Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2008Improved optical confinement in 1.55 micrometer InAs/GaInAsP quantum dot lasers grown by MOVPE
Franke, D.; Harde, P.; Kreissl, J.; Möhrle, M.; Rehbein, W.; Künzel, H.; Pohl, U.W.; Bimberg, D.
Conference Paper
200740 Gbit/s directly modulated passive feedback laser with complex-coupled DFB section
Kreissl, J.; Troppenz, U.; Rehbein, W.; Gaertner, T.; Harde, P.; Radziunas, M.
Conference Paper
2007Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55 mu m quantum dot lasers
Franke, D.; Moehrle, M.; Boettcher, J.; Harde, P.; Sigmund, A.; Kuenzel, H.
Journal Article
2007Improved emission wavelength reproducibility of InP-based all MOVPE grown 1.55 micrometer quantum dot lasers
Franke, D.; Harde, P.; Böttcher, J.; Möhrle, M.; Sigmund, A.; Künzel, H.
Conference Paper
2004Planarized selective regrowth of InP:FE by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices
Paraskevopoulos, A.; Franke, D.; Harde, P.; Gouraud, S.; Pallec, M. le; Lelarge, F.; Decobert, J.
Conference Paper
2003Iron doping behaviour in InP grown by LP-MOVPE in the presence of tertiarybutylchloride
Paraskevopoulos, A.; Franke, D.; Harde, P.; Gouraud, S.
Conference Paper
2003Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor
Franke, D.; Sabelfeld, N.; Ebert, W.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Conference Paper
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Conference Paper, Journal Article
2000Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
Kreissl, J.; Moehrle, M.; Sigmund, A.; Bochnia, R.; Harde, P.; Ulrici, W.
Conference Paper
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Conference Paper, Journal Article
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Conference Paper, Journal Article
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Journal Article
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Journal Article
1997Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures
Passenberg, W.; Harde, P.; Paraskevopoulos, A.
Conference Paper
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Conference Paper, Journal Article
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1996Self-aligned, fluxless flip-chip bonding technology for photonic devices
Kuhmann, J.F.; Hensel, H.-J.; Pech, D.; Harde, P.; Bach, H.-G.
Conference Paper
1995In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.
Conference Paper, Journal Article
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Conference Paper
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Journal Article
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Journal Article
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Conference Paper
1993Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth
Passenberg, W.; Harde, P.
Conference Paper
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Conference Paper, Journal Article
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Conference Paper, Journal Article
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Journal Article
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Conference Paper
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Journal Article
1989Assessment of semi-insulating InP:Fe layers for substrate applications
Grote, N.; Bach, H.G.; Feifel, T.; Franke, D.; Harde, P.; Sartorious, B.; Wolfram, P.
Conference Paper
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Conference Paper
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Journal Article