Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000267-W cw AlGaAs/GaInAs diode laser bars
Braunstein, J.; Mikulla, M.; Kiefer, R.; Walther, M.; Jandeleit, J.; Brandenburg, W.; Loosen, P.; Poprawe, R.; Weimann, G.
Conference Paper
2000Diode lasers now compete with solid-state systems
Mikulla, M.; Braunstein, J.
Journal Article
2000High-efficiency high-power InAlGaAs laser diodes at 980 nm
Mikulla, M.; Schmitt, A.; Bihlmann, G.; Weber, B.; Moritz, R.; Müller, S.; Braunstein, J.; Weimann, G.
Conference Paper
2000Long wavelength infrared GaAs/AlGaAs quantum well infrared photodetectors for 630x512 focal plane array camera systems with 20 mK NETD
Walther, M.; Fleißner, J.; Schneider, H.; Schönbein, C.; Pletschen, W.; Diwo, E.; Schwarz, K.; Braunstein, J.; Koidl, P.; Ziegler, J.; Cabanski, W.
Conference Paper
2000Modeling of the performance of high-brightness tapered lasers
Mariojouls, S.; Morgott, S.; Schmitt, A.; Mikulla, M.; Braunstein, J.; Weimann, G.; Lozes, F.; Bonnefont, S.
Conference Paper
2000QWIP FPAs for high-performance thermal imaging
Schneider, H.; Walther, M.; Schönbein, C.; Rehm, R.; Fleißner, J.; Pletschen, W.; Braunstein, J.; Koidl, P.; Weimann, G.; Ziegler, J.; Cabanski, W.
Journal Article
199925-W CW high-brightness tapered semiconductor laser-array
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Journal Article
1999Active probes for 2-port network analysis within 70-230 GHZ
Wohlgemuth, O.; Rodwell, M.J.W.; Reuter, R.; Braunstein, J.; Schlechtweg, M.
Conference Paper
1999Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
Daleiden, J.; Kiefer, R.; Klußmann, S.; Kunzer, M.; Manz, C.; Walther, M.; Braunstein, J.; Weimann, G.
Journal Article
1999Effect of aging on stress in silicon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition technique
Sah, R.E.; Baumann, H.; Serries, D.; Kiefer, R.; Braunstein, J.
Conference Paper
1999High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G.
Conference Paper
1999High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Moritz, R.; Müller, S.; Sah, R.E.; Braunstein, J.; Weimann, G.
Conference Paper
1999Stability of the beam quality of 0.98 mu m InGaAlAs tapered laser oscillators
Schmitt, A.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G.
Conference Paper
199820 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G.
Conference Paper
1998Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.
Journal Article
1998GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties
Pletschen, W.; Bachem, K.H.; Chertouk, M.; Bürkner, S.; Braunstein, J.
Conference Paper
1998High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
Mikulla, M.; Chazan, P.; Schmitt, A.; Morgott, S.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Journal Article
1998High-power (> 25 W cw) tapered laser bars with high brightness at 980 nm
Braunstein, J.; Mikulla, M.; Schmitt, A.; Schleife, J.; Bihlmann, G.
Conference Paper
1998High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm
Morgott, S.; Chazan, P.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G.
Journal Article
1998III-V semiconductor quantum well and superlattice detectors
Walther, M.; Fuchs, F.; Schneider, H.; Fleissner, J.; Schmitz, J.; Pletschen, W.; Braunstein, J.; Ziegler, J.; Cabanski, W.; Koidl, P.; Weinmann, G.
Conference Paper
1998Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain) epitaxial layer structures
Mikulla, M.; Schmitt, A.; Chazan, P.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Conference Paper
1998A NLTL-based integrated circuit for a 70-200 GHz VNA system
Wohlgemuth, O.; Agarwal, B.; Pullela, R.; Mensa, D.; Lee, Q.; Guthrie, J.; Rodwell, M.J.W.; Reuter, R.; Braunstein, J.; Schlechtweg, M.; Krems, T.; Köhler, K.
Conference Paper
1997Compositionally graded buffers on GaAs as substrates for Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As MODFETs
Fink, T.; Haupt, M.; Kaufel, G.; Köhler, K.; Braunstein, J.; Massler, H.
Conference Paper
1997Coplanar amplifiers up to W-band using InP-based dual-gate HEMTs
Baeyens, Y.; Zanden, K. van der; Schreurs, D.; Nauwelaers, B.; Hove, M. van; Rossum, M. van; Braunstein, J.
Conference Paper
1997Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
Chazan, P.; Morgott, S.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Moritz, R.; Daleiden, J.; Braunstein, J.; Weimann, G.
Conference Paper
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1996AlInAs/GaInAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison
Fink, T.; Haupt, M.; Köhler, K.; Raynor, B.; Braunstein, J.; Massler, H.; Tasker, P.J.
