Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Journal Article
2015Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance
Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.
Journal Article
2014Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications
Aidam, R.; Diwo, E.; Godejohann, B.-J.; Kirste, L.; Quay, R.; Ambacher, O.
Journal Article
2013Characterization of GaN/AlGaN heterostructures on Si
Godejohann, B.-J.
Master Thesis
2010Advanced front side metallization for crystalline silicon solar cells based on a fully plated contact
Bartsch, J.; Mondon, A.; Godejohann, B.-J.; Hörteis, M.; Glunz, S.W.
Conference Paper
2010Advanced front side metallization for crystalline silicon solar cells based on a nickel-silicon contact
Mondon, A.; Bartsch, J.; Godejohann, B.-J.; Hörteis, M.; Glunz, S.W.
Conference Paper