Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
Himmerlich, M.; Knübel, A.; Aidam, R.; Kirste, L.; Eisenhardt, A.; Krischok, S.; Pezoldt, J.; Schley, P.; Sakalauskas, E.; Goldhahn, R.; Félix, R.; Mánuel, J.M.; Morales, F.M.; Carvalho, D.; Ben, T.; García, R.; Koblmüller, G.
Journal Article
2011Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Journal Article
2009Preface
Stokes, E.; Ambacher, O.; Goldhahn, R.; Huang, J.; Hunter, G.; Kohn, E.; O'Dwyer, C.; Overberg, M.E.
Conference Paper, Journal Article
2008Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
Buchheim, C.; Goldhahn, R.; Gobsch, G.; Tonisch, K.; Cimalla, V.; Niebelschütz, F.; Ambacher, O.
Journal Article
2008Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
Tonisch, K.; Buchheim, C.; Niebelschütz, F.; Schober, A.; Gobsch, G.; Cimalla, V.; Ambacher, O.; Goldhahn, R.
Journal Article