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| 2006 | Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements
Birkmann, B.; Salcianu, C.; Meissner, E.; Hussy, S.; Friedrich, J.; Müller, G. | Journal Article |
| 2006 | Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN
Birkmann, B.; Hussy, S.; Sun, G.; Berwian, P.; Meissner, E.; Friedrich, J.; Müller, G. | Journal Article |
| 2006 | Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia
Sun, G.; Meissner, E.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G. | Conference Paper, Journal Article |
| 2006 | Morphology and microstructure of a-plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG)
Hussy, S.; Meissner, E.; Birkmann, B.; Brauer, I.; Off, J.; Scholz, F.; Strunk, H.P.; Müller, G. | Journal Article |
| 2006 | Verfahren zur Erhoehung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze
Friedrich, J.; Mueller, G.; Meissner, E.; Birkmann, B.; Hussy, S. | Patent |
| 2006 | Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
Friedrich, J.; Mueller, G.; Apelt, R.; Meissner, E.; Birkmann, B.; Hussy, S. | Patent |
| 2005 | Characterisation of GaN crystals and epilayers grown from a solution at room pressure
Meissner, E.; Birkmann, B.; Hussy, S.; Sun, G.; Friedrich, J.; Müller, G. | Journal Article |
| 2005 | Investigation of residual dislocations in VGF-grown Si-doped GaAs
Birkmann, B.; Stenzenberger, J.; Jurisch, M.; Härtwig, J.; Alex, V.; Müller, G. | Journal Article |
| 2005 | Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities
Müller, G.; Schwesig, P.; Birkmann, B.; Härtwig, J.; Eichler, S. | Journal Article |
| 2004 | Growth of GaN crystals and epilayers from solutions at ambient pressure
Meissner, E.; Sun, G.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G. | Conference Paper |
| 2004 | Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
Wellmann, P.J.; Albrecht, A.; Künecke, U.; Birkmann, B.; Müller, G.; Jurisch, M. | Journal Article |
| 2002 | Analysis of silicon incorporation into VGF-grown GaAs
Birkmann, B.; Weingärtner, R.; Wellmann, P.; Wiedemann, B.; Müller, G. | Journal Article |
| 2002 | Optimization of VGF-growth of GaAs crystals by the aid of numerical modeling
Müller, G.; Birkmann, B. | Journal Article |
| 2000 | Growth of 3" and 4" gallium arsenide crystals by the vertical gradient freeze (VGF) method
Birkmann, B.; Rasp, M.; Stenzenberger, J.; Müller, G. | Journal Article |