Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?
Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.
Journal Article
2019Mask absorber development to enable next-generation EUVL
Philipsen, V.; Luong, K.V.; Opsomer, K.; Souriau, L.; Rip, J.; Detavernier, C.; Erdmann, A.; Evanschitzky, P.; Laubis, C.; Honicke, P.; Soltwisch, V.; Hendrickx, E.
Conference Paper
2019Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Journal Article
2018Attenuated PSM for EUV
Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.
Conference Paper
2018Fourier ptychography for lithography high NA systems
Dejkameh, A.; Erdmann, A.; Evanschitzky, P.; Ekinci, Y.
Conference Paper
2018Simulation study of illumination effects in high-NA EUV lithography
Ismail, M.; Evanschitzky, P.; Erdmann, A.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.F.
Conference Paper
2017Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
Erdmann, A.; Xu, D.; Evanschitzky, P.; Philipsen, V.; Luong, V.; Hendrickx, E.
Journal Article
2017Efficient simulation of EUV pellicles
Evanschitzky, P.; Erdmann, A.
Conference Paper
2017Large area manufacturing of plasmonic colour filters using substrate conformal imprint lithography
Rumler, Maximilian; Foerthner, M.; Baier, L.; Evanschitzky, P.; Becker, M.; Rommel, M.; Frey, L.
Journal Article
2017Reducing EUV mask 3D effects by alternative metal absorbers
Philipsen, V.; Luong, K.V.; Souriau, L.; Hendrickx, E.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.
Conference Paper
2017Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers
Philipsen, V.; Luong, K.V.; Souriau, L.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.; Hendrickx, E.
Journal Article
2016Challenges and simulation solutions for advanced lithography for nanometer interconnect patterning
Evanschitzky, Peter
Presentation
2016Challenges for predictive EUV mask modeling
Evanschitzky, Peter; Erdmann, Andreas
Presentation
2016Efficient simulation of EUV pellicles
Evanschitzky, Peter; Erdmann, Andreas
Presentation
2016Extreme ultraviolet multilayer defect analysis and geometry reconstruction
Xu, D.; Evanschitzky, P.; Erdmann, A.
Journal Article
2016Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography
Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.
Journal Article
2016Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Conference Paper
2016Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Conference Paper
2015Application of principal component analysis to EUV multilayer defect printing
Xu, D.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2015Application of the transport of intensity equation to EUV multilayer defect analysis
Xu, D.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2015Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried
Journal Article, Conference Paper
2015Mask-induced best-focus-shifts in DUV and EUV lithography
Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.
Conference Paper
2015Optical and EUV projection lithography: A computational view
Erdmann, A.; Fühner, T.; Evanschitzky, P.; Agudelo, V.; Freund, C.; Michalak, P.; Xu, D.B.
Journal Article
2014Application of artificial neural networks to compact mask models in optical lithography simulation
Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.
Journal Article
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Journal Article
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Conference Paper
2014Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried
Conference Paper
2013Application of artificial neural networks to compact mask models in optical lithography simulation
Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.
Conference Paper
2013Double patterning: Simulating a variability challenge for advanced transistors
Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen
Conference Paper
2013Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach
Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas
Journal Article
2013Modeling strategies for EUV mask multilayer defect dispositioning and repair
Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheere, R.
Conference Paper
2013Modeling studies on alternative EUV mask concepts for higher NA
Erdmann, A.; Fühner, T.; Evanschitzky, P.; Neumann, J.T.; Ruoff, J.; Gräupner, P.
Conference Paper
2012Analysis of EUV mask multilayer defect printing characteristics
Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheerec, R.
Conference Paper
2012Efficient simulation of EUV multilayer defects with rigorous data base approach
Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas
Conference Paper
2012Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography
Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.
Conference Paper
2012Imaging characteristics of binary and phase shift masks for EUV projection lithography
Erdmann, A.; Evanschitzky, P.
Conference Paper
2012Mutual source, mask and projector pupil optimization
Fühner, T.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2012Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Journal Article
2012Simulation of 3D inclined/rotated UV lithography and its application to microneedles
Liu, S.; Roeder, G.; Aygun, G.; Motzek, K.; Evanschitzky, P.; Erdmann, A.
Journal Article
2011Accuracy and performance of 3D mask models in optical projection lithography
Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.; Shao, F.; Limmer, S.; Fey, D.
Conference Paper
2011Alternative application of predictive image simulation: Speckle techniques for surface characterization
Evanschitzky, Peter
Presentation
2011Compensation of mask induced aberrations by projector wavefront control
Evanschitzky, Peter; Shao, Feng; Fühner, Tim; Erdmann, Andreas
Conference Paper
2011Determination of the dill parameters of thick positive resist for use in modeling applications
Roeder, G.; Liu, S.; Aygun, G.; Evanschitzky, P.; Erdmann, A.; Schellenberger, M.; Pfitzner, L.
Conference Paper, Journal Article
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Journal Article
2011Image simulation of projection systems in photolithography
Evanschitzky, Peter; Fühner, Tim; Erdmann, Andreas
Conference Paper
2011Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography
Erdmann, A.; Shao, F.; Agudelo, V.; Fühner, T.; Evanschitzky, P.
Journal Article
2011Predictive modeling of EUV-lithography: The role of mask, optics, and photoresist effects
Erdmann, A.; Evanschitzky, P.; Shao, F.; Fühner, T.; Lorusso, G.; Hendrickx, E.; Goethals, A.M.; Jonckheere, R.; Bret, T.; Hofmann, T.
Conference Paper
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Conference Paper
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen
Poster
2010Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.
Conference Paper
2010Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis
Evanschitzky, P.; Fühner, T.; Shao, F.; Erdmann, A.
