Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Near-field characteristics of broad area diode lasers during catastrophic optical damage failure
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Conference Paper
2012Near-field evolution in strongly pumped broad area diode lasers
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Conference Paper
2011High-resolution near-field optical investigation of crystalline domains in oligomeric PQT-12 thin films
Kuehn, S.; Pingel, P.; Breusing, M.; Fischer, T.; Stumpe, J.; Neher, D.; Elsaesser, T.
Journal Article
2005Codoping and grain-boundary cosegregation of substitutional cations in alpha-Al2O3: A density-functional-theory study
Elsässer, C.; Elsässer, T.
Journal Article
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Conference Paper
2002Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at a wavelength of 1.55 m
Biermann, K.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.; Künzel, H.
Conference Paper
2002Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 µm
Biermann, K.; Nickel, D.; Reimann, K.; Woerner, M.; Elsässer, T.; Künzel, H.
Journal Article
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Conference Paper, Journal Article
2000Facet degradation of high-power diode laser arrays
Tomm, J.W.; Thamm, E.; Bärwolff, A.; Elsässer, T.; Luft, J.; Baeumler, M.; Müller, S.; Jantz, W.; Rechenberg, I.
Journal Article
1995Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields
Tomm, J.W.; Mocker, M.; Kelz, T.; Elsaesser, T.; Klann, R.; Novikov, B.V.; Talalaev, V.G.; Tudorovskii, V.E.; Böttner, H.
Conference Paper
1995Threshold of stimulated emission in multi-valley lead salts
Tomm, J.W.; Mocker, M.; Kelz, T.; Elsaesser, T.; Klann, R.; Novikov, B.V.; Tudorovskii, V.E.; Böttner, H.; Talalaev, V.G.
Journal Article
1993Ultrafast recombination processes in lead chalcogenide semiconductors studied via picosecond optical nonlinearities.
Klann, R.; Höfer, T.; Buhleier, R.; Elsaesser, T.; Lambrecht, A.
Journal Article
1992Picosecond recombination processes in lead selenide.
Klann, R.; Höfer, T.; Buhleier, R.; Elsaesser, T.; Lambrecht, A.
Journal Article
1991Picosecond optical nonlinearity in lead chalcogenide semiconductors.
Buhleier, R.; Elsaesser, T.; Klann, R.; Lambrecht, A.
Journal Article
1984Parametric generation of tunable picosecond pulses in the medium infrared using AgGaS2 crystals.
Seilmeier, A.; Kaiser, W.; Brandt, G.; Elsaesser, T.; Koidl, P.
Journal Article