Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs
Kohlhaas, R.B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.
Journal Article
2019Ultra-fast, High-Bandwidth Coherent cw THz Spectrometer for Non-destructive Testing
Liebermeister, L.; Nellen, S.; Kohlhaas, R.; Breuer, S.; Schell, M.; Globisch, B.
Journal Article
2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices
Monachon, C.; Zielinski, M.S.; Berney, J.; Poppitz, David; Graff, Andreas; Breuer, Steffen; Kirste, Lutz
Conference Paper
2018Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire
Senichev, A.; Corfdir, P.; Brandt, O.; Ramsteiner, M.; Breuer, S.; Schilling, J.; Geelhaar, L.; Werner, P.
Journal Article
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Journal Article
2018Monolithically Integrated THz Transceiver for 1550 nm Excitation
Kohlhaas, R.B.; Nellen, S.; Liebermeister, L.; Breuer, S.; Globisch, B.
Conference Paper
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2017Failure analysis and defect inspection of electronic devices by high resolution cathodoluminescence
Monachon, C.; Zielinskl, M.S.; Gachet, D.; Sonderegger, S.; Muckenhirn, S.; Barney, J.; Poppitz, D.; Graff, A.; Breuer, S.; Kirste, L.
Conference Paper
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2015Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases
Mukherjee, A.; Ghosh, S.; Breuer, S.; Jahn, U.; Geelhaar, L.; Grahn, H.T.
Journal Article
2015Verfahren zur Herstellung einer Schicht
Köhler, Klaus; Müller, Stefan; Breuer, Steffen
Patent
2015Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Conference Paper