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| 2016 | Advanced building blocks for (sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Moschetti, G.; Rösch, M.; Weber, R.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Rosenzweig, J.; Ambacher, O. | Conference Paper |
| 2014 | A 200 GHz medium power amplifier MMIC in cascode metamorphic HEMT technology
Campos-Roca, Y.; Tessmann, A.; Amado-Rey, A.B.; Wagner, S.; Massler, H.; Hurm, V.; Leuther, A. | Journal Article |
| 2014 | 243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.-P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T. | Journal Article, Conference Paper |
| 2014 | A 600 GHz low-noise amplifier module
Tessmann, A.; Leuther, A.; Massler, H.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.P.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2014 | A broadband 220-320 GHz medium power amplifier module
Tessmann, A.; Leuther, A.; Hurm, V.; Massler, H.; Wagner, S.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.-P.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2013 | A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions
Hurm, V.; Weber, R.; Tessmann, A.; Massler, H.; Leuther, A.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T. | Journal Article |
| 2013 | A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers
Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T. | Conference Paper |
| 2013 | Cost-efficient high-speed components for 100 gigabit ethernet transmission on one wavelength only: Results of the HECTO project
Derksen, R.H.; Westergren, U.; Chacinski, M.; Schubert, C.; Bach, H.-G.; Driad, R.; Hurm, V.; Makon, R.E.; Li, J.; Steffan, A.G. | Journal Article |
| 2013 | A G-band cascode MHEMT medium power amplifier
Campos-Roca, Y.; Tessmann, A.; Hurm, V.; Massler, H.; Seelmann-Eggebert, M.; Leuther, A. | Conference Paper |
| 2013 | Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
Tessmann, A.; Schlechtweg, M.; Bruch, D.; Lewark, U.J.; Leuther, A.; Massler, H.; Wagner, S.; Seelmann-Eggebert, M.; Hurm, V.; Aidam, R.; Kallfass, I.; Ambacher, O. | Conference Paper |
| 2012 | GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500 - 750 GHz)
Hurm, V.; Tessmann, A.; Massler, H.; Leuther, A.; Riessle, M.; Zink, M.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2012 | GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500-750 GHz)
Hurm, V.; Tessmann, A.; Massler, H.; Leuther, A.; Riessle, M.; Zink, M.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2012 | An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology
Weber, R.; Hurm, V.; Massler, H.; Weissbrodt, E.; Tessmann, A.; Leuther, A.; Nähri, T.; Kallfass, I. | Conference Paper |
| 2011 | 100 - 112 Gbit/s complete ETDM systems based on monolithically integrated transmitter and receiver modules
Ke, W.; Jie, L.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Popov, S.; Jacobsen, G.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.; Zhuo, L.; Friberg, A. | Journal Article |
| 2011 | InP DHBT-based IC technology for 100-Gb/s ethernet
Driad, R.; Rosenzweig, J.; Makon, R.E.; Lösch, R.; Hurm, V.; Walcher, H.; Schlechtweg, M. | Journal Article |
| 2011 | Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz
Tessmann, A.; Leuther, A.; Hurm, V.; Kallfass, I.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Lösch, R.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O. | Journal Article |
| 2011 | Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Hurm, V.; Massler, H.; Riessle, M.; Lösch, R.; Ambacher, O. | Conference Paper |
| 2011 | Ultra-high-speed transmitter and receiver ICs for 100 Gbit/s ethernet using InP DHBTs
Makon, R.E.; Driad, R.; Rosenzweig, J.; Hurm, V.; Walcher, H.; Schlechtweg, M.; Ambacher, O.; Schubert, C. | Conference Paper |
| 2010 | 100 Gb/s complete ETDM system based on monolithically integrated transmitter and receiver modules
Wang, K.; Li, J.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Popov, S.; Jacobsen, G.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G. | Conference Paper |
| 2010 | 100 Gb/s ETDM transmitter module
Chacinski, M.; Westergren, U.; Stoltz, B.; Driad, R.; Makon, R.E.; Hurm, V.; Steffan, A.G. | Journal Article |
| 2010 | 112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE
