Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs
Salinaro, A.; Pobegen, G.; Aichinger, T.; Zippelius, B.; Peters, D.; Friedrichs, P.; Frey, L.
Journal Article
2013Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Conference Paper
2013SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Conference Paper
2012Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Poster
2012SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Poster
2011Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Journal Article
2010Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2010Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Conference Paper
2010Silicon carbide and related materials 2009
: Bauer, A.J.; Friedrichs, P.; Krieger, M.; Pensl, G.; Rupp, R.; Seyller, T.
Conference Proceedings
2009Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2009Electro-thermal SPICE model for high-voltage SiC VJFETs
Elpelt, R.; Friedrichs, P.; Hippeli, J.; Schörner, R.; Treu, M.; Türkes, P.
Conference Paper
2009Influence of the oxidation temperature and atmosphere on the reliability of thick gate oxides on the 4H-SiC C(000-1) face
Grieb, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Ryssel, H.
Conference Paper
2005Annealing of aluminum implanted 4H-SiC
Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H.
Conference Paper
2003Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC
Bauer, A.J.; Rambach, M.; Frey, L.; Weiss, R.; Rupp, R.; Friedrichs, P.; Schörner, R.; Peters, D.
Conference Paper
2000Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.; Stephani, D.; Ryssel, H.
Conference Paper
1999Reliability of metal-oxide-semiconductor capacitors on pH-silicon carbide
Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.
Conference Paper
1998Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4 H-silicon carbide
Treu, M.; Burte, E.P.; Schörner, R.; Friedrichs, P.; Stephani, D.; Ryssel, H.
Journal Article
1997Herstellung und Charakterisierung von Metall-Isolator-Halbleiterstrukturen auf hexagonalem Siliciumkarbid
Friedrichs, P.
Dissertation