Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices
Beltran, A.M.; Duguay, S.; Strenger, C.; Bauer, A.J.; Cristiano, F.; Schamm-Chardon, S.
Journal Article
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Journal Article
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Journal Article
2014Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.
Journal Article, Conference Paper
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Conference Paper
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Conference Paper
2014Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.
Journal Article, Conference Paper
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Conference Paper
2013Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.
Conference Paper
2013Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Conference Paper
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Conference Paper
2012BF3 PIII modeling: Implantation, amorphisation and diffusion
Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.
Conference Paper
2012Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.
Conference Paper
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2012Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
Cristiano, F.; Essa, Z.; Qiu, Y.; Spiegel, Y.; Torregrosa, F.; Duchaine, J.; Boulenc, P.; Tavernier, C.; Cojocaru, O.; Blavette, D.; Mangelinck, D.; Fazzini, P.F.; Quillec, M.; Bazizi, M.; Hackenberg, M.; Boninelli, S.
Conference Paper
2012Nano-analytical and electrical characterization of 4H-SiC MOSFETs
Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Lefebvre, M.; Bedel-Pereira, E.; Cristiano, F.; Strenger, C.; Häublein, V.; Bauer, A.J.
Conference Paper
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Presentation
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2008Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.
Conference Paper, Journal Article
2008Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.
Journal Article
2008Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.
Journal Article
2007Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.
Conference Paper
2007Experimental and theoretical results of dopant activation by a combination of spike and flash annealing
Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.
Conference Paper
2006Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Journal Article
2005Advanced activation of ultra-shallow junctions using flash-assisted RTP
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.
Conference Paper, Journal Article
2005Combined master and FokkerPlanck equations for the modeling of the kinetics of extended defects in Si
Lampin, E.; Ortiz, C.J.; Cowern, N.E.B.; Colombeau, B.; Cristiano, F.
Journal Article
2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Conference Paper
2004Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.
Conference Paper
2004Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
Ortiza, C.J.; Cristiano, F.; Colombeau, B.; Claverie, A.; Cowern, N.E.B.
Conference Paper
2004On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Conference Paper
2004A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper