Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2018Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2018Electrical properties of schottky-diodes based on B doped diamond
Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L.
Conference Paper
2018Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.
Journal Article
2017Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2017Monolithically integrated solid-state-circuit-breaker for high power applications
Huerner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2016Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
Hürner, Andreas; Mitlehner, Heinz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Conference Paper
2015Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Conference Paper
2015Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability
Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Conference Paper
2014Experimental analysis of bipolar SiC-devices for future energy distribution systems
Huerner, A.; Mitlehner, H.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2014Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2013Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation
Hürner, A.; Schlegl, T.; Adelmann, B.; Mitlehner, H.; Hellmann, R.; Bauer, A.J.; Frey, L.
Conference Paper
2013Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
Häublein, V.; Temmel, G.; Mitlehner, H.; Rattmann, G.; Strenger, C.; Hürner, A.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2013Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts
Adelmann, B.; Hürner, A.; Schlegel, T.; Bauer, A.J.; Frey, L.; Hellmann, R.
Journal Article
2012Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, T.; Huerner, A.; Bauer, A.J.; Frey, L.
Journal Article