Li, J.; Schubert, C.; Derksen, R.H.; Makon, R.E.; Hurm, V.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Bach, H.-G.; Mekonnen, G.G.; Steffan, A.G.; Driad, R.; Walcher, H.; Rosenzweig, J. | Conference Paper |
| 2010 | Advanced metamorphic HEMT submillimeter-wave monolithic integrated circuits and modules up to 320 GHz
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Kallfass, I.; Hurm, V.; Massler, H.; Rosenzweig, J.; Zink, M.; Riessle, M.; Lösch, R. | Conference Paper |
| 2010 | Characterization of a pinTWA photoreceiver in OOK-system experiments up to 112 Gb/s
Schubert, C.; Li, J.; Bach, H.-G.; Mekonnen, G.G.; Makon, R.E.; Derksen, R.H.; Hurm, V.; Djupsjöbacka, A.; Chacinski, M.; Westergren, U.; Steffan, A.G.; Driad, R. | Conference Paper |
| 2010 | High-gain submillimeter-wave mHEMT amplifier MMICs
Tessmann, A.; Leuther, A.; Massler, H.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Lösch, R. | Conference Paper |
| 2010 | Setting the stage for 100GbE serial standard - the HECTO project
Derksen, R.H.; Wang, K.; Li, J.; Djupsjöbacka, A.; Jacobsen, G.; Chacinski, M.; Westergren, U.; Popov, S.; Hurm, V.; Makon, R.E.; Driad, R.; Walcher, H.; Rosenzweig, J.; Steffan, A.G.; Mekonnen, G.G.; Bach, H.-G.; Schubert, C. | Conference Paper |
| 2010 | Transceiver modules utilizing travelling-wave electro-absorption modulator
Chacinski, M.; Westergren, U.; Stoltz, B.; Rosenzweig, J.; Driad, R.; Makon, R.E.; Li, J.; Steffan, A.G.; Hurm, V. | Conference Paper |
| 2009 | A 300 GHz mHEMT amplifier module
Tessmann, A.; Leuther, A.; Hurm, V.; Massler, H.; Zink, M.; Kuri, M.; Riessle, M.; Lösch, R.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2009 | Comparing measurement setups to determine the frequency response of Ge on Si p-i-n photodiodes up to 40 GHz
Klinger, S.; Berroth, M.; Kaschel, M.; Oehme, M.; Kasper, E.; Hurm, V. | Conference Paper |
| 2009 | High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O. | Conference Paper |
| 2009 | High-performance MMICs and high-speed mixed-signal ICs based on III/V HEMT and HBT technology for sensors and communication
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Massler, H.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.; Kuri, M. | Conference Paper |
| 2009 | InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications
Hurm, V.; Makon, R.E.; Driad, R.; Benkhelifa, F.; Lösch, R.; Massler, H.; Riessle, M.; Rosenzweig, J.; Schlechtweg, M.; Tessmann, A.; Walcher, H. | Journal Article |
| 2009 | InP-based DHBT technology for high-speed mixed signal and digital applications
Driad, R.; Makon, R.E.; Hurm, V.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2009 | MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O. | Journal Article |
| 2008 | InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation
Hurm, V.; Benkhelifa, F.; Driad, R.; Lösch, R.; Makon, R.E.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Walcher, H. | Journal Article |
| 2008 | InP DHBT-based ICs for 100 Gbit/s data transmission
Driad, R.; Makon, R.E.; Hurm, V.; Schneider, K.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J. | Conference Paper |
| 2008 | Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar
Tessmann, A.; Kallfass, I.; Leuther, A.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Sommer, R.; Wahlen, A.; Essen, H.; Hurm, V.; Schlechtweg, M.; Ambacher, O. | Journal Article |
| 2008 | Metamorphic HEMT MMICs and Modules for Use in High Bandwidth 220 GHz Radar
Tessmann, A.; Kallfass, I.; Leuther, A.; Kuri, M.; Riessle, M.; Massler, H.; Sommer, R.; Wahlen, A.; Essen, H.; Hurm, V.; Schlechtweg, M.; Ambacher, O. | Journal Article |
| 2007 | Gleichspannungstrenner
Schneider, K.; Hurm, V.; Walcher, H.; Kolbe, R. | Patent |
| 2003 | Hybrid integrated optical receivers for high-speed data transmission
Leich, M.; Hurm, V.; Berger, J.; Dietrich, E.; Sohn, J.; Leuther, A.; Bronner, W.; Köhler, K.; Lösch, R.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2002 | 65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Leich, M.; Hurm, V.; Sohn, J.; Feltgen, T.; Bronner, W.; Köhler, K.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M. | Journal Article |
| 2002 | High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Ludwig, M.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2002 | Large area MSM photodiode array for 0.85µm wavelength 10 Gbit/s per channel parallel optical links
