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2010 | InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors Walther, M.; Rehm, R.; Schmitz, J.; Fleissner, J.; Rutz, F.; Kirste, L.; Scheibner, R.; Wendler, J.; Ziegler, J. | Conference Paper |
2009 | Advanced III/V quantum-structure devices for high performance infrared focal plane arrays Rehm, R.; Walther, M.; Schmitz, J.; Rutz, F.; Fleißner, J.; Scheibner, R.; Ziegler, J. | Conference Paper |
2009 | InAs/GaSb superlattice focal plane array infrared detectors: Manufacturing aspects Rutz, F.; Rehm, R.; Schmitz, J.; Fleissner, J.; Walther, M.; Scheibner, R.; Ziegler, J. | Conference Paper |
2009 | InAs/GaSb superlattices for advanced infrared focal plane arrays Rehm, R.; Walther, M.; Schmitz, J.; Rutz, F.; Fleißner, J.; Scheibner, R.; Ziegler, J. | Journal Article, Conference Paper |
2009 | Status of mid-infrared superlattice technology in Germany Rehm, R.; Walther, M.; Schmitz, J.; Rutz, F.; Fleissner, J.; Scheibner, R.; Ziegler, J. | Conference Paper |
2008 | Antimony-based superlattices for high-performance infrared imagers Walther, M.; Rehm, R.; Schmitz, J.; Rutz, F.; Fleißner, J.; Ziegler, J. | Conference Paper |
2008 | Bispectral infrared detectors for aircraft security Walther, M.; Rehm, R.; Fleissner, J.; Schmitz, J.; Rutz, F.; Scheibner, R.; Ziegler, J. | Conference Paper |
2007 | InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays Walther, M.; Rehm, R.; Fleißner, J.; Schmitz, J.; Ziegler, J.; Cabanski, W.; Breiter, R. | Conference Paper |
2006 | 2nd and 3rd generation thermal imagers based on type-II superlattice photodiodes Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Ziegler, J.; Cabanski, W.; Breiter, R. | Conference Paper |
2006 | Bispectral thermal imaging with quantum-well infrared photodetectors and InAs/GaSb type-II superlattices Rehm, R.; Walther, M.; Fleißner, J.; Schmitz, J.; Ziegler, J.; Cabanski, W.; Breiter, R. | Conference Paper |
2006 | Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Ziegler, J.; Cabanski, W.; Breiter, R. | Journal Article |
2006 | InAs/GaSb superlattice focal plane arrays for high performance thermal imaging Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Ziegler, J.; Cabanski, W.; Breiter, R. | Conference Paper |
2006 | InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Ziegler, J.; Cabanski, W. | Journal Article |
2006 | InAs/GaSb type-II superlattices for single- and dual-color focal plane arrays for the mid-infrared spectral range Rehm, R.; Schmitz, J.; Fleißner, J.; Walther, M.; Ziegler, J.; Cabanski, W.; Breiter, R. | Conference Paper, Journal Article |
2005 | 256 x 256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices Walther, M.; Rehm, R.; Fuchs, F.; Schmitz, J.; Fleißner, J.; Cabanski, W.; Eich, D.; Finck, M.; Rode, W.; Wendler, J.; Wollrab, R.; Ziegler, J. | Conference Paper, Journal Article |
2005 | Dual-band QWIP focal plane array for the second and third atmospheric windows Schneider, H.; Maier, T.; Fleißner, J.; Walther, M.; Koidl, P.; Weimann, G.; Cabanski, W.; Finck, M.; Menger, P.; Rode, W.; Ziegler, J. | Conference Paper, Journal Article |
2005 | Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors Walther, M.; Schmitz, J.; Rehm, R.; Kopta, S.; Fuchs, F.; Fleißner, J.; Cabanski, W.; Ziegler, J. | Conference Paper, Journal Article |
2005 | InAs/(GaIn)Sb short-period superlattices for focal plane arrays Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Cabanski, W.; Ziegler, J. | Conference Paper |
2005 | InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Ziegler, J.; Cabanski, W. | Conference Paper |
2005 | Infrared focal plane array based on MWIR/LWIR dual-band QWIPs: Detector optimization and array properties Schneider, H.; Maier, T.; Fleißner, J.; Walther, M.; Koidl, P.; Weimann, G.; Cabanski, W.; Finck, M.; Menger, P.; Rode, W.; Ziegler, J. | Conference Paper |
2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Conference Paper |
2005 | Passivation of InAs/(GaIn)Sb short-period superlattice photodiodes with 10 µm cutoff wavelength by epitaxial overgrowth with Al(x)Ga(1-x)As(y)Sb(1-y) Rehm, R.; Walther, M.; Fuchs, F.; Schmitz, J.; Fleißner, J. | Journal Article |
2005 | Physics and applications of InAs/(GaIn)Sb-based short period superlattices Fuchs, F.; Rehm, R.; Schmitz, J.; Fleißner, J.; Walther, M. | Conference Paper |
