Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1996Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations
Newman, R.C.; Ashwin, M.J.; Fahy, M.R.; Hart, L.; Holmes, S.N.; Roberts, C.; Zhang, X.; Wagner, J.
Journal Article
1994Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.
Wagner, J.; Ramsteiner, M.; Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Braun, W.; Ploog, K.
Journal Article
1994A local vibrational mode investigation of p-type Si-doped GaAs
Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Wagner, J.; Robbie, D.A.; Silier, I.; Sangster, M.J.L.; Bauser, E.; Braun, W.; Ploog, K.
Journal Article
1994The transition from dilute aluminium delta-structures to an AlAs monolayer in GaAs and a comparison with Si delta-doping
Ashwin, M.J.; Fahy, M.R.; Hart, L.; Newman, R.C.; Wagner, J.
Journal Article