Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Electrocaloric temperature change in ferroelectric Si-doped hafnium oxide (HfO2) thin films
Mart, C.; Kämpfe, T.; Pätzold, B.; Rudolph, M.; Czernohorsky, M.; Müller, J.; Weinreich, W.
Presentation
2019High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates
Kühnel, Kati; Czernohorsky, M.; Riedel, Steffen; Mart, Clemens; Weinreich, Wenke
Journal Article
2019Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.
Conference Paper
2019Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.
Poster
2018Aspects of high aspect ratio silicon etching - capacitor application
Rudolph, Matthias; Pätzold, Björn; Czernohorsky, Malte
Presentation
2018CMOS compatible pyroelectric applications enabled by doped HfO2 films on deep-trench structures
Mart, Clemens; Weinreich, Wenke; Czernohorsky, Malte; Riedel, Stefan; Zybell, Sabine; Kühnel, Kati
Conference Paper
2018Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films
Mart, Clemens; Czernohorsky, Malte; Zybell, Sabine; Kämpfe, Thomas; Weinreich, Wenke
Journal Article
2018High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Calvo, J.; Zimmermann, K.; Müller, J.
Journal Article
2018Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.
Journal Article
2017Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3
Mart, C.; Zybell, S.; Riedel, S.; Czernohorsky, M.; Seidel, K.; Weinreich, W.
Journal Article
2017High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation
Czernohorsky, M.; Seidel, K.; Kühnel, K.; Niess, J.; Sacher, N.; Kegel, W.; Lerch, W.
Journal Article
2017Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal-insulator-metal capacitors using an optimized thermal treatment
Lefevre, A.; Ferreira, D.; Veillerot, M.; Barnes, J.-P.; Parat, G.; Czernohorsky, M.; Lallemand, F.
Journal Article
2016Catalytic ALD of SiO2 as spacer for an E-Beam direct write self-aligned double patterning process on 300 mm wafers
Kühnel, Kati; Riedel, Stefan; Weinreich, Wenke; Thrun, Xaver; Czernohorsky, Malte; Pätzold, Björn; Rudolph, Matthias
Presentation
2016Characterization of low temperature plasma generated oxides on germanium based substrates
Poduval, Geedhika Kallidil
: Czernohorsky, Malte (Betreuer); Lakner, Hubert (Gutachter); Fischer, Wolf-Joachim (Gutachter)
Master Thesis
2016Low-temperature microwave-based plasma oxidation of Ge and oxidation of silicon followed by plasma nitridation
Lerch, W.; Schick, T.; Sacher, N.; Kegel, W.; Niess, J.; Czernohorsky, M.; Riedel, S.
Conference Paper
2015Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides
Kahouli, A.; Lebedev, O.; Ben Elbahri, M.; Mercey, B.; Prellier, W.; Riedel, S.; Czernohorsky, M.; Lallemand, F.; Bunel, C.; Lüders, U.
Journal Article
2015Ultra-Thin high density capacitors for advanced packaging solutions
Seidel, K.; Böttcher, M.; Dobritz, S.; Czernohorsky, M.; Riedel, S.; Weinreich, W.
Conference Paper
2014First-principles study of oxygen and aluminum defects in beta-Si3N4: Compensation and charge trapping
Grillo, M.E.; Elliott, S.D.; Rodríguez, J.; Añez, R.; Coll, D.S.; Suhane, A.; Breuil, L.; Arreghini, A.; Degraeve, R.; Shariq, A.; Beyer, V.; Czernohorsky, M.
Journal Article
2012Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors
Weinreich, W.; Seidel, K.; Sundqvist, J.; Czernohorsky, M.; Kucher, P.
Conference Paper
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon
Paul, Jan; Riedel, Stefan; Rudolph, Matthias; Wege, Stephan; Czernohorsky, Malte; Sundqvist, Jonas; Hohle, Christoph; Beyer, Volkhard
Journal Article, Conference Paper
2011Influence of metal gate and capping film stress on TANOS cell performance
Czernohorsky, M.; Melde, T.; Beyer, V.; Beug, M.F.; Paul, J.; Hoffmann, R.; Knöfler, R.; Tilke, A.T.
Journal Article, Conference Paper
2011SiGe epitaxy on a 300 mm batch furnace
Naumann, A.; Sundqvist, J.; Ogiewa, M.; Boitier, L.; Czernohorsky, M.; Sienz, S.; Probst, G.; Jongbloed, B.; Beulens, S.; Maes, J.W.; Thomas, S.
Journal Article
2010Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
Beug, M. Florian; Melde, Thomas; Czernohorsky, Malte; Hoffmann, Raik; Paul, Jan; Knöfler, Roman; Tilke, Armin T.
Journal Article
2010Characterization of anomalous erase effects in 48 nm TANOS memory cells
Loehr, D.-A.; Hoffmann, R.; Naumann, A.; Paul, J.; Seidel, K.; Czernohorsky, M.; Beyer, V.
Conference Paper
2010Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory strings
Nguyen, C.D.; Kuligk, A.; Vexler, M.I.; Klawitter, M.; Beyer, V.; Melde, T.; Czernohorsky, M.; Meinerzhagen, B.
Conference Paper
2010Formation of an interface layer between Al1-xSixOy thin films and the Si substrate during rapid thermal annealing
Michalowski, Pawel Piotr; Beyer, Volkhard; Czernohorsky, Malte; Kücher, P.; Teichert, Steffen; Jaschke, Gert; Möller, Wolfhard
Journal Article, Conference Paper
2010Impact of the storage layer charging on random telegraph noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells
Seidel, K.; Hoffman, R.; Naumann, A.; Paul, J.; Löhr, D.-A.; Czernohorsky, M.; Beyer, V.
Conference Paper
2010Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas
Conference Paper, Journal Article
2009Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard
Conference Paper
2009Characterization of the diffusium process in Al2O3 thin films based on ToF-SIMS measurements
Michalowski, Pawel Piotr; Czernohorsky, Malte; Beyer, Volkhard; Jaschke, Gert; Teichert, Steffen
Abstract
2009Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability
Seidel, K.; Müller, T.; Brandt, T.; Hoffmann, R.; Löhr, D.-A.; Melde, T.; Czernohorsky, M.; Paul, J.; Beyer, V.
Conference Paper
2009Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T.
Conference Paper
2009Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas
Journal Article
2009TaN metal gate damage during high-k (Al2O3) high-temperature etch
Paul, Jan; Beyer, Volkhard; Michalowski, Pawel Piotr; Beug, M. Florian; Bach, Lars; Ackermann, Marco; Wege, S.; Tilke, Armin T.; Chan, N.; Mikolajick, Thomas; Bewersdorff-Sarlette, Ulrike; Knöfler, Roman; Czernohorsky, Malte; Ludwig, C.
Conference Paper, Journal Article
2008Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces
Lipp, E.; Eizenberg, M.; Czernohorsky, M.; Osten, H.J.
Journal Article