Hurm, V.; Bronner, W.; Benz, W.; Köhler, K.; Kropp, J.-R.; Lösch, R.; Ludwig, M.; Mann, G.; Mikulla, M.; Rosenzweig, J.; Schlechtweg, M.; Walther, M.; Weimann, G. | Journal Article |
| 2002 | Narrow-band photoreceiver at 10 GHz with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Rosenzweig, J.; Schlechtweg, M. | Journal Article |
| 2001 | Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength
Lang, M.; Bronner, W.; Benz, W.; Ludwig, M.; Hurm, V.; Kaufel, G.; Leuther, A.; Rosenzweig, J.; Schlechtweg, M. | Journal Article |
| 2001 | Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance
Leven, A.; Hurm, V.; Reuter, R.; Rosenzweig, J. | Journal Article |
| 2001 | High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2000 | 40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 2000 | Metamorphic Devices
Hülsmann, A.; Benkhelifa, F.; Bronner, W.; Chertouk, M.; Hurm, V.; Köhler, K.; Leuther, A.; Walther, M.; Weimann, G. | Conference Paper |
| 2000 | Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication
Hurm, V.; Leven, A.; Benz, W.; Berking, M.; Bronner, W.; Hülsmann, A.; Köhler, K.; Ludwig, M.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Sohn, J.; Walcher, H.; Weimann, G. | Conference Paper |
| 1999 | 40 Gbit/s high voltage modulator driver in P-HEMT technology
Leich, M.; Ludwig, M.; Hülsmann, A.; Hurm, V.; Steinhagen, F.; Thiede, A.; Schlechtweg, M. | Journal Article |
| 1999 | Millimeter-wave long-wavelength integrated optical receivers grown on GaAs
Baeyens, Y.; Leven, A.; Bronner, W.; Hurm, V.; Reuter, R.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M. | Journal Article |
| 1999 | Monolithic, high transimpedance gain (3.3 k ohm), 40 Gbit/s InP-HBT photoreceiver with differential outputs
Huber, A.; Huber, D.; Morf, T.; Jäckel, H.; Bergamaschi, C.; Hurm, V.; Ludwig, M.; Schlechtweg, M. | Journal Article |
| 1998 | 20-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Journal Article |
| 1998 | 40 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T. | Journal Article |
| 1998 | 40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Conference Paper |
| 1998 | 40 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Journal Article |
| 1998 | GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m
Leven, A.; Baeyens, Y.; Benz, W.; Bronner, W.; Hülsmann, A.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Reuter, R.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
| 1998 | Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M. | Journal Article |
| 1998 | Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Lao, Z.; Hurm, V.; Thiede, A.; Berroth, M.; Ludwig, M.; Lienhart, H.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Kaufel, G.; Jakobus, T. | Journal Article |
| 1998 | Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
Bronner, W.; Benz, W.; Dammann, M.; Ganser, P.; Grün, N.; Hurm, V.; Jakobus, T.; Köhler, K.; Ludwig, M.; Olander, E. | Conference Paper |
| 1997 | 10 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M. | Journal Article |
| 1997 | 20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Windscheif, J. | Journal Article |
| 1997 | 25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Thiede, A.; Bosch, R.; Hofmann, P.; Hülsmann, A.; Moglestue, C.; Köhler, K. | Conference Paper |
| 1997 | 45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
Lao, Z.; Nowotny, U.; Thiede, A.; Hurm, V.; Kaufel, G.; Rieger-Motzer, M.; Bronner, W.; Seibel, J.; Hülsmann, A. | Journal Article |
| 1997 | DC 30 GHz bandwidth and 36 dB gain limiting amplifier for 40 Gbit/s optical transmission systems
Lao, Z.; Bosch, R.; Hurm, V.; Thiede, A.; Schlechtweg, M.; Bronner, W.; Hornung, J.; Hülsmann, A.; Jakobus, T. | Journal Article |
| 1997 | HEMT circuits for signal/data processing
Berroth, M.; Hurm, V.; Lang, M.; Lao, Z.; Thiede, A.; Wang, Z.-G.; Bangert, A.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Jakobus, T. | Journal Article |
| 1997 | High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
Lao, Z.; Thiede, A.; Nowotny, U.; Schlechtweg, M.; Hurm, V.; Bronner, W.; Hornung, J.; Rieger-Motzer, M.; Kaufel, G.; Köhler, K.; Hülsmann, A. | Conference Paper |