Conference Paper
2010Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models
Shao, F.; Evanschitzky, P.; Motzek, K.; Erdmann, A.
Conference Paper
2010Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Conference Paper
2010Mask and wafer topography effects in optical and EUV-lithography
Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.
Conference Paper
2010Mask diffraction analysis and optimization for extreme ultraviolet masks
Erdmann, A.; Evanschitzky, P.; Fühner, T.
Journal Article
2010Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography
Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.
Conference Paper, Journal Article
2010Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes
Rahimi, Z.; Erdmann, A.; Evanschitzky, P.; Pflaum, C.
Conference Paper
2009Efficient analysis of three dimensional EUV mask imaging artifacts using the waveguide decomposition method
Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Conference Paper
2009Efficient simulation and optimization of wafer topographies in double patterning
Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Conference Paper
2009Exploration of linear and non-linear double exposure techniques by simulation
Petersen, J.S.; Greenway, R.T.; Fühner, T.; Evanschitzky, P.; Shao, F.; Erdmann, A.
Conference Paper
2009Extended Abbe approach for fast and accurate lithography imaging simulations
Evanschitzky, P.; Erdmann, A.; Fühner, T.
Conference Paper
2009Lithography simulation: Modeling techniques and selected applications
Erdmann, A.; Fühner, T.; Shao, F.; Evanschitzky, P.
Conference Paper
2009Mask diffraction analysis and optimization for EUV masks
Erdmann, A.; Evanschitzky, P.; Fühner, T.
Conference Paper
2009Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects
Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.
Conference Paper
2009Rigorous diffraction simulations of topographic wafer stacks in double patterning
Feng, S.; Evanschitzky, P.; Fühner, T.; Erdmann, A.
Conference Paper, Journal Article
2008Benchmark of rigorous methods for electromagnetic field simulations
Burger, S.; Zschiedrich, L.; Schmidt, F.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2008Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique
Shao, F.; Evanschitzky, P.; Reibold, D.; Erdmann, A.
Conference Paper
2008Optimization of mask absorber stacks and illumination settings for contact hole imaging
Erdmann, A.; Fühner, T.; Evanschitzky, P.
Conference Paper
2008Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects
Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.
Conference Paper
2008Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios
Erdmann, A.; Evanschitzky, P.; Fühner, T.; Schnattinger, T.; Xu, C.B.; Szmanda, C.
Conference Paper
2008Simulation-based EUV source and mask optimization
Fühner, T.; Erdmann, A.; Evanschitzky, P.
Conference Paper
2007Fast near field simulation of optical and EUV masks using the waveguide method
Evanschitzky, P.; Erdmann, A.
Conference Paper
2007Impact of alternative mask stacks on the imaging performance at NA 1.20 and above
Philipsen, V.; Mesuda, K.; Bisschop, P. de; Erdmann, A.; Citarella, G.; Evanschitzky, P.; Birkner, R.; Richter, R.; Scherübl, T.
Conference Paper
2007The impact of the mask stack and its optical parameters on the imaging performance
Erdmann, A.; Fühner, T.; Seifert, S.; Popp, S.; Evanschitzky, P.
Conference Paper
2007Rigorous electromagnetic field mask modeling and related lithographic effects in the low k(1) and ultrahigh numerical aperture regime
Erdmann, A.; Evanschitzky, P.
Journal Article
2007Simulation of larger mask areas using the waveguide method with fast decomposition technique
Evanschitzky, P.; Shao, F.; Erdmann, A.; Reibold, D.
Conference Paper
2007Simulation of proximity and contact lithography
Meliorisz, B.; Evanschitzky, P.; Erdmann, A.
Journal Article
2006Rigorous mask modeling beyond the Hopkins approach
Schermer, J.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2006Rigorous mask modeling using waveguide and FDTD methods. An assessment for typical hyper NA imaging problems
Erdmann, A.; Evanschitzky, P.; Citarella, G.; Fühner, T.; Bisschop, P. de
Conference Paper
2006Rigorous mask modelling beyond the hopkins approach
Schermer, J.; Evanschitzky, P.; Erdmann, A.
Conference Paper
2006Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask
Erdmann, A.; Citarella, G.; Evanschitzky, P.; Schermer, H.; Philipsen, V.; Bisschop, P. de
Conference Paper
2005Aerial image analysis for defective masks in optical lithography
Graf, T.; Erdmann, A.; Evanschitzky, P.; Tollkühn, B.; Eggers, K.; Ziebold, R.; Teuber, S.; Höllein, I.
Conference Paper
2005Mask and wafer topography effects in immersion lithography
Erdmann, A.; Evanschitzky, P.; Bisschop, P. de
Conference Paper
2005Three dimensional EUV simulations: a new mask near field and imaging simulation system
Evanschitzky, P.; Erdmann, A.
Conference Paper
2004Enhanced model for the efficient 2D and 3D simulation of defective EUV masks
Evanschitzky, P.; Erdmann, A.
Conference Paper
2004The impact of EUV mask defects on lithographic process performance
Evanschitzky, P.; Erdmann, A.
Conference Paper
2003EUV mask simulation for AIMS
Windpassinger, R.; Rosenkranz, N.; Scherübl, T.; Evanschitzky, P.; Erdmann, A.; Zibold, A.
Conference Paper
2003Rigorous simulation of defective EUV multilayer masks
Sambale, C.; Schmöller, T.; Erdmann, A.; Evanschitzky, P.; Kalus, C.
Conference Paper
2003Simulation of extreme ultraviolet masks with defective multilayers
Evanschitzky, P.; Erdmann, A.; Besacier, M.; Schiavone, P.
Conference Paper