Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Defects and carrier lifetime in 4H-Silicon Carbide
Kallinger, Birgit; Erlekampf, Jürgen; Rommel, Mathias; Berwian, Patrick; Friedrich, J.; Matthus, Christian D.
Presentation
2018Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Conference Paper
2018Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers
Kallinger, Birgit; Erlekampf, Jürgen; Roßhirt, Katharina; Berwian, Patrick; Stockmeier, Matthias; Vogel, Michael; Hens, Philip; Wischmeyer, Frank
Presentation
2018Optical stressing of 4H-SiC material and devices
Kallinger, B.; Kaminzky, D.; Berwian, P.; Friedrich, J.; Oppel, S.
Conference Paper
2018Principle of lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias
Poster
2017Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar
Poster
2017Optical stressing of 4H-SiC material and devices
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Poster
2016Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence
Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Conference Paper
2016Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Conference Paper
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Presentation
2015Imaging defect luminescence of 4H-SiC by UV-photoluminescence
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Presentation
2015Improvement of 4H-SiC material quality
Kallinger, Birgit; Kaminzky, Daniel; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen
Presentation
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2015Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2015Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN
Semmelroth, K.; Berwian, P.; Schroter, C.; Leibiger, G.; Schonleber, M.; Friedrich, J.
Journal Article
2015Quality control of SiC materials by optical detection of defects
Kallinger, Birgit; Kaminzky, Daniel; Roßhirt, Katharina; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Presentation
2015Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA
Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick
Conference Paper
2014Defektlumineszenz in 4H-SiC
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schütz, Michael
Presentation
2014HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Conference Paper
2014New Defect Luminescence Scanner for Inline Control of Material Quality
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen
Poster
2014Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Friedrich, Jochen; Rommel, Mathias
Presentation
2014Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation
Friedrich, J.; Kallinger, B.; Ehlers, C.; Berwian, P.
Presentation
2013Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.
Journal Article
2013HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2013Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Conference Paper
2013Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd
Journal Article
2013SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Conference Paper
2012Analysis of threading dislocations in 4H-SiC by defect selective etching and X-ray topography
Kallinger, Birgit; Berwian, P.; Friedrich, J.; Danilewsky, A.; Wehrhahn, A.; Weber, A.-D.
Presentation
2012Doping induced lattice misfit in 4H-SiC homoepitaxy
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Müller, Georg; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann; Thomas, Bernd
Journal Article
2012Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter
Poster
2012SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
Poster
20114H-SiC homoepitaxial growth on substrates with different off-cut directions
Kallinger, B.; Thomas, B.; Berwian, P.; Friedrich, J.; Trachta, G.; Weber, A.-D.
Conference Paper
2011Homoepitaxial growth and defect characterization of 4H-SiC epilayers
Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann
Presentation
2011Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
Kallinger, B.; Polster, S.; Berwian, P.; Friedrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, A.-D.
Journal Article
2010Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
Kallinger, B.; Thomas, B.; Polster, S.; Berwian, P.; Friedrich, J.
Conference Paper
2010Interactions of dislocations during epitaxial growth of SiC and GaN
Friedrich, J.; Kallinger, B.; Berwian, P.; Meissner, E.
Conference Paper
2010Selective etching of dislocations in GaN grown by low-pressure solution growth
Knoke, I.Y.; Berwian, P.; Meissner, E.; Friedrich, J.; Strunk, H.P.; Müller, G.
Journal Article
2008Crystal growth of compound semiconductors with low dislocation densities
Friedrich, J.; Kallinger, B.; Knoke, I.; Berwian, P.; Meissner, E.
Conference Paper
2008Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch
Hussy, S.; Meissner, E.; Berwian, P.; Friedrich, J.; Müller, G.
Journal Article
2008On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN
Hussy, S.; Berwian, P.; Meissner, E.; Friedrich, J.; Müller, G.
Journal Article
2008Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material
Kallinger, B.; Meissner, E.; Berwian, P.; Hussy, S.; Friedrich, J.; Mueller, G.
Journal Article
2007Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere
Sun, G.; Meissner, E.; Berwian, P.; Müller, G.; Friedrich, J.
Conference Paper, Journal Article
2007Verfahren zum Bearbeiten eines Substrats
Berwian, P.; Friedrich, J.
Patent
2006Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN
Birkmann, B.; Hussy, S.; Sun, G.; Berwian, P.; Meissner, E.; Friedrich, J.; Müller, G.
Journal Article
2003In situ resistivity measurements of precursor reactions in the Cu-In-Ga system
Berwian, P.; Weimar, A.; Müller, G.
Conference Paper, Journal Article