Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Conference Paper
2011Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen
Conference Paper
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Journal Article
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Journal Article, Conference Paper
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Conference Paper
2010Evaluation of CMOS architectures below 50 nm gate length by numerical simulations
Kampen, C.
Dissertation
2010FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Journal Article, Conference Paper
2010Hierarchischer Ansatz für die Monte-Carlo-Simulation komplexer Mixed-Signal-Schaltungen
Jancke, R.; Kampen, C.; Kilic, O.; Lorenz, J.
Conference Paper
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Conference Paper
2010Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Conference Paper
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Conference Paper
2009Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.
Conference Paper
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Journal Article
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Journal Article
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Conference Paper
2008A simulation study on the impact of lithographic process variations on CMOS device performance
Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.
Conference Paper
2007Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Abstract