Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1990Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements
Moritz, R.; Rothemund, W.; Brandt, G.; Ennen, H.
Journal Article
1990Doping density dependence of intersubband transitions in GaAs/AlxGa1-xAs quantum-well structures.
Ralston, J.D.; Biebl, H.; Koidl, P.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Journal Article
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Conference Paper
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Conference Paper
1990Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P.
Journal Article
1989Strained-layer InGaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy.
Offsey, S.D.; Schaff, W.J.; Tasker, P.J.; Eastman, L.F.; Ennen, H.
Journal Article
1988Resonance Raman scattering of Si local vibrational modes in GaAs
Maier, M.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Journal Article
1987Erbium doping of molecular beam epitaxial GaAs
Smith, R.S.; Müller, H.D.; Wennekers, P.; Maier, M.; Ennen, H.
Journal Article
1987Photo- and electroluminescence investigation of rare earth ions in III-V semiconductors
Ennen, H.
Conference Paper
1987Photoluminescence excitation measurements on GaAs-Er grown by molecular-beam epitaxy
Müller, H.D.; Smith, R.S.; Ennen, H.; Wagner, J.
Journal Article
1986Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J.
Book
1986Neodymium complexed in GaP seperated by photoluminescence excitation spectroscopy
Müller, H.D.; Ennen, H.; Wagner, J.
Journal Article
1986Photoluminescence of neodymium-implanted gallium phosphide and gallium arsenide
Mueller, H.D.; Schneider, J.; Axmann, A.; Ennen, H.
Journal Article
1986Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP
Haydl, W.H.; Pomrenke, G.S.; Ennen, H.
Journal Article
1986Polarized anisotropic photoluminescence of laser-related transitions in YAIO3/Nd and YAIO3/ER and line broadening by resonant lattice phonons
Dischler, B.; Ennen, H.
Journal Article
1986Rare earth ions in LPE III-V semiconductors
Müller, H.D.; Körber, W.; Weber, J.; Hangleiter, A.; Benz, K.W.; Ennen, H.
Journal Article
19851.54-micro m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy.
Pomrenke, G.; Axmann, A.; Schneider, J.; Eisele, K.M.; Haydl, W.H.; Ennen, H.
Journal Article
1985Luminescence of rare earth ions in III-V semiconductors
Schneider, J.; Ennen, H.
Journal Article
1985Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs
Pomrenke, G.; Axmann, A.; Ennen, H.
Journal Article
1985Optoelektronisches Bauelement, insbesondere eine Laserdiode oder eine Leuchtdiode
Ennen, H.; Schneider, J.
Patent
1985Ytterbium-doped InP light-emitting diode at 1.0 Mue m
Mueller, H.D.; Koerber, W.; Benz, K.W.; Haydl, W.H.; Ennen, H.
Journal Article
1985Zeeman analysis of the ytterbium luminescence in indium phosphide
Schneider, J.; Aszodi, G.; Weber, J.; Pu-lin, L.; Kaufmann, U.; Uihlein, C.; Ennen, H.; Windscheif, J.
Journal Article
1984Optoelektronisches Bauelement, insbesondere eine Laserdiode oder eine Leuchtdiode
Ennen, H.; Schneider, J.
Patent
1984Photoluminescence excitation spectroscopy on InP:Yb
Ennen, H.; Wagner, J.; Windscheif, J.
Journal Article
19831.54-micro m luminescence of erbium-implanted III-V semiconductors and silicon.
Schneider, J.; Pomrenke, G.; Axmann, A.; Ennen, H.
Journal Article
1983Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs
Schneider, J.; Kimura, T.; Kaufmann, U.; Ennen, H.; Windscheif, J.
Journal Article
1983Rare earth activated luminescence in InP, GaP and GaAs.
Pomrenke, G.; Schneider, J.; Axmann, A.; Kaufmann, U.; Ennen, H.; Windscheif, J.
Journal Article
1982Identification of As
Weber, E.R.; Wosinski, T.; Kaufmann, U.; Windscheif, J.; Ennen, H.
Journal Article
1982Selenium doping of molecular beam epitaxial GaAs using SnSe2.
Smith, R.S.; Ganser, P.M.; Ennen, H.
Journal Article
1982Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H.
Journal Article