Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019The rat bone marrow micronucleus test: Statistical considerations on historical negative control data
Igl, Bernd-Wolfgang; Bitsch, Annette; Bringezu, Frank; Chang, Steffi; Dammann, Martina; Frötschl, Roland; Harm, Volker; Kellner, Rupert; Krzykalla, Volker; Lott, Jasmin; Nern, Marlies; Pfuhler, Stefan; Queisser, Nina; Schulz, Markus; Sutter, Andreas; Vaas, Lea; Vonk, Richardus; Zellner, Dietmar; Ziemann, Christina
Journal Article
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Journal Article
2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching
Waltereit, P.; Preschle, M.; Müller, S.; Kirste, L.; Czap, H.; Ruster, J.; Dammann, M.; Reiner, R.
Conference Paper
2018Investigation of processing modules to establish a mm-wave foundry process for space applications
Brueckner, Peter; Dammann, Michael; Quay, Rüdiger
Conference Paper
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Conference Paper
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Conference Paper
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Conference Paper
2017Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects
Zibold, Andreas; Dammann, Michael; Schmidt, Ralf; Konstanzer, Helmer; Kunzer, Michael
Journal Article
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Journal Article
2016Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Journal Article
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
2014Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2014Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Sequential atmospheric pressure plasma-assisted laser ablation of photovoltaic cover glass for improved contour accuracy
Gerhard, C.; Dammann, M.; Wieneke, S.; Viöl, W.
Journal Article
2013(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Journal Article
201335 nm mHEMT technology for THz and ultra low noise applications
Leuther, A.; Tessmann, A.; Dammann, M.; Massler, H.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2013Aberration corrected TEM and Super-X STEM-EDXS characterization of high electron mobility transistor structures
Graff, A; Simon-Najasek, M.; Altmann, F.; Dammann, M.
Conference Paper
2013Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
Journal Article
2013GaN HEMTs and MMICs for space applications
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Journal Article
2013Qualification of 50 V GaN on SiC technology for RF power amplifiers
Wel, P.J. van der; Roedle, T.; Lambert, B.; Blanck, H.; Dammann, M.
Journal Article, Conference Paper
2013Recent developments in GaN HEMTs and MMICs for high power electronics
Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2012High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.
Conference Paper
2012High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours
Waltereit, P.; Kuhn, J.; Quay, R.; Raay, F. van; Dammann, M.; Casar, M.; Muller, S.; Mikulla, M.; Ambacher, O.; Latti, J.; Rostewitz, M.; Hirche, K.; Daubler, J.
Conference Paper
2012Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Conference Paper
2012Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Conference Paper
2012Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
2012Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2012Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2011Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2011Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Conference Paper
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Journal Article
2010Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010GaN power FETs for next generation mobile communication systems
Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2010High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
Conference Paper
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Journal Article
2010Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K.
Conference Paper
2010Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R.
Journal Article
2009Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper, Journal Article
2009Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P.
Conference Paper
2009GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Journal Article
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Journal Article
2009L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2009Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Journal Article, Conference Paper
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Conference Paper
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G.
Journal Article
2008High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper
2008Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Conference Paper
2008A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al.
Conference Paper
200750 nm MHEMT technology for G- and H-band MMICs
Leuther, A.; Tessmann, A.; Dammann, M.; Schwörer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G.
Conference Paper
2007GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2006GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G.
Journal Article
2005A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Journal Article
2005Metamorphic 50 nm InAs-Channel HEMT
Leuther, A.; Weber, R.; Dammann, M.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G.
Conference Paper
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Conference Paper
2005Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2005Reliability of 50 nm low-noise metamorphic HEMTs and LNAs
Dammann, M.; Leuther, A.; Tessmann, A.; Massler, H.; Mikulla, M.; Weimann, G.
Journal Article
2004Reliability of 70 nm metamorphic HEMTs
Dammann, M.; Leuther, A.; Quay, R.; Meng, M.; Konstanzer, H.; Jantz, W.; Mikulla, M.
Journal Article
200370 nm low-noise metamorphic HEMT technology on 4 Inch GaAs wafers
Leuther, A.; Tessmann, A.; Dammann, M.; Reinert, W.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G.
Conference Paper
2003Metamorphic HEMT technologies for millimeter-wave low-noise applications
Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schwörer, C.; Dammann, M.; Walther, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W.
Journal Article
2002AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2002Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
Rinner, F.; Rogg, J.; Wiedmann, N.; Konstanzer, H.; Dammann, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Conference Paper
2002High-field step-stress and long term stability of PHEMTs with different gate and recess lengths
Cova, P.; Menozzi, R.; Dammann, M.; Feltgen, T.; Jantz, W.
Journal Article
2002Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2002Reliability of metamorphic HEMTs for power applications
Dammann, M.; Benkhelifa, F.; Meng, M.; Jantz, W.
Journal Article
2001Effect of gate metal on reliability of metamorphic HEMTs
Dammann, M.; Leuther, A.; Konstanzer, H.; Jantz, W.
Conference Paper
2001High performance metamorphic HEMT with 0.25 µm refractory metal gate on 4´´ GaAs substrate
Benkhelifa, F.; Chertouk, M.; Dammann, M.; Massler, H.; Walther, M.; Weimann, G.
Conference Paper
20000.15 mu-m passivated InP-based HEMT MMIC technology with high thermal-stability in hydrogen ambient
Chertouk, M.; Dammann, M.; Kohler, K.; Weimann, G.
Journal Article
2000Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Marsetz, W.; Schmidt, K.; Weimann, G.
Journal Article
2000Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Weimann, G.
Journal Article
2000W-band MMICs with 0.15 mu-m metamorphic InAlAs/InGaAs HEMTs on GaAs substrate - performance, thermal- stability and reliability
Chertouk, M.; Kudszus, S.; Dammann, M.; Reuter, R.; Kohler, K.; Weimann, G.
Conference Paper
1999Fraunhofer-Institut für Angewandte Festkörperphysik. Annual Report 1998
: Dammann, M.
Electronic Publication, Annual Report
1999Passivated 0,15 mu m InAlAs/InGaAs HEMTs with 500 GHz f(max). HF performance, thermal stability and reliability
Chertouk, M.; Dammann, M.; Massler, M.; Köhler, K.; Weimann, G.
Conference Paper
1999Reliability of passivated 0.15 mu m InAlAs/InGaAs HEMT's with pseudomorphic channel
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.
Conference Paper
1998Effect of atmosphere on reliability of passivated 0.15 mu m InAlAs/InGaAs HEMTs
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.
Journal Article
1998Influence of layout and packaging on the temperature of GaAs power PHEMTs
Marsetz, W.; Dammann, M.; Kawashima, H.; Rüdiger, J.; Matthes, B.; Hülsmann, A.; Schlechtweg, M.
Conference Paper
1998Millimeter wave InP HEMT MMIC technology. Thermal stability and performace
Chertouk, M.; Steinhagen, F.; Massler, H.; Dammann, M.; Haydl, W.H.; Köhler, K.; Weimann, G.
Conference Paper
1998Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
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