Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012Strain and defects in Si-doped (Al)GaN epitaxial layers
Forghani, K.; Schade, L.; Schwarz, U.T.; Lipski, F.; Klein, O.; Kaiser, U.; Scholz, F.
Journal Article
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Conference Paper
2011High quality AlGaN epilayers grown on sapphire using SiNx interlayers
Forghani, K.; Klein, M.; Lipski, F.; Schwaiger, S.; Hertkorn, J.; Leute, R.A.R.; Scholz, F.; Feneberg, M.; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Gutt, R.; Passow, T.
Conference Paper, Journal Article
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper