Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2005Resonant tunnelling and intersubband absorption in AlN - GaN superlattices
Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, W.J.; Eastman, L.F.; Kirste, L.
Journal Article
2005Tunneling effects and intersubband absorption in AlN/GaN superlattices
Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, J.; Eastman, L.F.; Kirste, L.
Journal Article
2000GaN static induction transistor fabrication
Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.
Conference Paper
1999Modulationsdotierter Feldeffekttrasistor mit kompositionsmodulierter Barrierenstruktur
Bachem, K.H.; Eastman, L.F.
Patent
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1995GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications
Pereiaslavets, B.; Bachem, K.; Braunstein, J.; Eastman, L.F.
Conference Paper
1995Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
Martin, G.H.; Seaford, K.L.; Spencer, R.; Braunstein, J.; Eastman, L.F.
Conference Paper
1992Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz
Haydl, W.H.; Braunstein, J.; Kitazawa, T.; Schlechtweg, M.; Tasker, P.J.; Eastman, L.F.
Conference Paper
1991Quantum-Well interdiffusion for integrated photonics.
Eastman, L.F.; Dischler, B.; Ralston, J.D.
Conference Paper
1989Strained-layer InGaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy.
Offsey, S.D.; Schaff, W.J.; Tasker, P.J.; Eastman, L.F.; Ennen, H.
Journal Article