Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.
Conference Paper
2013GaN doped with beryllium - An effective light converter for white light emitting diodes
Teisseyre, H.; Bockowski, M.; Grzegory, I.; Kozanecki, A.; Damilano, B.; Zhydachevskii, Y.; Kunzer, M.; Holc, K.; Schwarz, U.T.
Journal Article
2010Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes
Grzanka, S.; Perlin, P.; Czernecki, R.; Marona, L.; Bockowski, M.; Lucznik, B.; Leszczynski, M.; Khachapuridze, A.; Goss, J.; Schwarz, U.; Suski, T.
Journal Article, Conference Paper
2009Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes
Perlin, P.; Holc, K.; Sarzynski, M.; Scheibenzuber, W.; Marona, L.; Czernecki, R.; Leszczynski, M.; Bockowski, M.; Grzegory, I.; Porowski, S.; Cywinski, G.; Firek, P.; Szmidt, J.; Schwarz, U.; Suski, T.
Journal Article
2003Thick GaN layers grown by hydride vapor-phase epitaxy: Hetero- versus homo-epitaxy
Hageman, P.R.; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L.; Lucznik, B.; Bockowski, M.; Porowski, S.; Müller, S.
Journal Article