| 1997 | High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J. | Conference Paper |
| 1997 | Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S. | Conference Paper |
| 1997 | Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M. | Conference Paper |
| 1997 | Multifunctional integration using HEMT technology
Schlechtweg, M.; Verweyen, L.; Haydl, W.; Thiede, A.; Lang, M.; Leber, P.; Hurm, V.; Jakobus, T.; Bronner, W.; Hülsmann, A.; Hornung, J.; Wang, Z. | Conference Paper |
| 1996 | 10 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J. | Journal Article |
| 1996 | 20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Ludwig, M.; Olander, E.; Raynor, B.; Rosenzweig, J. | Journal Article |
| 1996 | 31 GHz static and 39 GHz dynamic frequency divider ICs using 0,2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Rieger-Motzer, M.; Thiede, A.; Hurm, V.; Sedler, M.; Bronner, W.; Hülsmann, A.; Raynor, B. | Conference Paper |
| 1996 | Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 mu m AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Ludwig, M.; Bronner, W.; Schneider, J. | Journal Article |
| 1996 | A monolithic 24.9 GHz limiting amplifier using 0.2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Rieger-Motzer, M.; Thiede, A.; Bronner, W.; Hülsmann, A.; Raynor, B. | Conference Paper |
| 1995 | 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J. | Journal Article |
| 1995 | 10 Gbit/s monolithic optoelectronic integrated receiver with clock recovery, data decision and 1:4 demultipexer
Wang, Z.-G.; Hurm, V.; Lang, M.; Berroth, M.; Ludwig, M.; Fink, T.; Köhler, K.; Raynor, B. | Conference Paper |
| 1995 | 17 GHz-bandwidth 17dB-gain 0.3 micrometer-HEMT low power limiting amplifier
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1995 | Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G. | Conference Paper |
| 1995 | Monolithic integrated optoelectronic circuits for optical links
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G. | Conference Paper |
| 1995 | Monolithic integration of 1.3-mym InGaAs photodetectors and HEMT electronic circuits on GaAs
Fink, T.; Hurm, V.; Raynor, B.; Köhler, K.; Benz, W.; Ludwig, M. | Conference Paper |
| 1994 | 1.3 mym monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J. | Conference Paper |
| 1994 | 20 Gb/s monolithic integrated clock recovery and data decision
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1993 | 14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver.
Hurm, V.; Ludwig, M.; Rosenzweig, J.; Benz, W.; Berroth, M.; Bosch, R.; Bronner, W.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J. | Journal Article |
| 1992 | 10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Hurm, V.; Lang, M.; Ludwig, G.; Hülsmann, A.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wang, Z.-G.; Wennekers, P. | Conference Paper |
| 1992 | 16 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J. | Journal Article |
| 1992 | Indirect optically controlled pseudomorphic HEMT based MMIC oscillator
Bangert, A.; Benz, W.; Hülsmann, A.; Hurm, V.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Rosenzweig, J. | Conference Paper |
| 1991 | 10 Gbit/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver.
Hurm, V.; Ludwig, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Rosenzweig, J. | Conference Paper |
| 1991 | 10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1991 | A 2.5 ns 8x8-b parallel multiplier using 0.5 mym GaAs/GaAlAs heterostructure field effect transistors
Hurm, V.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K. | Journal Article |
| 1991 | 20 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Lang, M.; Hurm, V.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K. | Journal Article |
| 1991 | 8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Benz, W.; Huelsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K. | Journal Article |
| 1990 | Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K. | Conference Paper |
| 1989 | Frequency dependent CV measurements of GaAs/AlGaAs heterostructures
Hurm, V.; Berroth, M.; Bosch, R. | Conference Paper |
| 1986 | Numerical modelling of double-injection Si - In devices
Hurm, V.; Hornung, J.C.R.; Manck, O. | Journal Article |
| 1985 | Double injection in Si - In devices
Hurm, V.; Hornung, J.C.R.; Manck, O. | Journal Article |