Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications
Tajalli, A.; Meneghini, M.; Besendörfer, S.; Kabouche, R.; Abid, I.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Journal Article
2020The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
Besendörfer, S.; Meissner, E.; Medjoub, F.; Derluyn, J.; Friedrich, J.; Erlbacher, T.
Journal Article
2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
Abid, I.; Kabouche, R.; Medjdoub, F.; Besendörfer, S.; Meissner, E.; Derluyn, J.; Degroote, S.; Germain, M.; Miyake, H.
Conference Paper
2020Vertical breakdown of GaN on Si due to V-pits
Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.
Journal Article
2020Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C.D.; Benazzi, D.; Besendörfer, S.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Journal Article
2016Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics
Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.
Journal Article
2016Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices
Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.
Conference Paper