Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs
Jauss, S.A.; Hallaceli, K.; Mansfeld, S.; Schwaiger, S.; Daves, W.; Ambacher, O.
Journal Article
2016Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Conference Paper
2016Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Journal Article
2015Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.
Conference Paper
20124H-SiC MOSFETs with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2012Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications
Daves, W.; Kraus, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Journal Article
2011Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications
Daves, W.; Krauss, A.; Behnel, N.; Häublein, V.; Bauer, A.; Frey, L.
Journal Article
2011Comparative study on metallization and passivation materials for high temperature sensor applications
Daves, W.; Krauss, A.; Le-Huu, M.; Kronmüller, S.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2011Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2011Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Journal Article