Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2006Hochratige optische Empfänger für 80/160 Gbit/s
Bach, H.G.; Beling, A.; Ebert, W.; Eckhardt, T.; Gibis, R.; Kunkel, R.; Maul, B.; Mekonnen, G.G.; Sahin, G.; Schlaak, W. et al.
Report
2004Monolithically integrated balanced photoreceiver OEIC comprising a distributed amplifier for 40 Gbit/s applications
Bach, H.-G.; Mekonnen, G.G.; Kunkel, R.; Schmidt, D.; Gibis, R.; Ebert, W.; Seeger, A.; Stollberg, M.; Schlaak, W.
Conference Paper
2001Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE
Kunzel, H.; Gibis, R.; Kaiser, R.; Malchow, S.; Schelhase, S.
Conference Paper
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Conference Paper, Journal Article
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Conference Paper, Journal Article
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Conference Paper, Journal Article
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Journal Article
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1998Monolithically integrated transceivers on InP: The development of a generic integration concept and its technological challenges
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Ebert, W.; Gibis, R.; Künzel, H.; Löffler, R.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.
Conference Paper
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Journal Article
1998Selective MOMBE growth of InP-based waveguide/laser butt-joints
Kuenzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.; Urmann, G.
Journal Article
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1997Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints
Kunzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1996MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications
Kuenzel, H.; Albrecht, P.; Gibis, R.; Hamacher, M.; Schelhase, S.
Conference Paper, Journal Article
1996MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth
Schelhase, S.; Boettcher, J.; Gibis, R.; Kuenzel, H.; Paraskevopoulos, A.
Conference Paper, Journal Article
1993Low-temperature MBE of AlGaInAs lattice-matched to InP
Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.
Conference Paper, Journal Article
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Journal Article
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Conference Paper, Journal Article
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Conference Paper