Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1996Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum weels under hydrostatic pressure
Brunthaler, G.; Penn, C.; Suski, T.; Wisniewski, P.; Litwin-Staszewska, E.; Köhler, K.
Journal Article
1996Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure. Tuning of the remote-charge correlations
Wisniewski, P.; Suski, T.; Litwin-Staszewska, E.; Brunthaler, G.; Köhler, K.
Journal Article
1995Mobility enhancement due to spatial correlation of remote impurity charges in delta-doped AlGaAs/GaAs heterostructure
Suski, T.; Brunthaler, G.; Stöger, G.; Köhler, K.; Wisniewski, P.
Conference Paper
1994Influence of Coulombic broadened DX center energy levels on free electron concentration in delta-doped AlxGa1-xAs/GaAs quantum wells
Brunthaler, G.; Seto, M.; Stöger, G.; Köhler, K.
Journal Article
1994Influence of DX center structure on Si modulation delta-doping in AlGaAs/GaAs quantum wells.
Brunthaler, G.; Seto, M.; Stöger, G.; Ostermayer, G.; Köhler, K.
Journal Article
1994On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.
Stöger, G.; Brunthaler, G.; Ostermayer, G.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Journal Article
1993Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs-Si.
Brunthaler, G.; Stöger, G.; Aumayr, A.; Köhler, K.
Journal Article
1992Optically induced carrier transfer in silicon anti-modulation-doped GaAs/Al(x)Ga(1-x)As single quantum wells
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Köhler, K.
Journal Article
1991Variations of the confining potential of doped AlGaAs/GaAs Quantum Wells with the photon energy of excitation.
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Schweizer, T.; Köhler, K.
Journal Article
1990Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1-xAs-Si.
Brunthaler, G.; Köhler, K.
Journal Article
1989An A centre in CdTe
Brunthaler, G.; Jantsch, W.; Schneider, J.; Kaufmann, U.
Journal Article
1985Electron-spin-resonance analysis of the deep donors lead, tin, and germanium in CdTe
Schneider, J.; Brunthaler, G.; Jantsch, W.; Kaufmann, U.
Journal Article
1984Electron spin resonance identification of isolated Fe hoch 3+ in CdTe.
Brunthaler, G.; Schneider, J.; Kaufmann, U.
Journal Article
1984Identification of the isolated deep Ni acceptor in CdTe and ZnTe - comparison with isomorphous systems
Brunthaler, G.; Kaufmann, U.; Windscheif, J.
Journal Article