Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison of MOCVD and MBE regrowth for CAVET fabrication
Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei
Journal Article
2018GaN-based high electron mobility transistors with high Al-content barriers
Godejohann, Birte-Julia
: Paul, Oliver; Ambacher, Oliver; Fiederle, M.
Dissertation
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Conference Paper
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Journal Article
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Conference Paper
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article