Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Journal Article, Conference Paper
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2006Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Journal Article
2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Conference Paper
2004Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
Ortiza, C.J.; Cristiano, F.; Colombeau, B.; Claverie, A.; Cowern, N.E.B.
Conference Paper
2004On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Conference Paper
2004A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Journal Article
2004Silicon Front-End Junction Formation - Physics and Technology
: Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W.
Conference Proceedings
2002Precipitation in low-temperature grown GaAs
Herms, M.; Irmer, G.; Goerigk, G.; Bedel, E.; Claverie, A.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper
1999Anomalous small angle scattering experiments on low temperature grown GaAs epilayers
Herms, M.; Goerigk, G.; Bedel, E.; Claverie, A.
Book Article
1998On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.
Conference Paper
1995Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.
Journal Article