Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000Complementary HFETs on GaAs with 0.2µm gate length
Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G.
Conference Paper
199940 Gbit/s/GHz clock recovery and frequency multiplying AlGaAs/GaAs-HEMT-IC using injection-synchronised narrowband ring-VCOs and auxiliary PLLs
Wang, Z.-G.; Thiede, A.; Schlechtweg, M.; Lienhart, H.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T.
Journal Article
1999Isi mitigation using decision-feedback loop demonstrated with PMD distorted 10Gbit/s signals
Moller, L.; Thiede, A.; Chandrasekhar, S.; Benz, W.; Lang, M.; Jakobus, T.; Schlechtweg, M.
Journal Article
199820-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
199840 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T.
Journal Article
199840 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Conference Paper
199840 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
19985 Gsample/s track-hold and 3 Gsample/s quasi-sample-hold ICs
Lao, Z.; Thiede, A.; Lienhart, H.; Schlechtweg, M.; Bronner, W.; Hornung, J.; Hülsmann, A.; Jakobus, T.
Conference Paper
199855 GHz dynamic frequency divider IC
Lao, Z.; Thiede, A.; Hornung, J.; Schlechtweg, M.; Lienhart, H.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Seibel, J.; Sedler, M.; Kaufel, G.
Journal Article
1998A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Lang, M.; Wang, Z.-G.; Thiede, A.; Lienhart, H.; Jakobus, T.; Bronner, W.; Hornung, J.; Hülsmann, A.
Conference Paper
1998Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology
Bushehri, E.; Thiede, A.; Staroselsky, V.; Timochenkov, V.; Lienhart, H.; Bratov, V.; Jakobus, T.
Journal Article
1998GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m
Leven, A.; Baeyens, Y.; Benz, W.; Bronner, W.; Hülsmann, A.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Reuter, R.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
1998LSI capability demonstration of an 0.15 mu m - 0.3 mu m GaAs HEMT and PM-HEMT 3 level metallization E/D-Technology for mixed signal circuits
Thiede, A.; Lao, Z.; Lienhart, H.; Sedler, M.; Seibel, J.; Hornung, J.; Schneider, J.; Kaufel, G.; Bronner, W.; Köhler, K.; Jakobus, T.; Schlechtweg, M.
Conference Paper
1998Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Journal Article
1998Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Lao, Z.; Hurm, V.; Thiede, A.; Berroth, M.; Ludwig, M.; Lienhart, H.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Kaufel, G.; Jakobus, T.
Journal Article
1998Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
Bronner, W.; Benz, W.; Dammann, M.; Ganser, P.; Grün, N.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Olander, E.
Conference Paper
1998Very compact 60 GHz high efficiency power amplifier in coplanar technology
Marsetz, W.; Osorio, R.; Massler, H.; Neumann, M.; Rüdiger, J.; Jakobus, T.; Schlechtweg, M.
Conference Paper
199710 Gb/s single-chip data regeneration with an injection
Wang, Z.-G.; Thiede, A.; Rieger-Motzer, M.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T.; Schlechtweg, M.
Conference Paper
199710 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1997Compact integrated coplanar T/R-modules for automotive applications
Verweyen, L.; Bangert, A.; Massler, H.; Fink, T.; Neumann, M.; Osorio, R.; Krems, T.; Jakobus, T.; Haydl, W.H.; Schlechtweg, M.
Conference Paper
1997Compact monolithic coplanar 94 GHZ front ends
Haydl, W.H.; Verweyen, L.; Jakobus, T.; Neumann, M.; Tessmann, A.; Krems, T.; Schlechtweg, M.; Reinert, W.; Massler, H.; Rüdiger, J.; Bronner, W.; Hülsmann, A.; Fink, T.
Conference Paper
1997DC 30 GHz bandwidth and 36 dB gain limiting amplifier for 40 Gbit/s optical transmission systems
Lao, Z.; Bosch, R.; Hurm, V.; Thiede, A.; Schlechtweg, M.; Bronner, W.; Hornung, J.; Hülsmann, A.; Jakobus, T.
Journal Article
1997HEMT circuits for signal/data processing
Berroth, M.; Hurm, V.; Lang, M.; Lao, Z.; Thiede, A.; Wang, Z.-G.; Bangert, A.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Jakobus, T.
Journal Article
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Conference Paper
1997Multifunctional integration using HEMT technology
Schlechtweg, M.; Verweyen, L.; Haydl, W.; Thiede, A.; Lang, M.; Leber, P.; Hurm, V.; Jakobus, T.; Bronner, W.; Hülsmann, A.; Hornung, J.; Wang, Z.
Conference Paper
1996Metal-non-metal transition at the crossover from antidots to quantum dots
Lütjering, G.; Weiss, D.; Tank, R.W.; Klitzing, K. von; Hülsmann, A.; Jakobus, T.; Köhler, K.
Journal Article
1995Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1995Monolithic integrated optoelectronic circuits for optical links
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
19940.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Journal Article
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Conference Paper
1993Fabrication and performance of 1-dim MODFETs.
Hülsmann, A.; Roman, P.; Braunstein, J.; Kaufel, G.; Köhler, K.; Jakobus, T.
Journal Article
1993Stability of an AlGaAs/GaAs/AlGaAsE/D-HEMT process with double pulse doping
Jakobus, T.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Landsberg, B.; Raynor, B.; Schneider, J.; Grün, N.; Windscheif, J.; Berroth, M.; Hornung, J.
Conference Paper
1992Mushroom shaped gates in a dry etched recessed gate process
Kaufel, G.; Hülsmann, A.; Raynor, B.; Hofmann, P.; Schneider, J.; Hornung, J.; Jakobus, T.; Berroth, M.; Köhler, K.
Conference Paper
1991GaAs/AlGaAs HEMT's with sub 0.5 mym gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic -DCFL-
Hülsmann, A.; Kaufel, G.; Raynor, B.; Glorer, K.H.; Olander, E.; Weismann, B.; Schneider, J.; Jakobus, T.; Koehler, K.
Conference Paper
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Conference Paper
1990E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Köhler, K.
Journal Article
1990Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K.
Conference Paper
1982Baron ion implantation in Hg(1-x)Cd(x)Te
Baars, J.; Hurrle, A.; Rothemund, W.; Fritzsche, C.R.; Jakobus, T.
Journal Article