2005 | Third generation focal plane array IR detection modules and applications Cabanski, W.; Münzberg, M.; Rode, W.; Wendler, J.; Ziegler, J.; Fleißner, J.; Fuchs, F.; Rehm, R.; Schmitz, J.; Schneider, H.; Walther, M. | Conference Paper |
2004 | 3rd gen focal plane array IR detection modules and applications Cabanski, W.; Eberhardt, K.; Rode, W.; Wendler, J.; Ziegler, J.; Fleißner, J.; Fuchs, F.; Rehm, R.; Schmitz, J.; Schneider, H.; Walther, M. | Conference Paper |
2004 | 3rd gen focal plane array IR detection modules and applications Münzberg, M.; Cabanski, W.; Rode, W.; Wendler, J.; Ziegler, J.; Eberhardt, K.; Rehm, R.; Schmitz, J.; Fuchs, F.; Fleißner, J.; Walther, M.; Schneider, H. | Conference Paper |
2004 | High-resolution 3-5 µm/8-12mm dual-band quantum well infrared photodetector array Schneider, H.; Maier, T.; Fleißner, J.; Walther, M.; Koidl, P.; Weimann, G.; Cabanski, W.; Finck, M.; Menger, P.; Rode, W.; Ziegler, J. | Journal Article |
2004 | High-resolution QWIP focal plane arrays: Towards third-generation thermal imagers Schneider, H.; Fleißner, J.; Maier, T.; Walther, M.; Koidl, P.; Weimann, G.; Cabanski, W.; Finck, M.; Menger, P.; Rode, W.; Ziegler, J. | Conference Paper |
2004 | Mid-wavelength, long-wavelength, and dual-band QWIP focal plane arrays Schneider, H.; Fleißner, J.; Maier, T.; Walther, M.; Koidl, P.; Weimann, G.; Cabanski, W.; Finck, M.; Menger, P.; Rode, W.; Ziegler, J. | Conference Paper |
2004 | State of the art 3rd gen IR detection modules in Germany Cabanski, W.; Rode, W.; Wendler, J.; Ziegler, J.; Fleißner, J.; Fuchs, F.; Rehm, R.; Schmitz, J.; Schneider, H.; Walther, M. | Conference Paper |
2003 | High performance QWIP FPAs for the 8-12 µm and 3-5 µm regimes Schneider, H.; Fleißner, J.; Rehm, R.; Kiefer, R.; Walther, M.; Koidl, P.; Weimann, G. | Conference Paper |
2003 | High-resolution QWIP FPAs for the 8-12 µm and 3-5 µm regimes Schneider, H.; Fleißner, J.; Rehm, R.; Walther, M.; Pletschen, W.; Koidl, P.; Weimann, G.; Ziegler, J.; Breiter, R.; Cabanski, W. | Conference Paper |
2003 | Quantum well infrared photodetectors and thermal imaging cameras Schneider, H.; Fleißner, J.; Rehm, R.; Walther, M.; Koidl, P.; Weimann, G.; Ziegler, J.; Breiter, R.; Cabanski, W. | Conference Paper |
2002 | Low-noise quantum well infrared photodetectors for high-resolution thermal imaging Schneider, H.; Walther, M.; Fleißner, J.; Rehm, R.; Diwo, E.; Schwarz, K.; Koidl, P.; Weimann, G. | Conference Paper |
2001 | Ten years of QWIP development at Fraunhofer IAF Schneider, H.; Koidl, P.; Walther, Martin; Fleissner, J.; Rehm, Robert; Diwo, E.; Schwarz, Klaus; Weimann, G. | Conference Paper, Journal Article |
2000 | 40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M. | Conference Paper |
2000 | Long wavelength infrared GaAs/AlGaAs quantum well infrared photodetectors for 630x512 focal plane array camera systems with 20 mK NETD Walther, M.; Fleißner, J.; Schneider, H.; Schönbein, C.; Pletschen, W.; Diwo, E.; Schwarz, K.; Braunstein, J.; Koidl, P.; Ziegler, J.; Cabanski, W. | Conference Paper |
2000 | Low-noise QWIPs for FPA sensors with high thermal resolution Schneider, H.; Walther, M.; Fleissner, J.; Rehm, R.; Diwo, E.; Schwarz, K.; Koidl, P.; Weimann, G. | Conference Paper |
2000 | QWIP FPAs for high-performance thermal imaging Schneider, H.; Walther, M.; Schönbein, C.; Rehm, R.; Fleißner, J.; Pletschen, W.; Braunstein, J.; Koidl, P.; Weimann, G.; Ziegler, J.; Cabanski, W. | Journal Article |
1999 | GaAs/AlGaAs-Quantenfilm-Photodetektoren für Kameras im 8...12 Mikrometer Bereich Schneider, H.; Koidl, P.; Walther, M.; Fleissner, J.; Ziegler, J. | Journal Article |
1998 | III-V semiconductor quantum well and superlattice detectors Walther, M.; Fuchs, F.; Schneider, H.; Fleissner, J.; Schmitz, J.; Pletschen, W.; Braunstein, J.; Ziegler, J.; Cabanski, W.; Koidl, P.; Weinmann, G. | Conference Paper |
1998 | Photogalvanic effect in asymmetric quantum wells and superlattices Schneider, H.; Ehret, S.; Schönbein, C.; Schwarz, K.; Bihlmann, G.; Fleissner, J.; Tränkle, G.; Böhm, G. | Journal Article |
1997 | Photovoltaic quantum well infrared photodetectors: The four-zone scheme Schneider, H.; Schönbein, C.; Walther, M.; Schwarz, K.; Fleissner, J.; Koidl, P. | Journal Article |
1997 | Ultrafast intersubband photocurrent response in quantum-well infrared photodetectors Ehret, S.; Schneider, H.; Fleissner, J.; Koidl, P.; Böhm, G. | Journal Article |
