Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2008Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C.
Journal Article
2001Barium, strontium and bismuth contamination in CMOS processes
Boubekeur, H.; Mikolajick, T.; Höpfner, J.; Dehm, C.; Pamler, W.; Steiner, J.; Kilian, G.; Kolbesen, B.O.; Bauer, A.; Frey, L.; Ryssel, H.
Conference Paper
2001Impact of platinum contamination on ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H.
Journal Article
2000Aspects of barium contamination in high dielectric dynamic random-access memories
Boubekeur, H.; Hopfner, J.; Mikolajick, T.; Dehm, C.; Frey, L.; Ryssel, H.
Journal Article
1994Ion-beam induced CoSi2 layers - formation and contact properties.
Dehm, C.; Kasko, I.; Ryssel, H.
Journal Article
1994Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments
Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H.
Journal Article
1993Effect of ion-beam mixing temperature on cobalt silicide formation
Kasko, I.; Dehm, C.; Frey, L.; Ryssel, H.
Journal Article
1993Influence of impurities on ion beam induced TiSi2 formation
Dehm, C.; Raum, B.; Kasko, I.; Ryssel, H.
Journal Article
1992The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J.
Journal Article
1992Influence of low-dose ion-beam mixing on CoSi2 formation
Kasko, I.; Dehm, C.; Ryssel, H.
Conference Paper
1992Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing
Dehm, C.; Kasko, I.; Burte, E.P.; Ryssel, H.
Conference Paper
1992Shallow, titanium-silicided p and n junction formation by triple germanium amorphization
Dehm, C.; Gyulai, J.; Ryssel, H.
Journal Article
1991Formation and contact properties of titanium-silicided shallow junctions
Dehm, C.; Gyulai, J.; Ryssel, H.
Conference Paper
1989Ion-beam mixed MoSi2 layers - formation and contract properties
Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G.
Conference Paper
1988The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.
Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G.
Book Article