Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000Heizkoerperventil
Burte, E.P.
Patent
19984 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1998Auflagevorrichtung fuer ein zu beschichtendes Substrat sowie Verfahren zur vollstaendigen Beschichtung eines Substrates unter Verwendung der Vorrichtung
Burte, E.P.; Hoerner, A.
Patent
1998Chemically vapor-deposited silicon carbide films for surface protection
Hoerner, A.; Vierhaus, J.; Burte, E.P.
Journal Article
1998Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4 H-silicon carbide
Treu, M.; Burte, E.P.; Schörner, R.; Friedrichs, P.; Stephani, D.; Ryssel, H.
Journal Article
1998Vorrichtung zur Bestimmung des Fuellungsgrades einer in einer Trommelhausung rotierbar gelagerten Waschmaschinentrommel mit Waesche
Burte, E.P.
Patent
1997Characterization of oxide etching and wafer cleaning using vapor-phase anhydrous HF and ozone
Froeschle, B.; Deutschmann, L.; Bauer, A.J.; Burte, E.P.
Conference Paper
1997Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1997Micromechanical ultrasonic liquid nebulizer
Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H.
Journal Article
1997MOCVD of ferroelectric thin films
Schmidt, C.; Burte, E.P.
Conference Paper
1996Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1996High quality 4 nm gate dielectrics prepared at low pressure in oxygen oxide atmospheres
Bauer, A.J.; Burte, E.P.
Conference Paper
1996Micromechanical ultrasonic liquid nebulizer
Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H.
Conference Paper
19954 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Conference Paper
1995Low pressure chemical vapour depostition of tantalum pentoxide thin layers
Burte, E.P.; Rausch, N.
Journal Article
1995Nitrogen implanted etch-stop layers in silicon
Paneva, R.; Temmel, G.; Ryssel, H.; Burte, E.P.
Conference Paper
1995Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2
Bauer, A.J.; Burte, E.P.
Journal Article
1994Nuclear microprobe application to semiconductor process development - silicide formation and multi-layered structure
Takai, M.; Katayama, Y.; Lohner, T.; Kinomura, A.; Ryssel, H.; Tsien, P.H.; Satou, M.; Chayahara, A.; Burte, E.P.
Journal Article
1992The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J.
Journal Article
1992Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing
Dehm, C.; Kasko, I.; Burte, E.P.; Ryssel, H.
Conference Paper
1992Simulation of the step coverage for chemical vapor deposited silicon dioxide
Wille, H.; Burte, E.P.; Ryssel, H.
Journal Article
1991Cobalt disilicide formed by rapid thermal annealing and through-metal arsenic implantation
Burte, E.P.; Min, Y.
Journal Article
1991Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing
Burte, E.P.; Min, Y.; Pei-Hsin, T.; Ryssel, H.
Journal Article, Conference Paper
1991The correlation between the breakdown voltage of power devices passivated by semi-insulating polycrystalline silicon and the effective density of interface charges
Schulze, G.H.; Burte, E.P.
Journal Article
1991The dependence of reverse characteristics of high voltage devices passivated by semi-insulating polycrystalline silicon on an interfacial thin film
Schulze, G.H.; Burte, E.P.
Journal Article
1991The effect of an interfacial layer on the blocking behaviour of mesa high-voltage power devices passivated by semiinsulating polycrystalline silicon films
Schulze, G.H.; Burte, E.P.
Journal Article
1991Formation of cobalt silicide by ion beam mixing
Burte, E.P.; Min, Y.; Ryssel, H.
Journal Article, Conference Paper
1991Formation of rhodium silicide by rapid thermal annealing and by ion beam mixing
Neuner, G.; Burte, E.P.
Journal Article, Conference Paper
1991Low pressure NOCVD of tantalum oxide
Rausch, N.; Burte, E.P.
Conference Paper
1991Properties of the SIPOS-silicon interface and their impact on the reverse characteristic of power devices
Schulze, G.H.; Burte, E.P.
Conference Paper
1990Oxygen-induced generation of electronic traps at the SiO2-Si interface
Burte, E.P.
Journal Article
1989Contributions of atomic hydrogen to the low temperature removal of traps at silicon oxide-silicon interfaces.
Burte, E.P.; Matthies, P.
Journal Article
1988Time-resolved thermal annealing of interface traps in aluminium gate-silicon oxide-silicon devices
Burte, E.P.; Matthies, P.
Journal Article