Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019State of the Art Packaging
Schletz, Andreas; Endruschat, Achim; Heckel, Thomas
2019A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors
Endruschat, A.; Novak, C.; Gerstner, H.; Heckel, T.; Joffe, C.; März, M.
Journal Article
2018The 2018 GaN power electronics roadmap
Amano, H.; Baines, Y.; Beam, E.; Borga, M.; Bouchet, T.; Chalker, P.R.; Charles, M.; Chen, K.J.; Chowdhury, N.; Chu, R.; Santi, C. de; Souza, M.M. de; Decoutere, S.; Cioccio, L. di; Eckardt, B.; Egawa, T.; Fay, P.; Freedsman, J.J.; Guido, L.; Häberlen, O.; Haynes, G.; Heckel, T.; Hemakumara, D.; Houston, P.; Hu, J.; Hua, M.; Huang, Q.; Huang, A.; Jiang, S.; Kawai, H.; Kinzer, D.; Kuball, M.; Kumar, A.; Lee, K.B.; Li, X.; Marcon, D.; März, M.; McCarthy, R.; Meneghesso, G.; Meneghini, M.; Morvan, E.; Nakajima, A.; Narayanan, E.M.S.; Oliver, S.; Palacios, T.; Piedra, D.; Plissonnier, M.; Reddy, R.; Sun, M.; Thayne, I.; Torres, A.; Trivellin, N.; Unni, V.; Uren, M.J.; Hove, M. van; Wallis, D.J.; Wang, J.; Xie, J.; Yagi, S.; Yang, S.; Youtsey, C.; Yu, R.; Zanoni, E.; Zeltner, S.; Zhang, Y.
Journal Article
2018Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2017Application-related characterization and theoretical potential of wide-bandgap devices
Endruschat, A.; Heckel, T.; Gerstner, H.; Joffe, C.; Eckardt, B.; März, M.
Conference Paper
2017SiC power module loss reduction by PWM gate drive patterns and impedance-optimized gate drive voltages
Gerstner, H.; Heckel, T.; Endruschat, A.; Roßkopf, A.; Eckardt, B.; März, M.
Conference Paper
2016Fundamental efficiency limits in power electronic systems
Heckel, T.; Rettner, C.; Marz, M.
Conference Paper
2016Implementation of simultaneous energy and data transfer in a contactless connector
Trautmann, M.; Joffe, C.; Pflaum, F.; Sanftl, B.; Weigel, R.; Heckel, T.; Koelpin, A.
Conference Paper
2016Inductive high data rate transmission for bearing systems
Ziller, Janina; Draeger, Tobias; Heckel, Thomas
Conference Paper
2016Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications
Ditze, S.; Endruschat, A.; Schriefer, T.; Rosskopf, A.; Heckel, T.
Conference Paper
2016Influence of the junction capacitance of the secondary rectifier diodes on output characteristics in multi-resonant converters
Ditze, S.; Heckel, T.; März, M.
Conference Paper
2016Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability
Krach, Florian; Thielen, Nils; Heckel, Thomas; Bauer, Anton J.; Erlbacher, Tobias; Frey, Lothar
Conference Paper
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Conference Paper
2016Using SiC MOSFET's full potential - Swichting faster than 200 kV/µs
Kreutzer, O.; Heckel, T.; März, M.
Conference Paper
2015Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control
Lorentz, V.R.H.; Schwarz, R.; Heckel, T.; März, M.; Frey, L.
Conference Paper
2015A novel charge based SPICE model for nonlinear device capacitances
Heckel, T.; Frey, L.
Conference Paper
2015SiC MOSFETs in hard-switching bidirectional DC/DC converters
Heckel, T.; Eckardt, B.; März, M.; Frey, L.
Conference Paper
2014Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters
Heckel, T.; Frey, L.; Zeltner, S.
Conference Paper
2014Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper