Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Bottom up research and development for a low-voltage three level NPC converter
Benkendorff, B.; Fuchs, F.W.; Friedrich, D.; Hinz, J.; Poech, M.; Kohlmann, K.; Reese, H.; Letas, H.-H.; Weber, C.; Eisele, R.; Mueller, Z.; Berger, M.; Rudzki, J.; Osterwald, F.; Mono, T.
Conference Paper
2010Abscheidung und Charakterisierung metallischer Gateelektroden für zukünftige CMOS-Technologien
Hinz, J.
Dissertation
2010Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Hinz, J.; Bauer, A.J.; Frey, L.
Journal Article
2010Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
Hinz, J.; Bauer, A.J.; Thiede, T.; Fischer, R.A.; Frey, L.
Journal Article
2009Deposition of niobium nitride thin films from Tert-Butylamido-Tris-(Diethylamido)-Niobium by a modified industrial MOCVD reactor
Thiede, T.B.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Barreca, D.; Gasparotto, A.; Fischer, R.A.
Journal Article
2008Evaluation of MOCVD grown niobium nitride films as gate electrode for advanced CMOS technology
Thiede, T.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Fischer, R.A.
Conference Paper
2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article