler, B.; Kaufmann, U. | Journal Article |
| 1988 | A simple theoretical model for the magnetic circular dichroism absorption of undoped as-grown GaAs
Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1987 | Electronic structure of the neutral manganese acceptor in gallium arsenide
Schneider, J.; Wilkening, W.; Baeumler, M.; Köhl, F.; Kaufmann, U. | Journal Article |
| 1987 | Photoresponse of the FR3 electron-spin-resonance signal in GaAs
Wilkening, W.; Baeumler, M.; Kaufmann, U. | Journal Article |
| 1986 | Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J. | Book |
| 1986 | Infrared investigations of persistent carriers, photo-generated during EL2 bleaching in GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U. | Conference Paper |
| 1986 | New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1986 | New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Book Article |
| 1986 | Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1986 | Photoresponse of the EL2 absorption in undoped semi-insulating GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U. | Journal Article |
| 1986 | Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J. | Journal Article |
| 1986 | Spectrally resolved photo-response of the EL2 absorption in undoped semi-insulating GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U. | Book Article |
| 1985 | As(sub)Ga - Induced dichroism in GaAs
Kaufmann, U. | Journal Article |
| 1985 | Electron-spin-resonance analysis of the deep donors lead, tin, and germanium in CdTe
Schneider, J.; Brunthaler, G.; Jantsch, W.; Kaufmann, U. | Journal Article |
| 1985 | Near infrared transmission imagign of spatial inhomogeneities in GaAs slices. A comparative study of different techniques
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1985 | New quantitative line scanning technique for homogeneity assessment of semi-insulating GaAs wafers
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1985 | Photo-EPR and spatially resolved EPR of AsBa in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1985 | Photoresponse of the As tief Ga antisite defect in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1985 | Zeeman analysis of the ytterbium luminescence in indium phosphide
Schneider, J.; Aszodi, G.; Weber, J.; Pu-lin, L.; Kaufmann, U.; Uihlein, C.; Ennen, H.; Windscheif, J. | Journal Article |
| 1985 | Zeeman spectroscopy of the vanadium luminescence in GaP and GaAs
Aszodi, G.; Kaufmann, U. | Journal Article |
| 1984 | Antisite Defekte in III-V-Halbleitern
Aschmoneit, E.K.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1984 | Concentration and thermal stability of As tief Ga in GaAs - Correlation with EL2
Baeumler, M.; Schneider, J.; Koehl, F.; Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1984 | Electrical and optical properties of the neutral nickel acceptor in gallium phosphide.
Peaker, A.R.; Woerner, R.; Hamilton, B.; Grimmeiss, H.G.; Kaufmann, U.; Wang, Z.-G. | Journal Article |
| 1984 | Electron spin resonance identification of isolated Fe hoch 3+ in CdTe.
Brunthaler, G.; Schneider, J.; Kaufmann, U. | Journal Article |
| 1984 | Identification of the isolated deep Ni acceptor in CdTe and ZnTe - comparison with isomorphous systems
Brunthaler, G.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1983 | Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs
Schneider, J.; Kimura, T.; Kaufmann, U.; Ennen, H.; Windscheif, J. | Journal Article |
| 1983 | Endor investigation of Ni 3+ in GaP
Schneider, J.; Ueda, Y.; Niklas, J.R.; Spaeth, J.M.; Kaufmann, U. | Journal Article |
| 1983 | Rare earth activated luminescence in InP, GaP and GaAs.
Pomrenke, G.; Schneider, J.; Axmann, A.; Kaufmann, U.; Ennen, H.; Windscheif, J. | Journal Article |
| 1982 | Electron spin resonance of As Ga antisite defects in fast neutronirradiated GaAs
Woerner, R.; Schneider, J.; Kaufmann, U. | Journal Article |
| 1982 | Identification of As
Weber, E.R.; Wosinski, T.; Kaufmann, U.; lWindscheif, J.; Ennen, H. | Journal Article |
| 1982 | Neutron-transmutation doping of GaAs - as studied by ESR.
Schneider, J.; Kaufmann, U. | Journal Article |
| 1982 | Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U. | Journal Article |
| 1982 | Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H. | Journal Article |
| 1976 | Elektronen - Spin - Resonanz und optische Absorption von Defekten in ternären Chalkopyrit Verbindungen
Kaufmann, U. | Dissertation |