Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Journal Article
1993Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs
Richards, D.; Schneider, H.; Hendorfer, G.; Maier, M.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M.
Journal Article
1992EPR observation of a deep center with Ap1 electron configuration in GaAs.
Kaufmann, U.; Baeumler, M.; Hendorfer, G.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In(0.16)Ga(0.84)As/Al(0.29)Ga(0.71)As quantum wells on a GaAs substrate
Kunzer, M.; Hendorfer, G.; Kaufmann, U.; Köhler, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U.
Conference Paper
1991G-factor and effective mass anisotropies in pseudomorphic strained layers.
Hendorfer, G.; Schneider, J.
Journal Article
1991Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs
Hendorfer, G.; Kaufmann, U.
Journal Article