Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2001Carbon-doped MOCVD InP is semi-insulating up to 700°C
Newman, R.C.; Davidson, B.R.; Wagner, J.; Sangster, M.J.L.; Leigh, R.S.
Journal Article
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Journal Article
1998Di-carbon complexes in AlAs and GaAs
Latham, C.D.; Jones, R.; Wagner, J.; Davidson, B.R.; Newman, R.C.; Button, C.C.; Briddon, P.R.; Öberg, S.
Journal Article
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Journal Article
1995Dynamics of the H-CAs complex in GaAs determined from Raman measurements
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Journal Article
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Conference Paper
1995Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.
Journal Article
1994The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres.
Newman, R.C.; Davidson, B.R.; Addinall, R.; Murray, R.; Emmert, J.W.; Wagner, J.; Götz, W.; Roos, G.; Pensl, G.
Journal Article
1994Infrared and Raman studies of carbon impurities in highly doped MBE AlAs-C.
Davidson, B.R.; Newman, R.C.; Pritchard, R.E.; Robbie, D.A.; Sangster, M.J.L.; Wagner, J.; Fischer, A.; Ploog, K.
Journal Article
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article