Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method
Stockmeier, Ludwig
: Lerch, R.; Frey, L.; Danilewsky, A.N.
2016Evolution of impurity incorporation during ammonothermal growth of GaN
Sintonen, S.; Wahl, S.; Richter, S.; Meyer, S.; Suihkonen, S.; Schulz, T.; Irmscher, K.; Danilewsky, A.N.; Tuomi, T.O.; Stankiewicz, R.; Albrecht, M.
Journal Article
2016Structural analysis of diamond substrates and homoepitaxial diamond layers
Ligl, J.
: Danilewsky, A.N. (Betreuer); Fiederle, M. (Betreuer)
Master Thesis
2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.
Conference Paper
2013Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.
Journal Article
2011Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
Kallinger, B.; Polster, S.; Berwian, P.; Friedrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, A.-D.
Journal Article