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| 2009 | Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si
Kim, J.-H.; Ignatova, V.A.; Weisheit, M. | Journal Article, Conference Paper |
| 2009 | Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U. | Journal Article |
| 2009 | Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si
Kim, J.-H.; Ignatova, V.A.; Kücher, P.; Weisheit, M.; Zschech, E. | Journal Article |
| 2008 | Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor
Kim, J.-H.; Ignatova, V.A.; Heitmann, J.; Oberbeck, L. | Journal Article |
| 2008 | Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor
Kim, J.-H.; Ignatova, V.A.; Kücher, P.; Heitmann, J.; Oberbeck, L.; Schröder, U. | Journal Article |
| 2008 | Wet etching study of La0.67(Sr0.5Ca0.5)(0.33)MnO3 films on silicon substrates
Kim, J.-H.; Grishin, A.M.; Ignatova, V.A. | Journal Article |
| 2007 | Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P. | Poster |