Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Conference Paper
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Conference Paper
2014Impact of scaling on the performance of HfO2-based ferroelectric field effect transistors
Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müller, S.; Slesazeck, S.; Schroeder, U.; Boschke, R.; Bentum, R. van; Mikolajick, T.
Journal Article
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
2013(Invited) Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Martin, D.; Müller, J.; Yurchuk, E.; Mueller, S.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Mueller, S.; Mueller, J.; Yurchuk, E.; Martin, D.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2000Herstellung und Charakterisierung lokaler Silizium-auf-Isolator-Substrate
Bentum, R. van
Dissertation
2000Smart power integration on SOI: thin and thick film (local) SOI processes and devices
Paschen, U.; Weyers, J.; Bentum, R. van; Steck, B.; Vogt, F.P.; Vogt, H.
Conference Paper