Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Experimental impact cratering: A summary of the major results of the MEMIN research unit
Kenkmann, Thomas; Deutsch, Alex; Thoma, Klaus; Ebert, Matthias; Poelchau, Michael; Buhl, Elmar; Carl, Eva-Regine; Danilewsky, Andreas; Dresen, Georg; Dufresne, Anja; Durr, Nathanaël; Ehm, Lars; Grosse, Christian; Gulde, Max; Güldemeister, Nicole; Hamann, Christopher; Hecht, Lutz; Hiermaier, Stefan; Hoerth, Tobias; Kowitz, Astrid; Langenhorst, Falko; Lexow, Bernd; Liermann, Hanns-Peter; Luther, Robert; Mansfeld, Ulrich; Moser, Dorothee; Raith, Manuel; Reimold, Wolf Uwe; Sauer, Martin; Schäfer, Frank; Schmitt, Ralf Thomas; Sommer, Frank; Wilk, Jacob; Winkler, Rebecca; Wünnemann, Kai
Journal Article
2018Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method
Stockmeier, Ludwig
: Lerch, R.; Frey, L.; Danilewsky, A.N.
Dissertation
2017Anisotropic and temperature-dependent thermal conductivity of PbI2
Cröll, Arne; Tonn, Jörg Christian; Post, Ekkehard; Böttner, Harald; Danilewsky, Andreas Nikolaus
Journal Article
2016Evolution of impurity incorporation during ammonothermal growth of GaN
Sintonen, S.; Wahl, S.; Richter, S.; Meyer, S.; Suihkonen, S.; Schulz, T.; Irmscher, K.; Danilewsky, A.N.; Tuomi, T.O.; Stankiewicz, R.; Albrecht, M.
Journal Article
2016Structural analysis of diamond substrates and homoepitaxial diamond layers
Ligl, J.
: Danilewsky, A.N. (Betreuer); Fiederle, M. (Betreuer)
Master Thesis
2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.
Conference Paper
2014Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth
Carl, E.R.; Danilewsky, A.; Meissner, E.; Geiger, T.
Journal Article
2014Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages
Wong, C.S.; Bennett, N.S.; Manessis, D.; Danilewsky, A.; McNally, P.J.
Journal Article
2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
Sintonen, S.; Rudziński, M.; Suihkonen, S.; Jussila, H.; Knetzger, M.; Meissner, E.; Danilewsky, A.; Tuomi, T.O.; Lipsanen, H.
Journal Article
2013Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.
Journal Article
2012Analysis of threading dislocations in 4H-SiC by defect selective etching and X-ray topography
Kallinger, Birgit; Berwian, P.; Friedrich, J.; Danilewsky, A.; Wehrhahn, A.; Weber, A.-D.
Presentation
2011Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
Kallinger, B.; Polster, S.; Berwian, P.; Friedrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, A.-D.
Journal Article