1997 | Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
1996 | Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
1996 | Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Journal Article |
1996 | Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures Sah, R.E.; Ralston, J.D.; Daleiden, J.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Benz, W. | Journal Article |
1996 | High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A. | Conference Paper |
1996 | Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I. | Journal Article |
1996 | Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Conference Paper |
1995 | 37 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Conference Paper |
1995 | CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Book Article |
1995 | Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Journal Article |
1995 | Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J. | Conference Paper |
1995 | Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J. | Journal Article |
1994 | AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J. | Conference Paper |
1994 | DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J. | Conference Paper |
1994 | Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K. | Conference Paper |
1994 | Enhanced CAIBE for high-speed OEICs Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B. | Journal Article |
1994 | Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors. Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D. | Journal Article |
1994 | Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J. | Conference Paper |
1994 | Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K. | Journal Article |
1994 | MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding. Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Conference Paper |
1994 | MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R. | Conference Paper |
1993 | 30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
1993 | Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers. Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Journal Article |
1993 | Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices. Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J. | Journal Article |
1993 | Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Conference Paper |
1993 | P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers. Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J. | Journal Article |
1993 | Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE. Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J. | Journal Article |
1992 | 16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure. Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P. | Conference Paper |
1992 | Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers. Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J. | Conference Paper |
1992 | Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration. Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J. | Conference Paper |
1992 | Diffusive electrical conduction in high-speed p-i-n photodetectors. Schneider, H.; Larkins, E.C.; Fleissner, J.; Bender, G.; Koidl, P.; Ralston, J.D. | Journal Article |
1992 | Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers. Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Journal Article |
1992 | Grating coupling and intersubband absorption at 10mym in GaAs/AlXGa1-XAs infrared quantum well waveguides. Bittner, P.; Fleissner, J.; Dischler, B.; Gallagher, D.F.G.; Koidl, P.; Ralston, J.D. | Journal Article |
1992 | High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
1992 | Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J. | Conference Paper |
1992 | Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping. Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
1992 | Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration. Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J. | Conference Paper |
1991 | Grating coupled GaAs/AlGaAs waveguide structures for 10-mym detectors. Bittner, P.; Fleissner, J.; Gallagher, D.F.G.; Ralston, J.D. | Conference Paper |
1991 | Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy. Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G. | Journal Article |