Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2008Quantum dot comb-laser as efficient light source for silicon photonics
Kovsh, A.; Gubenko, A.; Krestnikov, I.; Livshits, D.; Mikhrin, S.; Weimert, J.; West, L.; Wojcik, G.; Yin, D.; Bornholdt, C.; Grote, N.; Maximov, M.V.; Zhukov, A.
Conference Paper
2007Error-free 10 Gbit/s transmission using individual Fabry-Perot modes of low-noise quantum-dot laser
Gubenko, A.; Krestnikov, I.; Livshtis, D.; Mikhrin, S.; Kovsh, A.; West, L.; Bornholdt, C.; Grote, N.; Zhukov, A.
Journal Article
2001'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( lambda =1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Journal Article
2000"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper
2000'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( = 1.53-1.55 m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kuebler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( = 1.53 m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kuebler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Conference Paper