Conference Paper
1996Coplanar millimeter-wave IC's for W-band applications using 0.15 mu m pseudomorphic MODFETs
Schlechtweg, M.; Haydl, W.H.; Bangert, A.; Braunstein, J.; Tasker, P.J.; Verweyen, L.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.
Journal Article
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1995110 GHz Amplifiers Based on Compact Coplanar W-Band Receiver Technology
Schlechtweg, M.; Haydl, W.H.; Braunstein, J.; Tasker, P.J.; Bangert, A.; Reinert, W.; Verweyen, L.; Massler, H.; Seibel, J.; Züfle, K.H.; Bronner, W.; Fink, T.; Hülsmann, A.; Hofmann, P.; Kaufel, G.; Köhler, K.
Conference Paper
1995Compact high gain low 60 to 80 GHz amplifiers on GaAs
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Maßler, H.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schneider, J.
Conference Paper
1995GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications
Pereiaslavets, B.; Bachem, K.; Braunstein, J.; Eastman, L.F.
Conference Paper
1995New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz
Tasker, P.J.; Braunstein, J.
Conference Paper
1995Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
Martin, G.H.; Seaford, K.L.; Spencer, R.; Braunstein, J.; Eastman, L.F.
Conference Paper
19940.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Journal Article
1994Entwicklung von modulationsdotierten Feldeffekttransistoren für monolithisch integrierte Höchstfrequenzschaltungen
Braunstein, J.
Dissertation
1994Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography
Hülsmann, A.; Bronner, W.; Köhler, K.; Braunstein, J.; Tasker, P.J.
Journal Article
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Conference Paper
1994Gds and fT analysis of pseudomorphic MODFETs with gate lengths down to 0.1 mym
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1994Process technology for InGaAs/InAlAs modulation doped field effect transistors on InP substrates
Fink, T.; Raynor, B.; Haupt, M.; Köhler, K.; Braunstein, J.; Hornung, J.; Grün, N.
Journal Article
199328-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U.
Journal Article
1993Design data for millimeter wave coplanar circuits
Haydl, W.H.; Heinrich, W.; Bosch, R.; Schlechtweg, M.; Tasker, P.J.; Braunstein, J.
Conference Paper
1993Fabrication and performance of 1-dim MODFETs.
Hülsmann, A.; Roman, P.; Braunstein, J.; Kaufel, G.; Köhler, K.; Jakobus, T.
Journal Article
1993Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1993High gain 70-80 GHz MMIC amplifiers in coplanar waveguide technology.
Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Braunstein, J.; Haydl, W.H.; Hülsmann, A.; Köhler, K.
Journal Article
1993High gain CPW MMIC amplifiers and waveguide modules for V-band applications
Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Braunstein, J.; Haydl, W.H.; Lohrmann, W.
Conference Paper
1993High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band
Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Reinert, W.; Hülsmann, A.; Köhler, K.; Bronner, W.; Bosch, R.; Haydl, W.
Conference Paper
1993Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback.
Bosch, R.; Tasker, P.J.; Schlechtweg, M.; Braunstein, J.; Reinert, W.
Journal Article
1993MODFET technology optimization for MMICs using statistical microwave characterization
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Kaufel, G.; Schlechtweg, M.
Conference Paper
1993A novel approach for MODFET noise parameter extraction and its application in mm-wave MMICs
Tasker, P.J.; Schlechtweg, M.; Reinert, W.; Braunstein, J.
Conference Paper
1993On-wafer single contact S-parameter measurements to 75 GHz - calibration procedure and measurement system
Tasker, P.J.; Schlechtweg, M.; Braunstein, J.
Conference Paper
1993Relating mym-wave mapped data to physical parameters for MODFETs.
Braunstein, J.; Tasker, P.J.; Schlechtweg, M.; Hülsmann, A.; Kaufel, G.; Köhler, K.
Journal Article
1993Very broad band TWAs to 80 GHz on GaAs substrate
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Reinert, W.; Köhler, K.; Bronner, W.; Haydl, W.
Conference Paper
1993Very broadband distributed amplifier to 75 GHz.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Schlechtweg, M.; Köhler, K.; Bronner, W.; Haydl, W.
Journal Article
1992Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz
Haydl, W.H.; Braunstein, J.; Kitazawa, T.; Schlechtweg, M.; Tasker, P.J.; Eastman, L.F.
Conference Paper
1992Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models.
Schlechtweg, M.; Reinert, W.; Tasker, P.J.; Braunstein, J.; Hülsmann, A.; Bosch, R.; Köhler, K.
Conference Paper
1992Direct extraction of all four transistor noise parameters from a single noise figure measurement
Tasker, P.J.; Reinert, W.; Braunstein, J.; Schlechtweg, M.
Conference Paper
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Conference Paper
1992Probing the In mole fraction limits for pseudomorphic MODFETs.
Braunstein, J.; Tasker, P.J.; Reinert, W.; Schlechtweg, M.; Bosch, R.; Köhler, K.; Hülsmann, A.; Kaufel, G.
Conference Paper
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Conference Paper