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| 1996 | InGaAsP/InP 1.55-micron lasers with chemically assisted ion beam-etched facets
Daleiden, J.; Eisele, K.; Keller, R.; Vollrath, G.; Fiedler, F.; Ralston, J.D. | Journal Article |
| 1995 | Characteristics of a two-component chemically-assisted ion-beam etching techniques for dry etching of high-speed multiple quantum well laser mirrors
Sah, R.E.; Ralston, J.D.; Weisser, S.; Eisele, K. | Journal Article |
| 1995 | Chemical analysis of a C12/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions
Daleiden, J.; Eisele, K.; Sah, R.E.; Schmidt, K.H.; Ralston, J.D. | Journal Article |
| 1995 | Low-temperature CAIBE processes for InP-based optoelectronics
Daleiden, J.; Eisele, K.; Ralston, J.D.; Fiedler, F.; Vollrath, G. | Conference Paper |
| 1994 | Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K. | Conference Paper |
| 1994 | Enhanced CAIBE for high-speed OEICs
Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B. | Journal Article |
| 1994 | Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J. | Conference Paper |
| 1994 | Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K. | Journal Article |
| 1992 | A second look at reactive ion-beam etching and chemically-assisted ion-beam etching
Eisele, K.M. | Journal Article |
| 1990 | Photolytic silicon nitride deposition for gallium arsenide by 193 excimer laser radiation
Rothemund, W.; Dischler, B.; Eisele, K.M. | Journal Article |
| 1987 | Electrode separation and convex electrode surfaces in plasma etching
Eisele, K.M. | Journal Article |
| 1986 | Deposition of polymer film patterns by ion beams
Fritzsche, C.R.; Eisele, K.M. | Journal Article |
| 1986 | Etching of SiO2 in a narrowly confined plasma of high power density
Eisele, K.M. | Journal Article |
| 1985 | 1.54-micro m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy.
Pomrenke, G.; Axmann, A.; Schneider, J.; Eisele, K.M.; Haydl, W.H.; Ennen, H. | Journal Article |
| 1984 | Effects of heavy metal contamination from corrosive gas and dopant handling equipment in silicon wafer processing
Klausmann, E.; Eisele, K.M. | Journal Article |
| 1983 | Deposition of masking films by ion beam induced polymerization.
Eisele, K.M.; Fritzsche, C. | Book Article |
| 1982 | Die Anwendung der Plasmamassenspektrometrie beim Plasmaaetzen
Eisele, K.M. | Journal Article |
| 1982 | Phosphorus pentaflouride and sulfurylfluoride applied to etch SiO2 in search for higher selectivities
Eisele, K.M. | Journal Article |
| 1973 | VERFAHREN ZUR PASSIVIERUNG DER OBERFLAECHE VON HALBLEITERBAUELEMENTEN MIT P-N-UEBERGAENGEN
Goetzberger, A.; Eisele, K. | Patent |