Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Analysis of the mitral valves based on high resolution MR images
Gong, Li
: Wesarg, Stefan (Betreuer)
Bachelor Thesis
1995Comparison of retrograde and conventional p-wells in regard latch-up susceptibility
Bogen, S.; Gong, L.; Frey, L.; Ryssel, H.; Körber, K.
Journal Article
1995Improved delineation technique for two dimensional dopant profiling
Gong, L.; Petersen, S.; Frey, L.; Ryssel, H.
Journal Article
1994Analytical description of high energy implantation profiles of bordon and phosphorus into crystalline silicon
Gong, L.; Bogen, S.; Frey, L.; Jung, W.; Ryssel, H.
Journal Article
1994Practical aspects of ion beam analysis of semiconductor structures
Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.
Journal Article
1993High energy implantation of high10 B and high11 B into -100- silicon in channel and in random
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Improvement of surface properties of polymers by ion implantation
Öchsner, R.; Kluge, A.; Zechel-Malonn, S.; Gong, L.; Ryssel, H.
Journal Article
1993A novel delineation technique for 2D-profiling of dopants in crystalline silicon
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1992High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Gyulai, J.; Ryssel, H.
Journal Article
1989Improvements in simulation at 2d implantation profiles
Gong, L.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper