Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1995Surface influence on the doping dependence of the E1 plus Delta1 critical points of GaAs - electric field and inpurity unscreening effect
Kuball, M.; Kelly, M.K.; Santos, P.V.; Cardona, M.; Köhler, K.; Wagner, J.
Conference Paper
1994Doping dependence of the E1 and E1 plus Delta1 critical points in highly doped n- and p-type GaAs: Importance of surface band bending and depletion
Kuball, M.; Kelly, M.K.; Cardona, M.; Köhler, K.; Wagner, J.
Journal Article
1985Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
Contreras, G.; Cardona, M.; Axmann, A.
Journal Article
1984Germanium extremely heavily doped by Ion-implantation and laser annealing - A photoluminescence study
Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J.
Conference Paper
1984Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M.
Conference Paper
1983Absorption edge of ultraheavily doped Si
Axmann, A.; Vina, L.; Umbach, C.; Cardona, M.; Compaan, A.
Journal Article
1983The E1 - E1 + Delta 1 transitions in bulk grown and in implanted laser annealed heavily doped germanium - lumninescence
Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J.
Journal Article
1983The electronic structure of heavily doped ion implanted laser annealed silicon - ellipsometric measurements
Axmann, A.; Vina, L.; Umbach, C.; Compaan, A.; Cardona, M.
Journal Article
1983Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G.
Journal Article